SG10201602251QA - Power Supply System, Plasma Processing Apparatus And Power Supply Control Method - Google Patents
Power Supply System, Plasma Processing Apparatus And Power Supply Control MethodInfo
- Publication number
- SG10201602251QA SG10201602251QA SG10201602251QA SG10201602251QA SG10201602251QA SG 10201602251Q A SG10201602251Q A SG 10201602251QA SG 10201602251Q A SG10201602251Q A SG 10201602251QA SG 10201602251Q A SG10201602251Q A SG 10201602251QA SG 10201602251Q A SG10201602251Q A SG 10201602251QA
- Authority
- SG
- Singapore
- Prior art keywords
- power supply
- processing apparatus
- control method
- plasma processing
- supply system
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32027—DC powered
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015059693A JP6424120B2 (ja) | 2015-03-23 | 2015-03-23 | 電源システム、プラズマ処理装置及び電源制御方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201602251QA true SG10201602251QA (en) | 2016-10-28 |
Family
ID=56976250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201602251QA SG10201602251QA (en) | 2015-03-23 | 2016-03-22 | Power Supply System, Plasma Processing Apparatus And Power Supply Control Method |
Country Status (6)
Country | Link |
---|---|
US (1) | US10056230B2 (zh) |
JP (1) | JP6424120B2 (zh) |
KR (1) | KR102283193B1 (zh) |
CN (1) | CN105990088B (zh) |
SG (1) | SG10201602251QA (zh) |
TW (1) | TWI700018B (zh) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6491888B2 (ja) * | 2015-01-19 | 2019-03-27 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
US11227745B2 (en) * | 2018-08-10 | 2022-01-18 | Eagle Harbor Technologies, Inc. | Plasma sheath control for RF plasma reactors |
WO2018008310A1 (ja) * | 2016-07-08 | 2018-01-11 | パナソニックIpマネジメント株式会社 | プラズマ放電装置及び空気清浄機 |
JP7158131B2 (ja) * | 2017-05-30 | 2022-10-21 | 東京エレクトロン株式会社 | ステージ及びプラズマ処理装置 |
US10510575B2 (en) * | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
WO2019096564A1 (en) * | 2017-11-17 | 2019-05-23 | Evatec Ag | Rf power delivery to vacuum plasma processing |
US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
JP7306886B2 (ja) * | 2018-07-30 | 2023-07-11 | 東京エレクトロン株式会社 | 制御方法及びプラズマ処理装置 |
JP7101096B2 (ja) * | 2018-10-12 | 2022-07-14 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
CN111383895B (zh) * | 2018-12-29 | 2022-04-08 | 江苏鲁汶仪器有限公司 | 一种等离子体刻蚀设备及其鞘层电压的测量方法 |
KR20210107716A (ko) | 2019-01-22 | 2021-09-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 펄스 전압 파형을 제어하기 위한 피드백 루프 |
JP6960421B2 (ja) * | 2019-01-23 | 2021-11-05 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
CN111916327B (zh) * | 2019-05-10 | 2023-04-28 | 中微半导体设备(上海)股份有限公司 | 多频率多阶段的等离子体射频输出的方法及其装置 |
US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03241649A (ja) * | 1990-02-17 | 1991-10-28 | Minoru Sugawara | プラズマ発生装置 |
US6174450B1 (en) | 1997-04-16 | 2001-01-16 | Lam Research Corporation | Methods and apparatus for controlling ion energy and plasma density in a plasma processing system |
JP2002324783A (ja) * | 2001-04-25 | 2002-11-08 | Toshiba Corp | 異常放電検出方法 |
JP3946467B2 (ja) * | 2001-07-10 | 2007-07-18 | 松下電器産業株式会社 | ドライエッチング方法 |
US7541283B2 (en) | 2002-08-30 | 2009-06-02 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
US7838430B2 (en) * | 2003-10-28 | 2010-11-23 | Applied Materials, Inc. | Plasma control using dual cathode frequency mixing |
CN102256432B (zh) * | 2004-06-21 | 2014-10-29 | 东京毅力科创株式会社 | 等离子体处理装置和方法 |
US7951262B2 (en) | 2004-06-21 | 2011-05-31 | Tokyo Electron Limited | Plasma processing apparatus and method |
US7740737B2 (en) | 2004-06-21 | 2010-06-22 | Tokyo Electron Limited | Plasma processing apparatus and method |
US7692916B2 (en) | 2005-03-31 | 2010-04-06 | Tokyo Electron Limited | Capacitive coupling plasma processing apparatus and method |
JP4704087B2 (ja) * | 2005-03-31 | 2011-06-15 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
US9536711B2 (en) * | 2007-03-30 | 2017-01-03 | Lam Research Corporation | Method and apparatus for DC voltage control on RF-powered electrode |
US20090004836A1 (en) * | 2007-06-29 | 2009-01-01 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping with enhanced charge neutralization |
JP5466480B2 (ja) * | 2009-02-20 | 2014-04-09 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置および記憶媒体 |
US8383001B2 (en) | 2009-02-20 | 2013-02-26 | Tokyo Electron Limited | Plasma etching method, plasma etching apparatus and storage medium |
US8414736B2 (en) * | 2009-09-03 | 2013-04-09 | Applied Materials, Inc. | Plasma reactor with tiltable overhead RF inductive source |
JP5571996B2 (ja) * | 2010-03-31 | 2014-08-13 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
KR20120022251A (ko) * | 2010-09-01 | 2012-03-12 | 삼성전자주식회사 | 플라즈마 식각방법 및 그의 장치 |
JP5405504B2 (ja) | 2011-01-31 | 2014-02-05 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
JP2013143432A (ja) * | 2012-01-10 | 2013-07-22 | Tokyo Electron Ltd | プラズマ処理装置 |
JP5922218B2 (ja) * | 2012-02-20 | 2016-05-24 | 東京エレクトロン株式会社 | 電源システム及びプラズマ処理装置 |
JP5921964B2 (ja) * | 2012-06-11 | 2016-05-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプローブ装置 |
JP6002556B2 (ja) * | 2012-11-27 | 2016-10-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
KR102168064B1 (ko) | 2013-02-20 | 2020-10-20 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
JP6180799B2 (ja) * | 2013-06-06 | 2017-08-16 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
-
2015
- 2015-03-23 JP JP2015059693A patent/JP6424120B2/ja active Active
-
2016
- 2016-03-15 TW TW105107829A patent/TWI700018B/zh active
- 2016-03-21 KR KR1020160033474A patent/KR102283193B1/ko active IP Right Grant
- 2016-03-21 US US15/075,505 patent/US10056230B2/en active Active
- 2016-03-22 SG SG10201602251QA patent/SG10201602251QA/en unknown
- 2016-03-23 CN CN201610168860.5A patent/CN105990088B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
TW201707520A (zh) | 2017-02-16 |
CN105990088A (zh) | 2016-10-05 |
US20160284514A1 (en) | 2016-09-29 |
TWI700018B (zh) | 2020-07-21 |
JP2016181343A (ja) | 2016-10-13 |
US10056230B2 (en) | 2018-08-21 |
KR20160113983A (ko) | 2016-10-04 |
CN105990088B (zh) | 2018-08-28 |
JP6424120B2 (ja) | 2018-11-14 |
KR102283193B1 (ko) | 2021-07-29 |
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