CN107204304B - 干法-湿法集成晶片处理系统 - Google Patents

干法-湿法集成晶片处理系统 Download PDF

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Publication number
CN107204304B
CN107204304B CN201710153000.9A CN201710153000A CN107204304B CN 107204304 B CN107204304 B CN 107204304B CN 201710153000 A CN201710153000 A CN 201710153000A CN 107204304 B CN107204304 B CN 107204304B
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module
atmospheric
gas
wafer
airlock
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Chinese (zh)
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CN107204304A (zh
Inventor
索斯藤·利尔
安德列亚斯·费希尔
理查德·H·古尔德
迈克尔·米斯洛沃伊
菲利普·恩格赛
哈拉尔德·奥科伦-施密特
安德斯·乔尔·比约克
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Robotics (AREA)
CN201710153000.9A 2016-03-17 2017-03-15 干法-湿法集成晶片处理系统 Active CN107204304B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/073,368 US10249521B2 (en) 2016-03-17 2016-03-17 Wet-dry integrated wafer processing system
US15/073,368 2016-03-17

Publications (2)

Publication Number Publication Date
CN107204304A CN107204304A (zh) 2017-09-26
CN107204304B true CN107204304B (zh) 2020-12-15

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CN201710153000.9A Active CN107204304B (zh) 2016-03-17 2017-03-15 干法-湿法集成晶片处理系统

Country Status (6)

Country Link
US (1) US10249521B2 (https=)
JP (1) JP6990030B2 (https=)
KR (1) KR102392271B1 (https=)
CN (1) CN107204304B (https=)
SG (1) SG10201702164XA (https=)
TW (1) TWI725132B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7158133B2 (ja) * 2017-03-03 2022-10-21 アプライド マテリアルズ インコーポレイテッド 雰囲気が制御された移送モジュール及び処理システム
JP7166089B2 (ja) * 2018-06-29 2022-11-07 東京エレクトロン株式会社 基板処理装置、基板処理システムおよび基板処理方法
CN110544660B (zh) * 2018-08-02 2022-08-16 北京北方华创微电子装备有限公司 模块化晶圆传输系统和半导体设备
TWI901580B (zh) * 2019-03-15 2025-10-21 美商蘭姆研究公司 用於蝕刻反應器的渦輪分子泵及陰極組件
JP7578429B2 (ja) * 2020-07-15 2024-11-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN116705677A (zh) * 2022-02-28 2023-09-05 铠侠股份有限公司 衬底处理装置及半导体装置的制造方法
CN115881590A (zh) * 2022-11-30 2023-03-31 中国科学院微电子研究所 集成电路设备和半导体器件的制备方法

Citations (5)

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US6811962B2 (en) * 2001-08-28 2004-11-02 Tokyo Electron Limited Method for developing processing and apparatus for supplying developing solution
US7159599B2 (en) * 2001-08-31 2007-01-09 Applied Materials, Inc. Method and apparatus for processing a wafer
WO2009065757A1 (en) * 2007-11-23 2009-05-28 Sez Ag Device and process for wet treating a peripheral area of a wafer-shaped article
US8771804B2 (en) * 2005-08-31 2014-07-08 Lam Research Corporation Processes and systems for engineering a copper surface for selective metal deposition
CN104160496A (zh) * 2011-09-09 2014-11-19 朗姆研究公司 用于处理晶片状物品的表面的装置

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US6244811B1 (en) 1999-06-29 2001-06-12 Lam Research Corporation Atmospheric wafer transfer module with nest for wafer transport robot
US6750155B2 (en) 2001-08-08 2004-06-15 Lam Research Corporation Methods to minimize moisture condensation over a substrate in a rapid cycle chamber
US6823876B1 (en) * 2003-09-02 2004-11-30 Macronix International Co., Ltd. Methodology of rotational etching tool maintenance
US9117860B2 (en) 2006-08-30 2015-08-25 Lam Research Corporation Controlled ambient system for interface engineering
US7432177B2 (en) 2005-06-15 2008-10-07 Applied Materials, Inc. Post-ion implant cleaning for silicon on insulator substrate preparation
JP4916140B2 (ja) 2005-07-26 2012-04-11 東京エレクトロン株式会社 真空処理システム
US8747960B2 (en) 2005-08-31 2014-06-10 Lam Research Corporation Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide
US8794896B2 (en) * 2005-12-14 2014-08-05 Tokyo Electron Limited Vacuum processing apparatus and zonal airflow generating unit
CN101529556B (zh) 2006-08-30 2012-05-30 朗姆研究公司 用于处理衬底的组合体系结构
KR100912701B1 (ko) * 2007-10-22 2009-08-19 세메스 주식회사 웨이퍼 스핀 척과 스핀 척을 구비한 에칭 장치
US8185242B2 (en) 2008-05-07 2012-05-22 Lam Research Corporation Dynamic alignment of wafers using compensation values obtained through a series of wafer movements
TWI417984B (zh) * 2009-12-10 2013-12-01 沃博提克Ｌｔ太陽公司 自動排序之多方向性直線型處理裝置
WO2012148568A1 (en) * 2011-03-01 2012-11-01 Applied Materials, Inc. Method and apparatus for substrate transfer and radical confinement
US9666414B2 (en) * 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
US20140271097A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
US6811962B2 (en) * 2001-08-28 2004-11-02 Tokyo Electron Limited Method for developing processing and apparatus for supplying developing solution
US7159599B2 (en) * 2001-08-31 2007-01-09 Applied Materials, Inc. Method and apparatus for processing a wafer
US8771804B2 (en) * 2005-08-31 2014-07-08 Lam Research Corporation Processes and systems for engineering a copper surface for selective metal deposition
WO2009065757A1 (en) * 2007-11-23 2009-05-28 Sez Ag Device and process for wet treating a peripheral area of a wafer-shaped article
CN104160496A (zh) * 2011-09-09 2014-11-19 朗姆研究公司 用于处理晶片状物品的表面的装置

Also Published As

Publication number Publication date
US20170271180A1 (en) 2017-09-21
TWI725132B (zh) 2021-04-21
SG10201702164XA (en) 2017-10-30
TW201801223A (zh) 2018-01-01
KR102392271B1 (ko) 2022-04-28
CN107204304A (zh) 2017-09-26
US10249521B2 (en) 2019-04-02
JP6990030B2 (ja) 2022-01-12
KR20170108871A (ko) 2017-09-27
JP2017183712A (ja) 2017-10-05

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