SG10201805871TA - Polishing compositions containing charged abrasive - Google Patents
Polishing compositions containing charged abrasiveInfo
- Publication number
- SG10201805871TA SG10201805871TA SG10201805871TA SG10201805871TA SG10201805871TA SG 10201805871T A SG10201805871T A SG 10201805871TA SG 10201805871T A SG10201805871T A SG 10201805871TA SG 10201805871T A SG10201805871T A SG 10201805871TA SG 10201805871T A SG10201805871T A SG 10201805871TA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing compositions
- compositions containing
- charge
- containing charged
- polishing
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 6
- 239000000203 mixture Substances 0.000 title abstract 5
- 239000003082 abrasive agent Substances 0.000 abstract 2
- 125000000129 anionic group Chemical group 0.000 abstract 1
- 125000002091 cationic group Chemical group 0.000 abstract 1
- 230000009881 electrostatic interaction Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dispersion Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Disintegrating Or Milling (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/725,855 US10428241B2 (en) | 2017-10-05 | 2017-10-05 | Polishing compositions containing charged abrasive |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201805871TA true SG10201805871TA (en) | 2019-05-30 |
Family
ID=63592534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201805871TA SG10201805871TA (en) | 2017-10-05 | 2018-07-09 | Polishing compositions containing charged abrasive |
Country Status (8)
| Country | Link |
|---|---|
| US (5) | US10428241B2 (ko) |
| EP (1) | EP3476909B1 (ko) |
| JP (2) | JP7074635B2 (ko) |
| KR (2) | KR102491600B1 (ko) |
| CN (1) | CN109609035B (ko) |
| SG (1) | SG10201805871TA (ko) |
| TW (1) | TWI812611B (ko) |
| WO (1) | WO2019070470A1 (ko) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10428241B2 (en) * | 2017-10-05 | 2019-10-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions containing charged abrasive |
| CN111356747A (zh) * | 2017-11-22 | 2020-06-30 | 巴斯夫欧洲公司 | 化学机械抛光组合物 |
| KR20200061186A (ko) * | 2018-11-23 | 2020-06-02 | 솔브레인 주식회사 | 연마용 조성물 및 이를 이용하는 연마 방법 |
| US10988635B2 (en) * | 2018-12-04 | 2021-04-27 | Cmc Materials, Inc. | Composition and method for copper barrier CMP |
| KR102279324B1 (ko) * | 2018-12-21 | 2021-07-21 | 주식회사 케이씨텍 | 연마 슬러리 조성물 |
| WO2021005980A1 (ja) * | 2019-07-05 | 2021-01-14 | 富士フイルム株式会社 | 組成物、キット、基板の処理方法 |
| JP7493367B2 (ja) | 2020-03-27 | 2024-05-31 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
| CN114686115A (zh) * | 2020-12-30 | 2022-07-01 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液及其使用方法 |
| JP2024508243A (ja) * | 2021-02-04 | 2024-02-26 | シーエムシー マテリアルズ リミティド ライアビリティ カンパニー | 炭窒化ケイ素研磨組成物及び方法 |
| CN117321169A (zh) * | 2021-06-08 | 2023-12-29 | 株式会社东进世美肯 | 有机膜研磨组合物以及利用其的研磨方法 |
| WO2023076114A1 (en) * | 2021-10-28 | 2023-05-04 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of use thereof |
| CN116368263A (zh) * | 2021-10-28 | 2023-06-30 | 富士胶片电子材料美国有限公司 | 抛光组合物及其使用方法 |
| WO2023171290A1 (ja) * | 2022-03-08 | 2023-09-14 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| CN117637460A (zh) * | 2022-08-10 | 2024-03-01 | 长鑫存储技术有限公司 | 一种半导体结构及其制备方法 |
| US20240150614A1 (en) * | 2022-11-09 | 2024-05-09 | Entegris, Inc. | Positively charged abrasive with negatively charged ionic oxidizer for polishing application |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6776810B1 (en) | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| JP4577755B2 (ja) | 2003-12-02 | 2010-11-10 | 扶桑化学工業株式会社 | 変性コロイダルシリカの製造方法 |
| US7531105B2 (en) | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| US7504044B2 (en) | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| US8196697B2 (en) * | 2004-11-10 | 2012-06-12 | Yoram Fruehling Driving Systems, Ltd. | Driving accessory for handicapped drivers |
| US20100001229A1 (en) | 2007-02-27 | 2010-01-07 | Hitachi Chemical Co., Ltd. | Cmp slurry for silicon film |
| US20090008187A1 (en) * | 2007-07-02 | 2009-01-08 | Garelick Richard J | Attachment and storage system for an extendible ladder |
| KR101396853B1 (ko) | 2007-07-06 | 2014-05-20 | 삼성전자주식회사 | 실리콘 질화물 연마용 슬러리 조성물, 이를 이용한 실리콘질화막의 연마 방법 및 반도체 장치의 제조 방법 |
| KR101232585B1 (ko) * | 2007-09-21 | 2013-02-12 | 캐보트 마이크로일렉트로닉스 코포레이션 | 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법 |
| KR101232442B1 (ko) * | 2007-09-21 | 2013-02-12 | 캐보트 마이크로일렉트로닉스 코포레이션 | 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법 |
