SG10201709023TA - Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereof - Google Patents
Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereofInfo
- Publication number
- SG10201709023TA SG10201709023TA SG10201709023TA SG10201709023TA SG10201709023TA SG 10201709023T A SG10201709023T A SG 10201709023TA SG 10201709023T A SG10201709023T A SG 10201709023TA SG 10201709023T A SG10201709023T A SG 10201709023TA SG 10201709023T A SG10201709023T A SG 10201709023TA
- Authority
- SG
- Singapore
- Prior art keywords
- cobalt
- compounds
- making
- disubstituted alkyne
- dicobalt hexacarbonyl
- Prior art date
Links
- 150000001345 alkine derivatives Chemical class 0.000 title abstract 4
- 150000001875 compounds Chemical class 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910017052 cobalt Inorganic materials 0.000 abstract 6
- 239000010941 cobalt Substances 0.000 abstract 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 4
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 125000000217 alkyl group Chemical group 0.000 abstract 3
- 150000001869 cobalt compounds Chemical class 0.000 abstract 3
- 238000000151 deposition Methods 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 2
- 239000002243 precursor Substances 0.000 abstract 2
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- 150000001868 cobalt Chemical class 0.000 abstract 1
- -1 cobalt nitride Chemical class 0.000 abstract 1
- 229910000428 cobalt oxide Inorganic materials 0.000 abstract 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 abstract 1
- 239000003446 ligand Substances 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/406—Oxides of iron group metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Ceramic Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662415822P | 2016-11-01 | 2016-11-01 | |
| US15/790,931 US20180134738A1 (en) | 2016-11-01 | 2017-10-23 | Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201709023TA true SG10201709023TA (en) | 2018-06-28 |
Family
ID=60201900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201709023TA SG10201709023TA (en) | 2016-11-01 | 2017-11-01 | Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereof |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20180134738A1 (ja) |
| EP (1) | EP3315506A1 (ja) |
| JP (1) | JP6730243B2 (ja) |
| KR (1) | KR102110739B1 (ja) |
| CN (1) | CN108017679A (ja) |
| IL (1) | IL255267A0 (ja) |
| SG (1) | SG10201709023TA (ja) |
| TW (1) | TW201823263A (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180134738A1 (en) * | 2016-11-01 | 2018-05-17 | Versum Materials Us, Llc | Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereof |
| JP7090460B2 (ja) | 2018-04-18 | 2022-06-24 | キヤノン株式会社 | 生体情報の測定装置及びプログラム |
| US10961624B2 (en) * | 2019-04-02 | 2021-03-30 | Gelest Technologies, Inc. | Process for pulsed thin film deposition |
| KR20230013482A (ko) | 2021-07-19 | 2023-01-26 | 코스맥스네오 주식회사 | 다회 사용할 수 있는 휴대용 화장품 용기 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100459609B1 (ko) * | 2002-10-14 | 2004-12-03 | 주식회사 메카로닉스 | 코발트 및 코발트실리사이드 박막 증착을 위한유기코발트화합물과 그 제조방법 및 박막 제조방법 |
| KR20050121506A (ko) * | 2004-06-22 | 2005-12-27 | 주식회사 메카로닉스 | 코발트를 포함하는 박막 증착을 위한 유기코발트화합물과용액 조성 및 박막 제조방법 |
| JP2011063850A (ja) * | 2009-09-17 | 2011-03-31 | Tokyo Electron Ltd | 成膜装置、成膜方法および記憶媒体 |
| JP5795520B2 (ja) * | 2011-11-14 | 2015-10-14 | 大陽日酸株式会社 | 金属薄膜材料および金属薄膜の成膜方法 |
| US10309010B2 (en) * | 2013-01-31 | 2019-06-04 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Cobalt-containing compounds, their synthesis, and use in cobalt-containing film deposition |
| US9385033B2 (en) * | 2013-09-27 | 2016-07-05 | Intel Corporation | Method of forming a metal from a cobalt metal precursor |
| US9579421B2 (en) * | 2014-02-07 | 2017-02-28 | Globus Medical Inc. | Bone grafts and methods of making and using bone grafts |
| US11761086B2 (en) * | 2014-02-23 | 2023-09-19 | Entegris, Inc. | Cobalt precursors |
| JP2015224227A (ja) * | 2014-05-28 | 2015-12-14 | 宇部興産株式会社 | （アセチレン）ジコバルトヘキサカルボニル化合物の製造方法 |
