SG10201602251QA - Power Supply System, Plasma Processing Apparatus And Power Supply Control Method - Google Patents

Power Supply System, Plasma Processing Apparatus And Power Supply Control Method

Info

Publication number
SG10201602251QA
SG10201602251QA SG10201602251QA SG10201602251QA SG10201602251QA SG 10201602251Q A SG10201602251Q A SG 10201602251QA SG 10201602251Q A SG10201602251Q A SG 10201602251QA SG 10201602251Q A SG10201602251Q A SG 10201602251QA SG 10201602251Q A SG10201602251Q A SG 10201602251QA
Authority
SG
Singapore
Prior art keywords
power supply
processing apparatus
control method
plasma processing
supply system
Prior art date
Application number
SG10201602251QA
Other languages
English (en)
Inventor
Taichi Hirano
Junji Ishibashi
Keiki Ito
Kunihiro Sato
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG10201602251QA publication Critical patent/SG10201602251QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
SG10201602251QA 2015-03-23 2016-03-22 Power Supply System, Plasma Processing Apparatus And Power Supply Control Method SG10201602251QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015059693A JP6424120B2 (ja) 2015-03-23 2015-03-23 電源システム、プラズマ処理装置及び電源制御方法

Publications (1)

Publication Number Publication Date
SG10201602251QA true SG10201602251QA (en) 2016-10-28

Family

ID=56976250

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201602251QA SG10201602251QA (en) 2015-03-23 2016-03-22 Power Supply System, Plasma Processing Apparatus And Power Supply Control Method

Country Status (6)

Country Link
US (1) US10056230B2 (zh)
JP (1) JP6424120B2 (zh)
KR (1) KR102283193B1 (zh)
CN (1) CN105990088B (zh)
SG (1) SG10201602251QA (zh)
TW (1) TWI700018B (zh)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6491888B2 (ja) * 2015-01-19 2019-03-27 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
US11227745B2 (en) * 2018-08-10 2022-01-18 Eagle Harbor Technologies, Inc. Plasma sheath control for RF plasma reactors
WO2018008310A1 (ja) * 2016-07-08 2018-01-11 パナソニックＩｐマネジメント株式会社 プラズマ放電装置及び空気清浄機
JP7158131B2 (ja) * 2017-05-30 2022-10-21 東京エレクトロン株式会社 ステージ及びプラズマ処理装置
US10510575B2 (en) * 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
WO2019096564A1 (en) * 2017-11-17 2019-05-23 Evatec Ag Rf power delivery to vacuum plasma processing
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
JP7306886B2 (ja) * 2018-07-30 2023-07-11 東京エレクトロン株式会社 制御方法及びプラズマ処理装置
JP7101096B2 (ja) * 2018-10-12 2022-07-14 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
CN111383895B (zh) * 2018-12-29 2022-04-08 江苏鲁汶仪器有限公司 一种等离子体刻蚀设备及其鞘层电压的测量方法
KR20210107716A (ko) 2019-01-22 2021-09-01 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
JP6960421B2 (ja) * 2019-01-23 2021-11-05 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
CN111916327B (zh) * 2019-05-10 2023-04-28 中微半导体设备(上海)股份有限公司 多频率多阶段的等离子体射频输出的方法及其装置
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03241649A (ja) * 1990-02-17 1991-10-28 Minoru Sugawara プラズマ発生装置
US6174450B1 (en) 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
JP2002324783A (ja) * 2001-04-25 2002-11-08 Toshiba Corp 異常放電検出方法
JP3946467B2 (ja) * 2001-07-10 2007-07-18 松下電器産業株式会社 ドライエッチング方法
US7541283B2 (en) 2002-08-30 2009-06-02 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
US7838430B2 (en) * 2003-10-28 2010-11-23 Applied Materials, Inc. Plasma control using dual cathode frequency mixing
CN102256432B (zh) * 2004-06-21 2014-10-29 东京毅力科创株式会社 等离子体处理装置和方法
US7951262B2 (en) 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
US7740737B2 (en) 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
US7692916B2 (en) 2005-03-31 2010-04-06 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method
JP4704087B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US9536711B2 (en) * 2007-03-30 2017-01-03 Lam Research Corporation Method and apparatus for DC voltage control on RF-powered electrode
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
JP5466480B2 (ja) * 2009-02-20 2014-04-09 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置および記憶媒体
US8383001B2 (en) 2009-02-20 2013-02-26 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and storage medium
US8414736B2 (en) * 2009-09-03 2013-04-09 Applied Materials, Inc. Plasma reactor with tiltable overhead RF inductive source
JP5571996B2 (ja) * 2010-03-31 2014-08-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR20120022251A (ko) * 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
JP5405504B2 (ja) 2011-01-31 2014-02-05 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP2013143432A (ja) * 2012-01-10 2013-07-22 Tokyo Electron Ltd プラズマ処理装置
JP5922218B2 (ja) * 2012-02-20 2016-05-24 東京エレクトロン株式会社 電源システム及びプラズマ処理装置
JP5921964B2 (ja) * 2012-06-11 2016-05-24 東京エレクトロン株式会社 プラズマ処理装置及びプローブ装置
JP6002556B2 (ja) * 2012-11-27 2016-10-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
KR102168064B1 (ko) 2013-02-20 2020-10-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
JP6180799B2 (ja) * 2013-06-06 2017-08-16 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
TW201707520A (zh) 2017-02-16
CN105990088A (zh) 2016-10-05
US20160284514A1 (en) 2016-09-29
TWI700018B (zh) 2020-07-21
JP2016181343A (ja) 2016-10-13
US10056230B2 (en) 2018-08-21
KR20160113983A (ko) 2016-10-04
CN105990088B (zh) 2018-08-28
JP6424120B2 (ja) 2018-11-14
KR102283193B1 (ko) 2021-07-29

