SG10201604261TA - Power switching system for esc with array of thermal control elements - Google Patents
Power switching system for esc with array of thermal control elementsInfo
- Publication number
- SG10201604261TA SG10201604261TA SG10201604261TA SG10201604261TA SG10201604261TA SG 10201604261T A SG10201604261T A SG 10201604261TA SG 10201604261T A SG10201604261T A SG 10201604261TA SG 10201604261T A SG10201604261T A SG 10201604261TA SG 10201604261T A SG10201604261T A SG 10201604261TA
- Authority
- SG
- Singapore
- Prior art keywords
- esc
- array
- control elements
- switching system
- power switching
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Plasma & Fusion (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/690,745 US10049948B2 (en) | 2012-11-30 | 2012-11-30 | Power switching system for ESC with array of thermal control elements |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201604261TA true SG10201604261TA (en) | 2016-07-28 |
Family
ID=50825824
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201604261TA SG10201604261TA (en) | 2012-11-30 | 2013-11-07 | Power switching system for esc with array of thermal control elements |
SG2013083647A SG2013083647A (en) | 2012-11-30 | 2013-11-07 | Power switching system for esc with array of thermal control elements |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2013083647A SG2013083647A (en) | 2012-11-30 | 2013-11-07 | Power switching system for esc with array of thermal control elements |
Country Status (6)
Country | Link |
---|---|
US (2) | US10049948B2 (en) |
JP (1) | JP6276005B2 (en) |
KR (2) | KR102208488B1 (en) |
CN (1) | CN103854947B (en) |
SG (2) | SG10201604261TA (en) |
TW (1) | TWI619163B (en) |
Families Citing this family (117)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5973731B2 (en) * | 2012-01-13 | 2016-08-23 | 東京エレクトロン株式会社 | Plasma processing apparatus and heater temperature control method |
WO2014164910A1 (en) | 2013-03-12 | 2014-10-09 | Applied Materials, Inc. | Multi zone heating and cooling esc for plasma process chamber |
WO2014164449A1 (en) | 2013-03-13 | 2014-10-09 | Applied Materials, Inc. | Multi-zone heated esc with independent edge zones |
TW201518538A (en) | 2013-11-11 | 2015-05-16 | Applied Materials Inc | Pixelated cooling, temperature controlled substrate support assembly |
US10460968B2 (en) | 2013-12-02 | 2019-10-29 | Applied Materials, Inc. | Electrostatic chuck with variable pixelated magnetic field |
US10217615B2 (en) | 2013-12-16 | 2019-02-26 | Lam Research Corporation | Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof |
US9520315B2 (en) | 2013-12-31 | 2016-12-13 | Applied Materials, Inc. | Electrostatic chuck with internal flow adjustments for improved temperature distribution |
US9622375B2 (en) | 2013-12-31 | 2017-04-11 | Applied Materials, Inc. | Electrostatic chuck with external flow adjustments for improved temperature distribution |
US11158526B2 (en) | 2014-02-07 | 2021-10-26 | Applied Materials, Inc. | Temperature controlled substrate support assembly |
US9472410B2 (en) | 2014-03-05 | 2016-10-18 | Applied Materials, Inc. | Pixelated capacitance controlled ESC |
JP6219227B2 (en) * | 2014-05-12 | 2017-10-25 | 東京エレクトロン株式会社 | Heater feeding mechanism and stage temperature control method |
JP6219229B2 (en) * | 2014-05-19 | 2017-10-25 | 東京エレクトロン株式会社 | Heater feeding mechanism |
US9543171B2 (en) * | 2014-06-17 | 2017-01-10 | Lam Research Corporation | Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element |
KR20190010748A (en) | 2014-06-23 | 2019-01-30 | 니혼도꾸슈도교 가부시키가이샤 | Electrostatic chuck |
CN106471609B (en) | 2014-07-02 | 2019-10-15 | 应用材料公司 | For using the apparatus, system and method for the substrate temperature control of insertion optical fiber optical device and epoxy resin optical diffuser |
WO2016014138A1 (en) * | 2014-07-23 | 2016-01-28 | Applied Materials, Inc. | Tunable temperature controlled substrate support assembly |
