CN108766904B - Temperature monitoring method for electrostatic adsorption disc - Google Patents
Temperature monitoring method for electrostatic adsorption disc Download PDFInfo
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- CN108766904B CN108766904B CN201810387262.6A CN201810387262A CN108766904B CN 108766904 B CN108766904 B CN 108766904B CN 201810387262 A CN201810387262 A CN 201810387262A CN 108766904 B CN108766904 B CN 108766904B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to the technical field of semiconductors, in particular to a temperature monitoring method of an electrostatic adsorption disc, which comprises the following steps: step S1, acquiring the temperature of the electrostatic adsorption disc detected by the temperature sensor and the output power of the heater in real time; step S2, judging whether the temperature of the electrostatic adsorption disc detected by the temperature sensor deviates from a standard temperature line and exceeds a preset standard; if yes, go to step S4; if not, go to step S3; step S3, judging whether the output power of the heater is in the standard power interval; if yes, return to step S1; if not, go to step S4; step S4, stopping the operation of the etching machine; the temperature of the electrostatic adsorption disc and the output power of the heater are monitored simultaneously, the accuracy of temperature monitoring is high, and the yield of wafer etching is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a temperature monitoring method for an electrostatic adsorption disc.
Background
In the existing wafer etching process, an electrostatic adsorption disc is generally required to fix a wafer, and in the wafer etching process, the temperature of the electrostatic adsorption disc needs to be strictly controlled, and usually the temperature of the electrostatic adsorption disc needs to be controlled near a standard temperature line, so as to ensure that the thickness of the etched wafer is controllable.
The temperature sensor is adopted to detect the temperature of the electrostatic adsorption disc in real time, and the output power of the heater is controlled according to the detected temperature, so that the temperature of the electrostatic adsorption disc can be effectively controlled. However, such a temperature closed-loop control system cannot achieve effective temperature control when the temperature acquisition of the temperature sensor is distorted, and may cause over-etching or under-etching of the wafer.
Disclosure of Invention
Aiming at the problems, the invention provides a temperature monitoring method of an electrostatic adsorption disc, which is applied to a temperature control system, wherein the temperature control system is used for controlling the temperature of the electrostatic adsorption disc of an etching machine;
the temperature control system comprises a temperature sensor, a controller and a heater which are connected in sequence;
the temperature sensor is used for detecting the temperature of the electrostatic adsorption disc, and the controller controls the heating of the heater according to the temperature of the electrostatic adsorption disc detected by the temperature sensor;
a standard temperature line for the operation of the electrostatic adsorption disc is preset in the temperature control system;
the temperature monitoring method comprises the steps of pre-storing a standard power interval of the heater in the temperature control system; further comprising:
step S1, acquiring the temperature of the electrostatic adsorption disk detected by the temperature sensor and the output power of the heater in real time;
step S2, determining whether the temperature of the electrostatic adsorption disk detected by the temperature sensor deviates from the standard temperature line and exceeds a preset standard;
if yes, go to step S4; if not, go to step S3;
step S3, judging whether the output power of the heater is in the standard power interval;
if yes, returning to the step S1; if not, go to step S4;
and step S4, stopping the operation of the etching machine.
In the temperature monitoring method, the standard power interval is obtained through multiple etching experiments;
the upper limit value of the standard power interval is the maximum value of the output power of the heater when the experimental result in the etching experiment meets the requirement;
and the lower limit value of the standard power interval is the minimum value of the output power of the heater when the experimental result in the etching experiment meets the requirement.
In the temperature monitoring method, the standard temperature line is a temperature curve recorded when the flatness of the surface of the wafer is optimal in the etching experiment.
In the above temperature monitoring method, in step S2, when the temperature of the electrostatic adsorption disk detected by the temperature sensor exceeds the standard temperature line, the preset criterion is 115% higher than the standard temperature line;
when the temperature of the electrostatic adsorption disc detected by the temperature sensor is lower than the standard temperature line, the preset standard is lower than 85% of the standard temperature line.