| WO2009056491A1 (en) | 2007-10-29 | 2009-05-07 | Basf Se | Cmp slurry composition and process for planarizing copper containing surfaces provided with a diffusion barrier layer |
| JP2009206148A (ja) * | 2008-02-26 | 2009-09-10 | Fujimi Inc | 研磨用組成物 |
| JP2010269985A (ja) | 2009-05-22 | 2010-12-02 | Fuso Chemical Co Ltd | スルホン酸修飾水性アニオンシリカゾル及びその製造方法 |
| US8197782B2 (en) * | 2010-02-08 | 2012-06-12 | Momentive Performance Materials | Method for making high purity metal oxide particles and materials made thereof |
| JP2011216582A (ja) * | 2010-03-31 | 2011-10-27 | Fujifilm Corp | 研磨方法、および研磨液 |
| US8961815B2 (en) * | 2010-07-01 | 2015-02-24 | Planar Solutions, Llc | Composition for advanced node front-and back-end of line chemical mechanical polishing |
| JP5695367B2 (ja) | 2010-08-23 | 2015-04-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| US20130200038A1 (en) | 2010-09-08 | 2013-08-08 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices |
| US8808573B2 (en) | 2011-04-15 | 2014-08-19 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| US9318412B2 (en) * | 2013-07-26 | 2016-04-19 | Nanya Technology Corporation | Method for semiconductor self-aligned patterning |
| US9284472B2 (en) | 2013-08-09 | 2016-03-15 | Fujimi Incorporated | SiCN and SiN polishing slurries and polishing methods using the same |
| SG11201601847WA (en) | 2013-09-20 | 2016-04-28 | Fujimi Inc | Polishing composition |
| US10106704B2 (en) | 2014-03-20 | 2018-10-23 | Fujimi Incorporated | Polishing composition, polishing method, and method for producing substrate |
| US9583359B2 (en) | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
| WO2015200678A1 (en) | 2014-06-25 | 2015-12-30 | Cabot Microelectronics Corporation | Colloidal silica chemical-mechanical polishing concentrate |
| US9735030B2 (en) | 2014-09-05 | 2017-08-15 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for polishing cobalt films |
| JP2017197590A (ja) | 2014-09-08 | 2017-11-02 | ニッタ・ハース株式会社 | 研磨用組成物 |
| US20170342304A1 (en) * | 2015-01-19 | 2017-11-30 | Fujimi Incorporated | Polishing composition |
| JP6649279B2 (ja) * | 2015-01-19 | 2020-02-19 | 株式会社フジミインコーポレーテッド | 変性コロイダルシリカおよびその製造方法、並びにこれを用いた研磨剤 |
| US9803109B2 (en) * | 2015-02-03 | 2017-10-31 | Cabot Microelectronics Corporation | CMP composition for silicon nitride removal |
| US10301508B2 (en) | 2016-01-25 | 2019-05-28 | Cabot Microelectronics Corporation | Polishing composition comprising cationic polymer additive |
| US10428241B2 (en) | 2017-10-05 | 2019-10-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions containing charged abrasive |
-
2017
- 2017-10-05 US US15/725,855 patent/US10428241B2/en active Active
-
2018
- 2018-03-08 TW TW107107919A patent/TWI812611B/zh active
- 2018-04-13 CN CN201810329068.2A patent/CN109609035B/zh active Active
- 2018-05-04 KR KR1020180051632A patent/KR102491600B1/ko active IP Right Grant
- 2018-07-09 SG SG10201805871TA patent/SG10201805871TA/en unknown
- 2018-07-27 EP EP18185990.1A patent/EP3476909B1/en active Active
- 2018-09-26 WO PCT/US2018/052804 patent/WO2019070470A1/en active Application Filing
- 2018-10-03 JP JP2018188440A patent/JP7074635B2/ja active Active
-
2019
- 2019-08-08 US US16/535,384 patent/US10808145B2/en active Active
- 2019-08-08 US US16/535,360 patent/US11034861B2/en active Active
-
2021
- 2021-05-27 US US17/332,173 patent/US20210348029A1/en not_active Abandoned
-
2022
- 2022-02-16 US US17/673,009 patent/US11674056B2/en active Active
- 2022-05-12 JP JP2022079100A patent/JP2022106995A/ja active Pending
-
2023
- 2023-01-18 KR KR1020230007271A patent/KR20230017331A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| KR102491600B1 (ko) | 2023-01-20 |
| KR20230017331A (ko) | 2023-02-03 |
| JP2019071413A (ja) | 2019-05-09 |
| WO2019070470A1 (en) | 2019-04-11 |
| EP3476909A2 (en) | 2019-05-01 |
| US20190359857A1 (en) | 2019-11-28 |
| CN109609035B (zh) | 2022-11-29 |
| US20190106596A1 (en) | 2019-04-11 |
| US10428241B2 (en) | 2019-10-01 |
| TW201915120A (zh) | 2019-04-16 |
| US20190359858A1 (en) | 2019-11-28 |
| US11674056B2 (en) | 2023-06-13 |
| JP7074635B2 (ja) | 2022-05-24 |
| US20210348029A1 (en) | 2021-11-11 |
| EP3476909A3 (en) | 2019-08-21 |
| CN109609035A (zh) | 2019-04-12 |
| US11034861B2 (en) | 2021-06-15 |
| TWI812611B (zh) | 2023-08-21 |
| EP3476909B1 (en) | 2023-03-22 |
| US20220169892A1 (en) | 2022-06-02 |
| US10808145B2 (en) | 2020-10-20 |
| JP2022106995A (ja) | 2022-07-20 |
| KR20190039635A (ko) | 2019-04-15 |
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