JP6463938B2 (en) * | 2014-10-08 | 2019-02-06 | 日本特殊陶業株式会社 | Electrostatic chuck |
US10002782B2 (en) * | 2014-10-17 | 2018-06-19 | Lam Research Corporation | ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough |
CN107004626B (en) | 2014-11-20 | 2019-02-05 | 住友大阪水泥股份有限公司 | Electrostatic chuck apparatus |
JP6172301B2 (en) * | 2014-11-20 | 2017-08-02 | 住友大阪セメント株式会社 | Electrostatic chuck device |
JP6325424B2 (en) * | 2014-11-21 | 2018-05-16 | 日本特殊陶業株式会社 | Electrostatic chuck |
US20160149733A1 (en) * | 2014-11-26 | 2016-05-26 | Applied Materials, Inc. | Control architecture for devices in an rf environment |
US9872341B2 (en) * | 2014-11-26 | 2018-01-16 | Applied Materials, Inc. | Consolidated filter arrangement for devices in an RF environment |
KR102288349B1 (en) | 2014-12-09 | 2021-08-11 | 삼성디스플레이 주식회사 | Electrostatic chuck system and method for manufacturing organic light emitting display device using the same |
US9984911B2 (en) * | 2014-12-11 | 2018-05-29 | Applied Materials, Inc. | Electrostatic chuck design for high temperature RF applications |
CN104538341B (en) * | 2014-12-17 | 2017-06-27 | 中国地质大学(北京) | A kind of vacuum chamber electrostatic chuck adjusting means |
JP5962833B2 (en) * | 2015-01-16 | 2016-08-03 | Toto株式会社 | Electrostatic chuck |
KR102308906B1 (en) | 2015-03-26 | 2021-10-06 | 삼성디스플레이 주식회사 | Electrostatic chuck system and method for manufacturing organic light emitting display device using the same |
US10386821B2 (en) | 2015-06-22 | 2019-08-20 | Lam Research Corporation | Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values |
US9779974B2 (en) | 2015-06-22 | 2017-10-03 | Lam Research Corporation | System and method for reducing temperature transition in an electrostatic chuck |
US10381248B2 (en) * | 2015-06-22 | 2019-08-13 | Lam Research Corporation | Auto-correction of electrostatic chuck temperature non-uniformity |
US10763142B2 (en) | 2015-06-22 | 2020-09-01 | Lam Research Corporation | System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter |
JP6655310B2 (en) | 2015-07-09 | 2020-02-26 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
US9673025B2 (en) * | 2015-07-27 | 2017-06-06 | Lam Research Corporation | Electrostatic chuck including embedded faraday cage for RF delivery and associated methods for operation, monitoring, and control |
US20170092470A1 (en) * | 2015-09-28 | 2017-03-30 | Applied Materials, Inc. | Plasma reactor for processing a workpiece with an array of plasma point sources |
US10237916B2 (en) * | 2015-09-30 | 2019-03-19 | Tokyo Electron Limited | Systems and methods for ESC temperature control |
US10186437B2 (en) * | 2015-10-05 | 2019-01-22 | Lam Research Corporation | Substrate holder having integrated temperature measurement electrical devices |
US10083853B2 (en) * | 2015-10-19 | 2018-09-25 | Lam Research Corporation | Electrostatic chuck design for cooling-gas light-up prevention |
US10690414B2 (en) | 2015-12-11 | 2020-06-23 | Lam Research Corporation | Multi-plane heater for semiconductor substrate support |
CN106935468A (en) * | 2015-12-31 | 2017-07-07 | 中微半导体设备(上海)有限公司 | A kind of semiconductor processor and the multi-region temp controlling heater for semiconductor processor |
US10582570B2 (en) * | 2016-01-22 | 2020-03-03 | Applied Materials, Inc. | Sensor system for multi-zone electrostatic chuck |
WO2017159590A1 (en) * | 2016-03-14 | 2017-09-21 | Toto株式会社 | Electrostatic chuck |
JP6226092B2 (en) * | 2016-03-14 | 2017-11-08 | Toto株式会社 | Electrostatic chuck |
KR102513443B1 (en) * | 2016-03-15 | 2023-03-24 | 삼성전자주식회사 | electrostatic chuck and substrate processing apparatus including the same |
US10973088B2 (en) | 2016-04-18 | 2021-04-06 | Applied Materials, Inc. | Optically heated substrate support assembly with removable optical fibers |
KR20170123830A (en) * | 2016-04-29 | 2017-11-09 | 세메스 주식회사 | Apparatus for controlling temperature of substrate, apparatus for treating substrate comprising the same, and method of controlling the same |