In the above temperature monitoring method, the etching process of the etching machine includes an etching preparation stage, a main etching stage and an etching stop stage;
the temperature monitoring method is carried out in the main etching stage.
In the temperature monitoring method, the temperature sensor detects the temperature of the electrostatic adsorption disk through the connected thermocouples arranged around the electrostatic adsorption disk.
In the temperature monitoring method, the electrostatic adsorption disk is further provided with a cooling device.
In the temperature monitoring method, a first monitor is used to display the temperature of the electrostatic adsorption plate detected by the temperature sensor.
In the above temperature monitoring method, a second monitor is used to display the output power of the heater.
Has the advantages that: according to the temperature monitoring method of the electrostatic adsorption disc, the temperature of the electrostatic adsorption disc and the output power of the heater are monitored simultaneously, the temperature monitoring accuracy is high, and the yield of wafer etching is improved.
Drawings
FIG. 1 is a flow chart illustrating the steps of a method for monitoring the temperature of an electrostatic chuck according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a temperature control system according to an embodiment of the present invention;
FIG. 3 is a temperature profile of an electrostatic chuck according to an embodiment of the present invention;
FIG. 4 is a graph of output power of a heater according to an embodiment of the present invention;
FIG. 5 is a graph illustrating the relationship between the output powers of the electrostatic chuck and the heater according to an embodiment of the present invention.
Detailed Description
The invention is further illustrated with reference to the following figures and examples.
In a preferred embodiment, as shown in fig. 1, a method for monitoring the temperature of an electrostatic chuck is provided, which can be applied to a temperature control system as shown in fig. 2, the temperature control system is used for controlling the temperature of an electrostatic chuck 1 of an etching machine;
the temperature control system may include a temperature sensor 10, a controller 20, and a heater 30 connected in sequence;
the temperature sensor is used for detecting the temperature of the electrostatic adsorption disc 1, and the controller 20 controls the heating of the heater 30 according to the temperature of the electrostatic adsorption disc 1 detected by the temperature sensor 10;
a standard temperature line for the operation of the electrostatic adsorption disc 1 is preset in the temperature control system;
the temperature monitoring method comprises the steps of pre-storing a standard power interval of a heater in a temperature control system; the method can also comprise the following steps:
step S1, acquiring the temperature of the electrostatic adsorption disk 1 detected by the temperature sensor 10 and the output power of the heater 30 in real time;
step S2, determining whether the temperature of the electrostatic adsorption disk 1 detected by the temperature sensor 10 deviates from the standard temperature line and exceeds a preset standard;
if yes, go to step S4; if not, go to step S3;
step S3, determining whether the output power of the heater 30 is within the standard power interval;
if yes, return to step S1; if not, go to step S4;
and step S4, stopping the operation of the etching machine.
In the above technical solution, if any one of the temperature of the electrostatic chuck 1 and the output power of the heater 30 is abnormal, it is determined that the whole temperature control system is abnormal, for example, the system is abnormal due to the temperature detection distortion of the temperature sensor 10 to the electrostatic chuck 1, and at this time, the shutdown inspection needs to be performed to avoid the situation of under-etching or over-etching caused by continuously etching the wafer; the temperature control system can also be provided with a storage device for storing data related to the standard power interval and the standard temperature line; as shown in fig. 3, the temperature of the electrostatic chuck 1 detected by the temperature sensor 10 is almost the same as the standard temperature line, but in fig. 4, the output power of the heater 30 is much greater than the standard power interval, and at this time, the etching machine needs to be stopped; there is also a plot of standard power in fig. 4, which may be a better line of power through long-term data statistics; the relationship between the electrostatic adsorption disk 1 and the output power of the heater 30 may be as shown in fig. 5.
