SE9900526L - - Google Patents

Info

Publication number
SE9900526L
SE9900526L SE9900526A SE9900526A SE9900526L SE 9900526 L SE9900526 L SE 9900526L SE 9900526 A SE9900526 A SE 9900526A SE 9900526 A SE9900526 A SE 9900526A SE 9900526 L SE9900526 L SE 9900526L
Authority
SE
Sweden
Application number
SE9900526A
Other versions
SE9900526A0 (sv
SE9900526D0 (sv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication of SE9900526L publication Critical patent/SE9900526L/xx
Application filed filed Critical
Publication of SE9900526D0 publication Critical patent/SE9900526D0/xx
Publication of SE9900526A0 publication Critical patent/SE9900526A0/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H01L27/0255—
SE9900526A 1998-02-21 1999-02-17 Skyddssystem vid elektrostatiska urladdningar med låg läckning SE9900526A0 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9803583A GB2334633B (en) 1998-02-21 1998-02-21 Low leakage electrostatic discharge protection system

Publications (3)

Publication Number Publication Date
SE9900526L true SE9900526L (cg-RX-API-DMAC7.html)
SE9900526D0 SE9900526D0 (sv) 1999-02-17
SE9900526A0 SE9900526A0 (sv) 1999-08-22

Family

ID=10827303

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9900526A SE9900526A0 (sv) 1998-02-21 1999-02-17 Skyddssystem vid elektrostatiska urladdningar med låg läckning

Country Status (6)

Country Link
US (1) US6414831B1 (cg-RX-API-DMAC7.html)
CA (1) CA2261992A1 (cg-RX-API-DMAC7.html)
DE (1) DE19906857A1 (cg-RX-API-DMAC7.html)
FR (1) FR2775392B1 (cg-RX-API-DMAC7.html)
GB (1) GB2334633B (cg-RX-API-DMAC7.html)
SE (1) SE9900526A0 (cg-RX-API-DMAC7.html)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW463362B (en) * 1999-01-19 2001-11-11 Seiko Epson Corp Electrostatic protection circuit and semiconductor integrated circuit using the same
JP2002305254A (ja) * 2001-04-05 2002-10-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6794719B2 (en) * 2001-06-28 2004-09-21 Koninklijke Philips Electronics N.V. HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggedness
TWI253163B (en) * 2003-06-27 2006-04-11 Realtek Semiconductor Corp Electrostatic discharge protection circuit
KR100605580B1 (ko) * 2003-12-29 2006-07-28 주식회사 하이닉스반도체 정전기 보호회로
US7649726B2 (en) * 2004-08-16 2010-01-19 National Instruments Corporation Protection circuit for general-purpose digital I/O lines
TWI271847B (en) * 2004-12-08 2007-01-21 Au Optronics Corp Electrostatic discharge protection circuit and method of electrostatic discharge protection
CN100414801C (zh) * 2004-12-10 2008-08-27 上海宏力半导体制造有限公司 静电放电保护装置
US20060132996A1 (en) * 2004-12-17 2006-06-22 Poulton John W Low-capacitance electro-static discharge protection
JP2007234718A (ja) * 2006-02-28 2007-09-13 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US20080137243A1 (en) * 2006-12-07 2008-06-12 System General Corp. Esd protection circuit for an integrated circuit with a negative voltage input terminal
US7777998B2 (en) * 2007-09-10 2010-08-17 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
EP2919262B1 (en) * 2014-03-14 2022-12-21 EM Microelectronic-Marin SA Fault detection assembly
CN105896954B (zh) * 2016-05-24 2019-06-07 深圳市鑫宇鹏电子科技有限公司 一种自适应抗静电增强的智能功率模块
JP2017216325A (ja) * 2016-05-31 2017-12-07 ルネサスエレクトロニクス株式会社 半導体装置
CN112447676A (zh) * 2019-09-03 2021-03-05 长鑫存储技术有限公司 静电保护电路
US11658480B2 (en) 2020-10-13 2023-05-23 Globalfoundries U.S. Inc. Ultra-low leakage electrostatic discharge device with controllable trigger voltage

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1789063A1 (de) * 1968-09-30 1971-12-30 Siemens Ag Traeger fuer Halbleiterbauelemente
US3909119A (en) * 1974-02-06 1975-09-30 Westinghouse Electric Corp Guarded planar PN junction semiconductor device
US4536469A (en) * 1981-11-23 1985-08-20 Raytheon Company Semiconductor structures and manufacturing methods
US4590664A (en) * 1983-07-29 1986-05-27 Harris Corporation Method of fabricating low noise reference diodes and transistors
US4736271A (en) * 1987-06-23 1988-04-05 Signetics Corporation Protection device utilizing one or more subsurface diodes and associated method of manufacture
JP2569634B2 (ja) * 1987-11-26 1997-01-08 日本電気株式会社 接合破壊型半導体記憶装置
JPH01198071A (ja) * 1988-02-03 1989-08-09 Mitsubishi Electric Corp クリップダイオード内蔵形トランジスタ
US5189588A (en) * 1989-03-15 1993-02-23 Matsushita Electric Industrial Co., Ltd. Surge protection apparatus
EP0568341A2 (en) * 1992-04-30 1993-11-03 Texas Instruments Incorporated Electrostatic discharge protection structure
EP0606667A1 (en) * 1993-01-13 1994-07-20 Koninklijke Philips Electronics N.V. Semiconductor device with an integrated circuit provided with over voltage protection means
FR2708788B1 (fr) * 1993-08-06 1995-10-27 Sgs Thomson Microelectronics Protection d'un circuit intégré à l'encontre de surcharges électrostatiques.
JPH07106555A (ja) * 1993-10-01 1995-04-21 Mitsubishi Electric Corp 入力保護回路
CA2115230A1 (en) * 1994-02-08 1995-08-09 Jonathan H. Orchard-Webb Esd protection circuit
US5440162A (en) * 1994-07-26 1995-08-08 Rockwell International Corporation ESD protection for submicron CMOS circuits
US5610790A (en) * 1995-01-20 1997-03-11 Xilinx, Inc. Method and structure for providing ESD protection for silicon on insulator integrated circuits
KR0154702B1 (ko) * 1995-06-09 1998-10-15 김광호 항복전압을 향상시킨 다이오드 제조 방법
US6020222A (en) * 1997-12-16 2000-02-01 Advanced Micro Devices, Inc. Silicon oxide insulator (SOI) semiconductor having selectively linked body

Also Published As

Publication number Publication date
FR2775392B1 (fr) 2001-12-14
GB2334633A (en) 1999-08-25
CA2261992A1 (en) 1999-08-21
DE19906857A1 (de) 1999-09-02
GB9803583D0 (en) 1998-04-15
GB2334633B (en) 2002-09-25
FR2775392A1 (fr) 1999-08-27
US6414831B1 (en) 2002-07-02
SE9900526A0 (sv) 1999-08-22
SE9900526D0 (sv) 1999-02-17

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