JP6982126B2 (en) * | 2016-05-06 | 2021-12-17 | 日本特殊陶業株式会社 | Heating member and electrostatic chuck |
US10667379B2 (en) * | 2016-05-10 | 2020-05-26 | Lam Research Corporation | Connections between laminated heater and heater voltage inputs |
US10764966B2 (en) | 2016-05-10 | 2020-09-01 | Lam Research Corporation | Laminated heater with different heater trace materials |
JP6611666B2 (en) * | 2016-05-16 | 2019-11-27 | 東京エレクトロン株式会社 | Mounting table system, substrate processing apparatus, and temperature control method |
JP6238097B1 (en) * | 2016-07-20 | 2017-11-29 | Toto株式会社 | Electrostatic chuck |
US20180053666A1 (en) * | 2016-08-19 | 2018-02-22 | Applied Materials, Inc. | Substrate carrier with array of independently controllable heater elements |
US10685861B2 (en) | 2016-08-26 | 2020-06-16 | Applied Materials, Inc. | Direct optical heating of substrates through optical guide |
US10892179B2 (en) * | 2016-11-08 | 2021-01-12 | Lam Research Corporation | Electrostatic chuck including clamp electrode assembly forming portion of Faraday cage for RF delivery and associated methods |
US10079168B2 (en) * | 2016-11-08 | 2018-09-18 | Lam Research Corporation | Ceramic electrostatic chuck including embedded Faraday cage for RF delivery and associated methods for operation, monitoring, and control |
US10725485B2 (en) * | 2016-12-15 | 2020-07-28 | Lam Research Corporation | System and method for calculating substrate support temperature |
KR101877667B1 (en) * | 2017-02-28 | 2018-07-11 | 세메스 주식회사 | Method of testing semiconductor packages |
US11350490B2 (en) * | 2017-03-08 | 2022-05-31 | Raytheon Company | Integrated temperature control for multi-layer ceramics and method |
JP7158131B2 (en) | 2017-05-30 | 2022-10-21 | 東京エレクトロン株式会社 | Stage and plasma processing equipment |
JP6688763B2 (en) * | 2017-05-30 | 2020-04-28 | 東京エレクトロン株式会社 | Plasma processing method |
KR102398880B1 (en) * | 2017-06-02 | 2022-05-17 | 삼성디스플레이 주식회사 | Heat treatment apparatus and method of manufacturing film using the same |
KR102435888B1 (en) * | 2017-07-04 | 2022-08-25 | 삼성전자주식회사 | Electro-static chuck, apparatus for processing substrate and manufacturing method of semiconductor device using the same |
US10714372B2 (en) | 2017-09-20 | 2020-07-14 | Applied Materials, Inc. | System for coupling a voltage to portions of a substrate |
US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
US10763150B2 (en) | 2017-09-20 | 2020-09-01 | Applied Materials, Inc. | System for coupling a voltage to spatially segmented portions of the wafer with variable voltage |
US10904996B2 (en) | 2017-09-20 | 2021-01-26 | Applied Materials, Inc. | Substrate support with electrically floating power supply |
US10811296B2 (en) | 2017-09-20 | 2020-10-20 | Applied Materials, Inc. | Substrate support with dual embedded electrodes |
US11551909B2 (en) * | 2017-10-02 | 2023-01-10 | Tokyo Electron Limited | Ultra-localized and plasma uniformity control in a plasma processing system |
US11236422B2 (en) * | 2017-11-17 | 2022-02-01 | Lam Research Corporation | Multi zone substrate support for ALD film property correction and tunability |
US10306776B1 (en) * | 2017-11-29 | 2019-05-28 | Lam Research Corporation | Substrate processing system printed-circuit control board assembly with one or more heater layers |
CN108766904B (en) * | 2018-04-26 | 2021-03-12 | 上海华力微电子有限公司 | Temperature monitoring method for electrostatic adsorption disc |
US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
WO2020004091A1 (en) * | 2018-06-29 | 2020-01-02 | 東京エレクトロン株式会社 | Plasma processing device, plasma state detection method, and plasma state detection program |
JP7456951B2 (en) | 2018-07-05 | 2024-03-27 | ラム リサーチ コーポレーション | Dynamic temperature control of substrate supports in substrate processing systems |
KR20200023988A (en) | 2018-08-27 | 2020-03-06 | 삼성전자주식회사 | Electro-static chuck and wafer etching device comprising the same |