In a preferred embodiment, the standard power interval is obtained by multiple etching experiments;
the upper limit value of the standard power interval is the maximum value of the output power of the heater 30 when the experimental result meets the requirement in the etching experiment;
the lower limit value of the standard power interval is the minimum value of the output power of the heater 30 when the experimental result in the etching experiment meets the requirement.
The technical scheme is only one case of the standard power interval, and in other cases, the standard power interval different from the standard power interval can be set through other algorithms or approaches.
In the above embodiment, the standard temperature line may be a temperature curve recorded when the flatness of the wafer surface is optimal in the etching experiment.
In a preferred embodiment, in step S2, when the temperature of the electrostatic adsorption disk 1 detected by the temperature sensor 10 exceeds the standard temperature line, the preset criterion may be 115% higher than the standard temperature line;
when the temperature of the electrostatic adsorption disc detected by the temperature sensor is lower than the standard temperature line, the preset standard is 85% lower than the standard temperature line.
In a preferred embodiment, the etching process of the etching machine comprises an etching preparation stage, a main etching stage and an etching stop stage;
the temperature monitoring method is carried out in the main etching stage.
In the above technical solution, since the temperature of the electrostatic chuck 1 in the main etching stage may greatly affect the etching degree of the wafer, a strict monitoring is required, as shown in fig. 3, and the temperature of the electrostatic chuck 1 in the main etching stage shown by an arrow in the figure should be kept as constant as possible.
In a preferred embodiment, the temperature sensor 10 detects the temperature of the electrostatic chuck 1 by connecting thermocouples disposed around the electrostatic chuck.
As shown in fig. 2, in a preferred embodiment, a cooling device for cooling the electrostatic chuck 1 may be further disposed on the electrostatic chuck 1.
In a preferred embodiment, as shown in fig. 2, a first monitor 40 is used to display the temperature of the electrostatic clamping disk 1 detected by the temperature sensor.
In a preferred embodiment, a second monitor 50 is used to display the output power of the heater 30, as shown in figure 2.
In summary, the temperature monitoring method for an electrostatic chuck according to the present invention includes: step S1, acquiring the temperature of the electrostatic adsorption disc detected by the temperature sensor and the output power of the heater in real time; step S2, judging whether the temperature of the electrostatic adsorption disc detected by the temperature sensor deviates from a standard temperature line and exceeds a preset standard; if yes, go to step S4; if not, go to step S3; step S3, judging whether the output power of the heater is in the standard power interval; if yes, return to step S1; if not, go to step S4; step S4, stopping the operation of the etching machine; the temperature of the electrostatic adsorption disc and the output power of the heater are monitored simultaneously, the accuracy of temperature monitoring is high, and the yield of wafer etching is improved.
While the specification concludes with claims defining exemplary embodiments of particular structures for practicing the invention, it is believed that other modifications will be made in the spirit of the invention. While the above invention sets forth presently preferred embodiments, these are not intended as limitations.
Various alterations and modifications will no doubt become apparent to those skilled in the art after having read the above description. Therefore, the appended claims should be construed to cover all such variations and modifications as fall within the true spirit and scope of the invention. Any and all equivalent ranges and contents within the scope of the claims should be considered to be within the intent and scope of the present invention.
Claims (9)
1. A temperature monitoring method of an electrostatic adsorption disc is applied to a temperature control system, wherein the temperature control system is used for controlling the temperature of the electrostatic adsorption disc of an etching machine;
the temperature control system comprises a temperature sensor, a controller and a heater which are connected in sequence;
the temperature sensor is used for detecting the temperature of the electrostatic adsorption disc, and the controller controls the heating of the heater according to the temperature of the electrostatic adsorption disc detected by the temperature sensor;
a standard temperature line for the operation of the electrostatic adsorption disc is preset in the temperature control system;
the temperature monitoring method is characterized by comprising the steps of pre-storing a standard power interval of the heater in the temperature control system; further comprising:
step S1, acquiring the temperature of the electrostatic adsorption disk detected by the temperature sensor and the output power of the heater in real time;
step S2, determining whether the temperature of the electrostatic adsorption disk detected by the temperature sensor deviates from the standard temperature line and exceeds a preset standard;
if yes, go to step S4; if not, go to step S3;
step S3, judging whether the output power of the heater is in the standard power interval;
if yes, returning to the step S1; if not, go to step S4;
and step S4, stopping the operation of the etching machine.
