SG10201600487WA - Photoresist stripping solution, stripping solution recycling system and operating method, and method for recycling stripping solution - Google Patents

Photoresist stripping solution, stripping solution recycling system and operating method, and method for recycling stripping solution

Info

Publication number
SG10201600487WA
SG10201600487WA SG10201600487WA SG10201600487WA SG10201600487WA SG 10201600487W A SG10201600487W A SG 10201600487WA SG 10201600487W A SG10201600487W A SG 10201600487WA SG 10201600487W A SG10201600487W A SG 10201600487WA SG 10201600487W A SG10201600487W A SG 10201600487WA
Authority
SG
Singapore
Prior art keywords
stripping solution
recycling
photoresist
operating method
recycling system
Prior art date
Application number
SG10201600487WA
Other languages
English (en)
Inventor
Shinichirou Fuchigami
Norio Yamaguchi
Masahiko Aikou
Koji Shimizu
Hiroyoshi Takezawa
Original Assignee
Panasonic Ip Man Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2011114207A external-priority patent/JP5809444B2/ja
Priority claimed from JP2011114208A external-priority patent/JP5712051B2/ja
Application filed by Panasonic Ip Man Co Ltd filed Critical Panasonic Ip Man Co Ltd
Publication of SG10201600487WA publication Critical patent/SG10201600487WA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • H01L21/31133Etching organic layers by chemical means

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
SG10201600487WA 2011-05-20 2011-10-06 Photoresist stripping solution, stripping solution recycling system and operating method, and method for recycling stripping solution SG10201600487WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011114207A JP5809444B2 (ja) 2011-05-20 2011-05-20 フォトレジスト用剥離液
JP2011114208A JP5712051B2 (ja) 2011-05-20 2011-05-20 剥離液リサイクルシステムと運転方法および剥離液のリサイクル方法

Publications (1)

Publication Number Publication Date
SG10201600487WA true SG10201600487WA (en) 2016-02-26

Family

ID=47216819

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2013075213A SG194145A1 (en) 2011-05-20 2011-10-06 Photoresist stripping solution, stripping solution recycling system and operating method, and method for recycling stripping solution
SG10201600487WA SG10201600487WA (en) 2011-05-20 2011-10-06 Photoresist stripping solution, stripping solution recycling system and operating method, and method for recycling stripping solution

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2013075213A SG194145A1 (en) 2011-05-20 2011-10-06 Photoresist stripping solution, stripping solution recycling system and operating method, and method for recycling stripping solution

Country Status (6)

Country Link
US (1) US20140083458A1 (ko)
KR (1) KR20140030185A (ko)
CN (1) CN103688222B (ko)
SG (2) SG194145A1 (ko)
TW (1) TWI495967B (ko)
WO (1) WO2012160721A1 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6098790B2 (ja) * 2012-10-11 2017-03-22 パナソニックIpマネジメント株式会社 レジスト剥離液の調合方法および調合装置
US8961744B2 (en) * 2013-02-25 2015-02-24 Korex Corporation System and method for recycling high-boiling-point waste photoresist stripper
EP2819162B1 (en) * 2013-06-24 2020-06-17 IMEC vzw Method for producing contact areas on a semiconductor substrate
JP5575318B1 (ja) * 2013-09-02 2014-08-20 パナソニック株式会社 レジスト剥離液
JP6249217B2 (ja) * 2013-12-27 2017-12-20 パナソニックIpマネジメント株式会社 レジスト剥離液の組成比維持装置およびレジスト剥離液の組成比維持方法
WO2016027986A1 (ko) * 2014-08-20 2016-02-25 주식회사 엘지화학 포토레지스트용 스트리퍼 폐액의 재생 방법
JP6456176B2 (ja) * 2015-02-10 2019-01-23 東京応化工業株式会社 厚膜用化学増幅型ポジ型感光性樹脂組成物
EP3210945B1 (en) * 2016-02-29 2019-04-10 Agfa-Gevaert Method of manufacturing an etched glass article
JP6681066B2 (ja) * 2016-03-14 2020-04-15 株式会社平間理化研究所 水系レジスト剥離液の調製装置および非水系レジスト剥離液の調製装置
JP7191831B2 (ja) * 2017-08-02 2022-12-19 株式会社クラレ 回収レジスト剥離剤からのジメチルスルホキシドの回収方法
CN108054119B (zh) * 2017-12-06 2021-03-23 深圳市华星光电半导体显示技术有限公司 用于剥离工艺的剥离液机台及其工作方法
CN108470693B (zh) * 2018-03-15 2019-03-01 福建省福联集成电路有限公司 一种蚀刻装置控制方法和系统
CN110981054A (zh) * 2018-11-23 2020-04-10 叶旖婷 一种可降低cod污染的线路板褪膜废液处理方法及装置
CN110384995A (zh) * 2019-07-24 2019-10-29 中国电子工程设计院有限公司 一种高沸点有机物废气处理设备及其处理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW451358B (en) * 1998-11-27 2001-08-21 Showa Denko Kk Composition for removing sidewall residue and method of removing sidewall residue
JP3914722B2 (ja) * 2001-06-25 2007-05-16 株式会社平間理化研究所 水系レジスト剥離液管理装置及び水系レジスト剥離液管理方法
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
JP2006106616A (ja) * 2004-10-08 2006-04-20 Tokyo Ohka Kogyo Co Ltd ホトレジスト除去用処理液および基板の処理方法
KR101285775B1 (ko) * 2006-02-07 2013-07-18 주식회사 동진쎄미켐 레지스트 처리액의 재생방법 및 그 장치
WO2009004988A1 (ja) * 2007-07-03 2009-01-08 Toagosei Co., Ltd. ナノろ過によるレジスト剥離液連続使用システム
CN102227687A (zh) * 2008-12-25 2011-10-26 长瀬化成株式会社 光致抗蚀剂剥离剂组合物、层积金属布线基板的光致抗蚀剂剥离方法和制造方法
WO2010090146A1 (ja) * 2009-02-03 2010-08-12 出光興産株式会社 レジスト剥離剤組成物及びそれを用いたレジスト剥離方法
CN102124414B (zh) * 2009-04-17 2014-04-02 长瀬化成株式会社 光致抗蚀剂剥离剂组合物以及光致抗蚀剂剥离方法

Also Published As

Publication number Publication date
WO2012160721A1 (ja) 2012-11-29
CN103688222B (zh) 2016-11-16
TWI495967B (zh) 2015-08-11
SG194145A1 (en) 2013-11-29
CN103688222A (zh) 2014-03-26
US20140083458A1 (en) 2014-03-27
KR20140030185A (ko) 2014-03-11
TW201308031A (zh) 2013-02-16

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