US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
CN111211029B (en) * | 2018-11-21 | 2023-09-01 | 中微半导体设备(上海)股份有限公司 | Multi-zone temperature-control plasma reactor |
KR20210090717A (en) | 2018-12-07 | 2021-07-20 | 램 리써치 코포레이션 | Long Life Extended Temperature Range Embedded Diode Design for Electrostatic Chuck with Array of Multiplexed Heaters |
CN111326388B (en) * | 2018-12-17 | 2023-02-28 | 中微半导体设备(上海)股份有限公司 | Heating device for supporting substrate and plasma processor |
CN111383894B (en) * | 2018-12-29 | 2022-12-30 | 中微半导体设备(上海)股份有限公司 | Plasma processor and electrostatic chuck heating method |
CN109459896A (en) * | 2018-12-29 | 2019-03-12 | 武汉华星光电技术有限公司 | Narrow frame display module and its display device |
CN111383891B (en) * | 2018-12-29 | 2023-03-10 | 中微半导体设备(上海)股份有限公司 | Temperature control device for semiconductor processing equipment and temperature control method thereof |
CN113169026B (en) | 2019-01-22 | 2024-04-26 | 应用材料公司 | Feedback loop for controlling pulse voltage waveform |
US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
JP7254542B2 (en) | 2019-02-01 | 2023-04-10 | 東京エレクトロン株式会社 | Mounting table and substrate processing device |
US11367645B2 (en) * | 2019-03-13 | 2022-06-21 | Applied Materials, Inc. | Temperature tunable multi-zone electrostatic chuck |
US11562913B2 (en) * | 2019-04-25 | 2023-01-24 | Watlow Electric Manufacturing Company | Multi-zone azimuthal heater |
KR102255449B1 (en) * | 2019-08-13 | 2021-05-25 | 파워큐브세미 (주) | Heater |
US11043387B2 (en) | 2019-10-30 | 2021-06-22 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
US20210175103A1 (en) * | 2019-12-06 | 2021-06-10 | Applied Materials, Inc. | In situ failure detection in semiconductor processing chambers |
KR102323082B1 (en) * | 2019-12-30 | 2021-11-09 | 세메스 주식회사 | Apparatus for controlling temperature of substrate, and apparatus for treating substrate comprising the same |
CN111121452B (en) * | 2020-01-09 | 2020-09-18 | 永康市利高工具厂 | Heater based on mutual switching of conductor and semiconductor |
JP7429126B2 (en) * | 2020-01-31 | 2024-02-07 | 新光電気工業株式会社 | Board fixing device |
JP7411431B2 (en) * | 2020-01-31 | 2024-01-11 | 新光電気工業株式会社 | Electrostatic chuck, substrate fixing device |
JP7018978B2 (en) * | 2020-01-31 | 2022-02-14 | 株式会社日立ハイテク | Plasma processing equipment |
JP2021132190A (en) * | 2020-02-21 | 2021-09-09 | 東京エレクトロン株式会社 | Substrate processing apparatus and mounting table |
JP7413128B2 (en) | 2020-04-01 | 2024-01-15 | 東京エレクトロン株式会社 | board support stand |
KR102593142B1 (en) | 2020-05-19 | 2023-10-25 | 세메스 주식회사 | Apparatus for treating substrate and method for controlling temperature of ferrite core |
KR20220006952A (en) * | 2020-07-09 | 2022-01-18 | 삼성전자주식회사 | Plasma processing apparatus and method of fabricating semiconductor device using the same |
US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
CN114496693A (en) * | 2020-11-11 | 2022-05-13 | 中微半导体设备(上海)股份有限公司 | Multi-zone heating device, lower electrode assembly, plasma processing device and temperature adjusting method |
CN114496692B (en) * | 2020-11-11 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | Heating assembly, substrate bearing assembly and plasma processing device thereof |
CN114496886A (en) | 2020-11-13 | 2022-05-13 | 新光电气工业株式会社 | Substrate fixing device, electrostatic chuck and manufacturing method of electrostatic chuck |
US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US20220248500A1 (en) * | 2021-02-04 | 2022-08-04 | Applied Materials, Inc. | Multi-zone heater control for wafer processing equipment |
US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
KR102368832B1 (en) * | 2021-07-08 | 2022-03-02 | 에이피티씨 주식회사 | An Electrostatic Chuck with Multi Heating Areas |
JP7213592B1 (en) | 2021-08-19 | 2023-01-27 | アダプティブ プラズマ テクノロジー コーポレーション | Electrostatic chuck with multiple heating zone structure |
US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
