SG10201702164XA - Wet-dry integrated wafer processing system - Google Patents

Wet-dry integrated wafer processing system

Info

Publication number
SG10201702164XA
SG10201702164XA SG10201702164XA SG10201702164XA SG10201702164XA SG 10201702164X A SG10201702164X A SG 10201702164XA SG 10201702164X A SG10201702164X A SG 10201702164XA SG 10201702164X A SG10201702164X A SG 10201702164XA SG 10201702164X A SG10201702164X A SG 10201702164XA
Authority
SG
Singapore
Prior art keywords
wet
processing system
wafer processing
integrated wafer
dry integrated
Prior art date
Application number
SG10201702164XA
Other languages
English (en)
Inventor
Lill Thorsten
Fischer Andreas
h gould Richard
Myslovaty Michael
Engesser Philipp
Okorn-Schmidt Harald
joel bjork Anders
Original Assignee
Lam Res Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Ag filed Critical Lam Res Ag
Publication of SG10201702164XA publication Critical patent/SG10201702164XA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
SG10201702164XA 2016-03-17 2017-03-16 Wet-dry integrated wafer processing system SG10201702164XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15/073,368 US10249521B2 (en) 2016-03-17 2016-03-17 Wet-dry integrated wafer processing system

Publications (1)

Publication Number Publication Date
SG10201702164XA true SG10201702164XA (en) 2017-10-30

Family

ID=59847150

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201702164XA SG10201702164XA (en) 2016-03-17 2017-03-16 Wet-dry integrated wafer processing system

Country Status (6)

Country Link
US (1) US10249521B2 (https=)
JP (1) JP6990030B2 (https=)
KR (1) KR102392271B1 (https=)
CN (1) CN107204304B (https=)
SG (1) SG10201702164XA (https=)
TW (1) TWI725132B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7158133B2 (ja) * 2017-03-03 2022-10-21 アプライド マテリアルズ インコーポレイテッド 雰囲気が制御された移送モジュール及び処理システム
JP7166089B2 (ja) * 2018-06-29 2022-11-07 東京エレクトロン株式会社 基板処理装置、基板処理システムおよび基板処理方法
CN110544660B (zh) * 2018-08-02 2022-08-16 北京北方华创微电子装备有限公司 模块化晶圆传输系统和半导体设备
TWI901580B (zh) * 2019-03-15 2025-10-21 美商蘭姆研究公司 用於蝕刻反應器的渦輪分子泵及陰極組件
JP7578429B2 (ja) * 2020-07-15 2024-11-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN116705677A (zh) * 2022-02-28 2023-09-05 铠侠股份有限公司 衬底处理装置及半导体装置的制造方法
CN115881590A (zh) * 2022-11-30 2023-03-31 中国科学院微电子研究所 集成电路设备和半导体器件的制备方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6244811B1 (en) 1999-06-29 2001-06-12 Lam Research Corporation Atmospheric wafer transfer module with nest for wafer transport robot
US6750155B2 (en) 2001-08-08 2004-06-15 Lam Research Corporation Methods to minimize moisture condensation over a substrate in a rapid cycle chamber
JP3869306B2 (ja) * 2001-08-28 2007-01-17 東京エレクトロン株式会社 現像処理方法および現像液塗布装置
US20030045098A1 (en) 2001-08-31 2003-03-06 Applied Materials, Inc. Method and apparatus for processing a wafer
US6823876B1 (en) * 2003-09-02 2004-11-30 Macronix International Co., Ltd. Methodology of rotational etching tool maintenance
US9117860B2 (en) 2006-08-30 2015-08-25 Lam Research Corporation Controlled ambient system for interface engineering
US7432177B2 (en) 2005-06-15 2008-10-07 Applied Materials, Inc. Post-ion implant cleaning for silicon on insulator substrate preparation
JP4916140B2 (ja) 2005-07-26 2012-04-11 東京エレクトロン株式会社 真空処理システム
US8771804B2 (en) 2005-08-31 2014-07-08 Lam Research Corporation Processes and systems for engineering a copper surface for selective metal deposition
US8747960B2 (en) 2005-08-31 2014-06-10 Lam Research Corporation Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide
US8794896B2 (en) * 2005-12-14 2014-08-05 Tokyo Electron Limited Vacuum processing apparatus and zonal airflow generating unit
CN101529556B (zh) 2006-08-30 2012-05-30 朗姆研究公司 用于处理衬底的组合体系结构
KR100912701B1 (ko) * 2007-10-22 2009-08-19 세메스 주식회사 웨이퍼 스핀 척과 스핀 척을 구비한 에칭 장치
WO2009065757A1 (en) * 2007-11-23 2009-05-28 Sez Ag Device and process for wet treating a peripheral area of a wafer-shaped article
US8185242B2 (en) 2008-05-07 2012-05-22 Lam Research Corporation Dynamic alignment of wafers using compensation values obtained through a series of wafer movements
TWI417984B (zh) * 2009-12-10 2013-12-01 沃博提克Ｌｔ太陽公司 自動排序之多方向性直線型處理裝置
WO2012148568A1 (en) * 2011-03-01 2012-11-01 Applied Materials, Inc. Method and apparatus for substrate transfer and radical confinement
US10269615B2 (en) * 2011-09-09 2019-04-23 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
US9666414B2 (en) * 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
US20140271097A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging

Also Published As

Publication number Publication date
US20170271180A1 (en) 2017-09-21
TWI725132B (zh) 2021-04-21
TW201801223A (zh) 2018-01-01
KR102392271B1 (ko) 2022-04-28
CN107204304A (zh) 2017-09-26
US10249521B2 (en) 2019-04-02
CN107204304B (zh) 2020-12-15
JP6990030B2 (ja) 2022-01-12
KR20170108871A (ko) 2017-09-27
JP2017183712A (ja) 2017-10-05

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