2. The method of claim 1, wherein the standard power interval is obtained by a plurality of etching experiments;
the upper limit value of the standard power interval is the maximum value of the output power of the heater when the experimental result in the etching experiment meets the requirement;
and the lower limit value of the standard power interval is the minimum value of the output power of the heater when the experimental result in the etching experiment meets the requirement.
3. The temperature monitoring method according to claim 2, wherein the standard temperature line is a temperature curve recorded when the flatness of the surface of the wafer is optimal in the etching experiment.
4. The temperature monitoring method according to claim 1, wherein in the step S2, when the temperature of the electrostatic adsorption disk detected by the temperature sensor exceeds the standard temperature line, the preset standard is 115% higher than the standard temperature line;
when the temperature of the electrostatic adsorption disc detected by the temperature sensor is lower than the standard temperature line, the preset standard is lower than 85% of the standard temperature line.
5. The temperature monitoring method according to claim 1, wherein the etching process of the etching machine comprises an etching preparation stage, a main etching stage and an etching stop stage;
the temperature monitoring method is carried out in the main etching stage.
6. The method of claim 1, wherein the temperature sensor senses the temperature of the electrostatic clamping disk via a thermocouple attached to and disposed around the electrostatic clamping disk.
7. The method of claim 1, wherein a cooling device is further disposed on the electrostatic chuck.
8. The temperature monitoring method according to claim 1, wherein the temperature of the electrostatic chuck detected by the temperature sensor is displayed using a first monitor.
9. The method of claim 1, wherein the output power of the heater is displayed using a second monitor.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810387262.6A CN108766904B (en) | 2018-04-26 | 2018-04-26 | Temperature monitoring method for electrostatic adsorption disc |
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| CN201810387262.6A CN108766904B (en) | 2018-04-26 | 2018-04-26 | Temperature monitoring method for electrostatic adsorption disc |
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| CN108766904A CN108766904A (en) | 2018-11-06 |
| CN108766904B true CN108766904B (en) | 2021-03-12 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010123810A (en) * | 2008-11-20 | 2010-06-03 | Ulvac Japan Ltd | Substrate supporting device and substrate temperature control method |
| US8724289B2 (en) * | 2011-05-09 | 2014-05-13 | Shinko Electric Industries Co., Ltd. | Substrate temperature adjusting-fixing device |
| CN103854947A (en) * | 2012-11-30 | 2014-06-11 | 朗姆研究公司 | Power switching system for esc with array of thermal control elements |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8546732B2 (en) * | 2010-11-10 | 2013-10-01 | Lam Research Corporation | Heating plate with planar heater zones for semiconductor processing |
| JP6064032B2 (en) * | 2013-03-15 | 2017-01-18 | 株式会社日立ハイテクノロジーズ | Charged particle beam equipment |
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- 2018-04-26 CN CN201810387262.6A patent/CN108766904B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010123810A (en) * | 2008-11-20 | 2010-06-03 | Ulvac Japan Ltd | Substrate supporting device and substrate temperature control method |
| US8724289B2 (en) * | 2011-05-09 | 2014-05-13 | Shinko Electric Industries Co., Ltd. | Substrate temperature adjusting-fixing device |
| CN103854947A (en) * | 2012-11-30 | 2014-06-11 | 朗姆研究公司 | Power switching system for esc with array of thermal control elements |
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| CN108766904A (en) | 2018-11-06 |
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