Family Cites Families (120)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3440883A (en) | 1966-12-01 | 1969-04-29 | Monsanto Co | Electronic semiconductor thermometer |
JPS5546346A (en) | 1978-09-27 | 1980-04-01 | Tokyo Electric Co Ltd | Roaster |
JPS601918B2 (en) | 1980-04-26 | 1985-01-18 | ライオン株式会社 | Phosphorus-free detergent composition with low recontamination |
JPS601918A (en) | 1983-06-17 | 1985-01-08 | Fuji Electric Co Ltd | Matrix-type selecting circuit |
JPS621176A (en) | 1985-06-26 | 1987-01-07 | Hitachi Ltd | Head supporting device |
JPH0610391B2 (en) | 1989-11-17 | 1994-02-09 | 株式会社ナブコ | Guide device for plug door |
US5536918A (en) | 1991-08-16 | 1996-07-16 | Tokyo Electron Sagami Kabushiki Kaisha | Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers |
FR2682253A1 (en) | 1991-10-07 | 1993-04-09 | Commissariat Energie Atomique | HEATING SOLE FOR PROVIDING THE HEATING OF AN OBJECT PROVIDED ON ITS SURFACE AND CHEMICAL PROCESSING REACTOR PROVIDED WITH SAID SOLE. |
US5255520A (en) | 1991-12-20 | 1993-10-26 | Refir Technologies | Advanced thermoelectric heating and cooling system |
US5414245A (en) | 1992-08-03 | 1995-05-09 | Hewlett-Packard Corporation | Thermal-ink heater array using rectifying material |
DE4231702C2 (en) | 1992-09-22 | 1995-05-24 | Litef Gmbh | Thermoelectric, heatable cooling chamber |
KR100290748B1 (en) | 1993-01-29 | 2001-06-01 | 히가시 데쓰로 | Plasma processing apparatus |
US5504471A (en) | 1993-09-16 | 1996-04-02 | Hewlett-Packard Company | Passively-multiplexed resistor array |
JPH07106319A (en) * | 1993-09-30 | 1995-04-21 | Hitachi Electron Eng Co Ltd | Electromagnetic shielding method for heating equipment of cvd reaction furnace |
JP3257328B2 (en) | 1995-03-16 | 2002-02-18 | 株式会社日立製作所 | Plasma processing apparatus and plasma processing method |
US5667622A (en) | 1995-08-25 | 1997-09-16 | Siemens Aktiengesellschaft | In-situ wafer temperature control apparatus for single wafer tools |
JPH09213781A (en) | 1996-02-01 | 1997-08-15 | Tokyo Electron Ltd | Stage structure and processor using it |
US5740016A (en) | 1996-03-29 | 1998-04-14 | Lam Research Corporation | Solid state temperature controlled substrate holder |
WO1998005060A1 (en) | 1996-07-31 | 1998-02-05 | The Board Of Trustees Of The Leland Stanford Junior University | Multizone bake/chill thermal cycling module |
KR200159921Y1 (en) | 1996-11-23 | 1999-11-01 | 이세원 | Up/down control circuit of lifter |
JPH10204645A (en) * | 1997-01-17 | 1998-08-04 | Hitachi Electron Eng Co Ltd | Lower electrode |
JP3526184B2 (en) | 1997-03-17 | 2004-05-10 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
US6222161B1 (en) | 1998-01-12 | 2001-04-24 | Tokyo Electron Limited | Heat treatment apparatus |
JP3892609B2 (en) | 1999-02-16 | 2007-03-14 | 株式会社東芝 | Hot plate and method for manufacturing semiconductor device |
US6353209B1 (en) | 1999-03-04 | 2002-03-05 | Board Of Trustees Of The Leland Stanford Junior University | Temperature processing module |
US6100506A (en) | 1999-07-26 | 2000-08-08 | International Business Machines Corporation | Hot plate with in situ surface temperature adjustment |
US6740853B1 (en) | 1999-09-29 | 2004-05-25 | Tokyo Electron Limited | Multi-zone resistance heater |
WO2001031978A1 (en) | 1999-10-22 | 2001-05-03 | Ibiden Co., Ltd. | Ceramic heater |
US6271459B1 (en) | 2000-04-26 | 2001-08-07 | Wafermasters, Inc. | Heat management in wafer processing equipment using thermoelectric device |
US6515207B1 (en) | 2000-11-08 | 2003-02-04 | Maestro Alex Gregory | Adjustable string tree |
US6403403B1 (en) | 2000-09-12 | 2002-06-11 | The Aerospace Corporation | Diode isolated thin film fuel cell array addressing method |
AU2002212963A1 (en) | 2000-10-25 | 2002-05-06 | Tokyo Electron Limited | Method of and structure for controlling electrode temperature |
US6630201B2 (en) | 2001-04-05 | 2003-10-07 | Angstron Systems, Inc. | Adsorption process for atomic layer deposition |