Similar Documents

Publication Publication Date Title
SG10201602251QA (en) Power Supply System, Plasma Processing Apparatus And Power Supply Control Method
HK1257811A1 (zh) 方法、系統及裝置
PT3286814T (pt) Sistemas, métodos e aparelhos para um melhor controlo de geração de sistemas de energia de microrrede
HK1213083A1 (zh) 歌處理方法、裝置以及 歌處理系統
EP3146518A4 (en) Processing apparatus, processing system, processing program, and processing method
EP3288152A4 (en) Network-based wireless power control method and wireless power control apparatus and system
EP3133713A4 (en) Control apparatus, control system, control method, and program
EP3249863A4 (en) Access control apparatus, system and method
GB2528911B (en) Power system, apparatus and method
EP3107187A4 (en) Power reception apparatus, power reception control method, non-contact power supply system, and electronic apparatus
EP3098895A4 (en) Power supply control system, power supply control apparatus, and power supply control method
EP3291441A4 (en) Power supply system and power supply method
EP3370334A4 (en) POWER CONTROL DEVICE, CONTROL METHOD FOR A POWER CONTROL DEVICE, POWER CONTROL SYSTEM AND CONTROL PROCESS FOR A POWER CONTROL SYSTEM
SG10201605019VA (en) Gas Supply System, Gas Supply Control Method And GasReplacement Method
EP3306770A4 (en) Method and apparatus for controlling power supply
GB2541293B (en) Method and apparatus for controlling group affiliation
EP3439132A4 (en) POWER SUPPLY SYSTEM, CONTROL SYSTEM AND POWER SUPPLY METHOD FOR POWER SUPPLY SYSTEM
EP3309947A4 (en) POWER TRANSMISSION APPARATUS AND ITS CONTROL METHOD, AND POWER SUPPLY SYSTEM
SG11201709484RA (en) Message processing method, apparatus and system
HK1251160A1 (zh) 用於放射治療的方法、裝置和系統
GB201508956D0 (en) Control apparatus and method
EP3168807A4 (en) Power supply control apparatus, power supply control system, and program
GB2551089B (en) Charging apparatus, system and method
EP3270487A4 (en) Non-contact power supply apparatus, program, method for controlling non-contact power supply apparatus, and non-contact power transmission system
EP3299223A4 (en) Power supply system control device and power supply system control method