| JP6460847B2 (ja) * | 2015-03-09 | 2019-01-30 | 田中貴金属工業株式会社 | 有機ニッケル化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
| US9719167B2 (en) * | 2015-12-31 | 2017-08-01 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Cobalt-containing film forming compositions, their synthesis, and use in film deposition |
| US20180134738A1 (en) * | 2016-11-01 | 2018-05-17 | Versum Materials Us, Llc | Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereof |
| US20180135174A1 (en) * | 2016-11-01 | 2018-05-17 | Versum Materials Us, Llc | Cobalt compounds, method of making and method of use thereof |
-
2017
- 2017-10-23 US US15/790,931 patent/US20180134738A1/en not_active Abandoned
- 2017-10-26 IL IL255267A patent/IL255267A0/en unknown
- 2017-10-30 TW TW106137456A patent/TW201823263A/zh unknown
- 2017-10-31 CN CN201711050452.0A patent/CN108017679A/zh active Pending
- 2017-10-31 KR KR1020170144180A patent/KR102110739B1/ko active IP Right Grant
- 2017-11-01 EP EP17199559.0A patent/EP3315506A1/en not_active Withdrawn
- 2017-11-01 SG SG10201709023TA patent/SG10201709023TA/en unknown
- 2017-11-01 JP JP2017211550A patent/JP6730243B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN108017679A (zh) | 2018-05-11 |
| KR102110739B1 (ko) | 2020-05-14 |
| TW201823263A (zh) | 2018-07-01 |
| JP2018080162A (ja) | 2018-05-24 |
| US20180134738A1 (en) | 2018-05-17 |
| JP6730243B2 (ja) | 2020-07-29 |
| KR20180048406A (ko) | 2018-05-10 |
| IL255267A0 (en) | 2017-12-31 |
| EP3315506A1 (en) | 2018-05-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG10201709023TA (en) | Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereof | |
| EP3095788A3 (en) | Organoaminosilane precursors and methods for depositing films comprising same | |
| ATE542792T1 (de) | Quellen asymmetrischer ligangen, metallhaltige verbindungen mit reduzierter symmetrie und system und verfahren, bei denen diese eingesetzt werden | |
| Tanskanen et al. | Iron-terephthalate coordination network thin films through in-situ atomic/molecular layer deposition | |
| SG139702A1 (en) | Organometallic compounds | |
| MX2018000314A (es) | Procesamiento de capa de material de perovskita. | |
| WO2015091781A3 (en) | Method of producing transition metal dichalcogenide layer | |
| TW200606168A (en) | Copper (I) compounds useful as deposition precursors of copper thin films | |
| SG10201804678TA (en) | Halogen free syntheses of aminosilanes by catalytic dehydrogenative coupling | |
| TW201612351A (en) | Cleaning of carbon-based contaminants in metal interconnects for interconnect capping applications | |
| JP6645881B2 (ja) | 銅めっき液及び銅めっき方法 | |
| SG139703A1 (en) | Organometallic compounds | |
| TW200722539A (en) | Atomic layer deposition of tantalum-containing films using surface-activating agents and novel tantalum complexes | |
| WO2007147020A3 (en) | Cobalt precursors useful for forming cobalt-containing films on substrates | |
| Park et al. | Atomic layer deposition of copper nitride film and its application to copper seed layer for electrodeposition | |
| SG149764A1 (en) | Precursor compositions and methods | |
| MY183912A (en) | Catalytic articles containing platinum group metals and nonplatinum group metals and methods of making and using same | |
| WO2018122603A3 (en) | PRECURSORS OF ZIRCONIUM, HAFNIUM, TITANIUM AND DEPOSITION OF FILMS CONTAINING A GROUP 4 USING THE SAME | |
| RU2016134923A (ru) | Способ образования тонких неорганических пленок | |
| WO2009059237A3 (en) | Novel bismuth precursors for cvd/ald of thin films | |
| WO2014172131A3 (en) | Methods of forming perovskite films | |
| WO2013098794A3 (en) | Nickel allyl amidinate precursors for deposition of nickel-containing films | |
| TW200745140A (en) | Copper (I) amidinates and guanidinates, mixed ligand copper complexes, and compositions for chemical vapor deposition, atomic layer deposition, and rapid vapor deposition of copper | |
| MY181601A (en) | Plating bath composition and method for electroless plating of palladium | |
| WO2012125439A3 (en) | Precursors and methods for the atomic layer deposition of manganese |