US6501052B2 (en) | 2000-12-22 | 2002-12-31 | Chrysalis Technologies Incorporated | Aerosol generator having multiple heating zones and methods of use thereof |
AU2002240261A1 (en) | 2001-03-02 | 2002-09-19 | Tokyo Electron Limited | Method and apparatus for active temperature control of susceptors |
US6746616B1 (en) | 2001-03-27 | 2004-06-08 | Advanced Micro Devices, Inc. | Method and apparatus for providing etch uniformity using zoned temperature control |
US6741446B2 (en) | 2001-03-30 | 2004-05-25 | Lam Research Corporation | Vacuum plasma processor and method of operating same |
JP3582518B2 (en) | 2001-04-18 | 2004-10-27 | 住友電気工業株式会社 | Resistance heating element circuit pattern and substrate processing apparatus using the same |
CN100401852C (en) | 2001-04-30 | 2008-07-09 | 科林研发公司 | Method and apparatus for controlling spatial temperature distribution across surface of workpiece support |
US6847014B1 (en) | 2001-04-30 | 2005-01-25 | Lam Research Corporation | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support |
US20050211385A1 (en) * | 2001-04-30 | 2005-09-29 | Lam Research Corporation, A Delaware Corporation | Method and apparatus for controlling spatial temperature distribution |
US6795292B2 (en) | 2001-05-15 | 2004-09-21 | Dennis Grimard | Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber |
US20060191637A1 (en) | 2001-06-21 | 2006-08-31 | John Zajac | Etching Apparatus and Process with Thickness and Uniformity Control |
US6483690B1 (en) | 2001-06-28 | 2002-11-19 | Lam Research Corporation | Ceramic electrostatic chuck assembly and method of making |
JP3897563B2 (en) | 2001-10-24 | 2007-03-28 | 日本碍子株式会社 | Heating device |
US6739138B2 (en) | 2001-11-26 | 2004-05-25 | Innovations Inc. | Thermoelectric modules and a heating and cooling apparatus incorporating same |
US6921724B2 (en) | 2002-04-02 | 2005-07-26 | Lam Research Corporation | Variable temperature processes for tunable electrostatic chuck |
US6612673B1 (en) | 2002-04-29 | 2003-09-02 | Hewlett-Packard Development Company, L.P. | System and method for predicting dynamic thermal conditions of an inkjet printing system |
JP3808407B2 (en) | 2002-07-05 | 2006-08-09 | 住友大阪セメント株式会社 | Electrode built-in susceptor and manufacturing method thereof |
US6886347B2 (en) | 2002-07-11 | 2005-05-03 | Temptronic Corporation | Workpiece chuck with temperature control assembly having spacers between layers providing clearance for thermoelectric modules |
US6825681B2 (en) | 2002-07-19 | 2004-11-30 | Delta Design, Inc. | Thermal control of a DUT using a thermal control substrate |
US20040027781A1 (en) | 2002-08-12 | 2004-02-12 | Hiroji Hanawa | Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling |
JP3924524B2 (en) | 2002-10-29 | 2007-06-06 | 京セラ株式会社 | Wafer heating apparatus and manufacturing method thereof |
US7372001B2 (en) | 2002-12-17 | 2008-05-13 | Nhk Spring Co., Ltd. | Ceramics heater |
US6979805B2 (en) | 2003-01-08 | 2005-12-27 | Hewlett-Packard Development Company, L.P. | Fuel-cell resistors and methods |
JP3950068B2 (en) * | 2003-02-07 | 2007-07-25 | 三井造船株式会社 | Temperature control method for semiconductor manufacturing equipment |
US6825617B2 (en) | 2003-02-27 | 2004-11-30 | Hitachi High-Technologies Corporation | Semiconductor processing apparatus |
JP4607865B2 (en) | 2003-03-28 | 2011-01-05 | 東京エレクトロン株式会社 | Method and system for substrate temperature control |
US6989210B2 (en) | 2003-04-23 | 2006-01-24 | Hewlett-Packard Development Company, L.P. | Fuel cartridge with thermo-degradable barrier system |
US8974630B2 (en) | 2003-05-07 | 2015-03-10 | Sungkyunkwan University | Inductively coupled plasma processing apparatus having internal linear antenna for large area processing |
US20050016465A1 (en) | 2003-07-23 | 2005-01-27 | Applied Materials, Inc. | Electrostatic chuck having electrode with rounded edge |
TWI247551B (en) | 2003-08-12 | 2006-01-11 | Ngk Insulators Ltd | Method of manufacturing electrical resistance heating element |
JP2005123286A (en) | 2003-10-15 | 2005-05-12 | Hitachi Kokusai Electric Inc | Substrate treatment equipment |
KR20050053464A (en) | 2003-12-01 | 2005-06-08 | 정준호 | Two terminal semiconductor memory using cascaded diodes |
US20100257871A1 (en) | 2003-12-11 | 2010-10-14 | Rama Venkatasubramanian | Thin film thermoelectric devices for power conversion and cooling |
US7250309B2 (en) | 2004-01-09 | 2007-07-31 | Applied Materials, Inc. | Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control |
US6972524B1 (en) | 2004-03-24 | 2005-12-06 | Lam Research Corporation | Plasma processing system control |
JP4349952B2 (en) | 2004-03-24 | 2009-10-21 | 京セラ株式会社 | Wafer support member and manufacturing method thereof |
US7141763B2 (en) | 2004-03-26 | 2006-11-28 | Tokyo Electron Limited | Method and apparatus for rapid temperature change and control |
US7697260B2 (en) | 2004-03-31 | 2010-04-13 | Applied Materials, Inc. | Detachable electrostatic chuck |
JP2005294237A (en) | 2004-04-05 | 2005-10-20 | Aun:Kk | Planar heater |
JP4281605B2 (en) | 2004-04-08 | 2009-06-17 | 住友電気工業株式会社 | Semiconductor heating device |
US20050229854A1 (en) | 2004-04-15 | 2005-10-20 | Tokyo Electron Limited | Method and apparatus for temperature change and control |
US7415312B2 (en) | 2004-05-25 | 2008-08-19 | Barnett Jr James R | Process module tuning |
KR20050121913A (en) | 2004-06-23 | 2005-12-28 | 삼성전자주식회사 | Apparatus for baking |
US7396431B2 (en) | 2004-09-30 | 2008-07-08 | Tokyo Electron Limited | Plasma processing system for treating a substrate |
KR100632544B1 (en) | 2004-12-15 | 2006-10-09 | 현대자동차주식회사 | DC driver gate driver circuit |
US7475551B2 (en) | 2004-12-23 | 2009-01-13 | Nanocoolers, Inc. | System employing temporal integration of thermoelectric action |
US20060226123A1 (en) | 2005-04-07 | 2006-10-12 | Applied Materials, Inc. | Profile control using selective heating |
JP4667158B2 (en) | 2005-08-09 | 2011-04-06 | パナソニック株式会社 | Wafer level burn-in method |
JP2007081160A (en) | 2005-09-14 | 2007-03-29 | Fujitsu Ltd | Method for manufacturing semiconductor device |
JP4483751B2 (en) | 2005-09-16 | 2010-06-16 | 株式会社デンソー | Power supply reverse connection protection circuit |
US20070125762A1 (en) | 2005-12-01 | 2007-06-07 | Applied Materials, Inc. | Multi-zone resistive heater |
US8168050B2 (en) | 2006-07-05 | 2012-05-01 | Momentive Performance Materials Inc. | Electrode pattern for resistance heating element and wafer processing apparatus |
US7837826B2 (en) | 2006-07-18 | 2010-11-23 | Lam Research Corporation | Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof |
JP4394667B2 (en) | 2006-08-22 | 2010-01-06 | 日本碍子株式会社 | Manufacturing method of electrostatic chuck with heater |
US7557328B2 (en) | 2006-09-25 | 2009-07-07 | Tokyo Electron Limited | High rate method for stable temperature control of a substrate |
US7297894B1 (en) | 2006-09-25 | 2007-11-20 | Tokyo Electron Limited | Method for multi-step temperature control of a substrate |
US7723648B2 (en) | 2006-09-25 | 2010-05-25 | Tokyo Electron Limited | Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system |
JP4850664B2 (en) | 2006-11-02 | 2012-01-11 | 東京エレクトロン株式会社 | Heat treatment plate temperature setting method, program, computer-readable recording medium storing the program, and heat treatment plate temperature setting device |
KR20080058109A (en) | 2006-12-21 | 2008-06-25 | 동부일렉트로닉스 주식회사 | Wafer heating device and the wafer heating method |
US8222574B2 (en) | 2007-01-15 | 2012-07-17 | Applied Materials, Inc. | Temperature measurement and control of wafer support in thermal processing chamber |
US20080197015A1 (en) | 2007-02-16 | 2008-08-21 | Terry Bluck | Multiple-magnetron sputtering source with plasma confinement |
DE102007015368A1 (en) | 2007-03-28 | 2008-10-02 | Endress + Hauser Flowtec Ag | Method for operating a magnetic-inductive flowmeter |
KR100849069B1 (en) | 2007-04-20 | 2008-07-30 | 주식회사 하이닉스반도체 | Electro static discharge device |
US8057602B2 (en) | 2007-05-09 | 2011-11-15 | Applied Materials, Inc. | Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber |
US20090000738A1 (en) | 2007-06-29 | 2009-01-01 | Neil Benjamin | Arrays of inductive elements for minimizing radial non-uniformity in plasma |
JP5301812B2 (en) * | 2007-11-14 | 2013-09-25 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP2009170509A (en) * | 2008-01-11 | 2009-07-30 | Hitachi High-Technologies Corp | Plasma processing apparatus including electrostatic chuck with built-in heater |
JP4486135B2 (en) | 2008-01-22 | 2010-06-23 | 東京エレクトロン株式会社 | Temperature control mechanism and processing apparatus using the same |
JP5351479B2 (en) | 2008-01-28 | 2013-11-27 | 東京エレクトロン株式会社 | Cooling structure of heating source |
JP5307445B2 (en) | 2008-04-28 | 2013-10-02 | 日本碍子株式会社 | Substrate holder and method for manufacturing the same |
US20090274590A1 (en) | 2008-05-05 | 2009-11-05 | Applied Materials, Inc. | Plasma reactor electrostatic chuck having a coaxial rf feed and multizone ac heater power transmission through the coaxial feed |
US8206552B2 (en) | 2008-06-25 | 2012-06-26 | Applied Materials, Inc. | RF power delivery system in a semiconductor apparatus |
US20100116788A1 (en) | 2008-11-12 | 2010-05-13 | Lam Research Corporation | Substrate temperature control by using liquid controlled multizone substrate support |
JP2010153730A (en) | 2008-12-26 | 2010-07-08 | Omron Corp | Wiring structure, heater driving device, measuring device, and control system |
US8503151B2 (en) | 2009-09-30 | 2013-08-06 | Lam Research Corporation | Plasma arrestor insert |
KR101690327B1 (en) * | 2009-03-31 | 2016-12-27 | 램 리써치 코포레이션 | Plasma arrestor insert |
GB2470063B (en) | 2009-05-08 | 2011-09-28 | Siemens Magnet Technology Ltd | Quench propagation circuit for superconducting magnets |
WO2011006018A2 (en) | 2009-07-08 | 2011-01-13 | Plasmasi, Inc. | Apparatus and method for plasma processing |
US8637794B2 (en) * | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
WO2011081645A2 (en) * | 2009-12-15 | 2011-07-07 | Lam Research Corporation | Adjusting substrate temperature to improve cd uniformity |
CN103081088B (en) * | 2010-08-06 | 2016-04-06 | 应用材料公司 | The method of electrostatic chuck and use electrostatic chuck |
US8633423B2 (en) * | 2010-10-14 | 2014-01-21 | Applied Materials, Inc. | Methods and apparatus for controlling substrate temperature in a process chamber |
US9123762B2 (en) * | 2010-10-22 | 2015-09-01 | Applied Materials, Inc. | Substrate support with symmetrical feed structure |
US8791392B2 (en) | 2010-10-22 | 2014-07-29 | Lam Research Corporation | Methods of fault detection for multiplexed heater array |
US8546732B2 (en) | 2010-11-10 | 2013-10-01 | Lam Research Corporation | Heating plate with planar heater zones for semiconductor processing |
DE102010053194A1 (en) * | 2010-12-03 | 2012-06-06 | Carl Zeiss Nts Gmbh | Particle beam device with deflection system |
KR101868130B1 (en) * | 2011-08-30 | 2018-06-18 | 와틀로 일렉트릭 매뉴팩츄어링 컴파니 | Thermal array system |
JP6010391B2 (en) | 2012-08-24 | 2016-10-19 | 旭化成株式会社 | Mold manufacturing method |
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- 2012-11-30 US US13/690,745 patent/US10049948B2/en active Active
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CN103854947B (en) | 2017-06-30 |
KR102357476B1 (en) | 2022-02-08 |
CN103854947A (en) | 2014-06-11 |
US10049948B2 (en) | 2018-08-14 |
SG2013083647A (en) | 2014-06-27 |
JP6276005B2 (en) | 2018-02-07 |
TW201438097A (en) | 2014-10-01 |
US10770363B2 (en) | 2020-09-08 |
KR102208488B1 (en) | 2021-01-27 |
KR20140070494A (en) | 2014-06-10 |
TWI619163B (en) | 2018-03-21 |
US20180374763A1 (en) | 2018-12-27 |
JP2014112672A (en) | 2014-06-19 |
US20140154819A1 (en) | 2014-06-05 |
KR20210013247A (en) | 2021-02-03 |
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