SE8405980L - SEMICONDUCTOR DEVICE INCLUDING AN ELECTROLUMINISCENT DIOD AND PROCEDURE FOR PRODUCING ITS SAME - Google Patents

SEMICONDUCTOR DEVICE INCLUDING AN ELECTROLUMINISCENT DIOD AND PROCEDURE FOR PRODUCING ITS SAME

Info

Publication number
SE8405980L
SE8405980L SE8405980A SE8405980A SE8405980L SE 8405980 L SE8405980 L SE 8405980L SE 8405980 A SE8405980 A SE 8405980A SE 8405980 A SE8405980 A SE 8405980A SE 8405980 L SE8405980 L SE 8405980L
Authority
SE
Sweden
Prior art keywords
semiconductor device
electroluminiscent
diod
procedure
producing
Prior art date
Application number
SE8405980A
Other languages
Swedish (sv)
Other versions
SE8405980D0 (en
SE460003B (en
Inventor
J J Varon
M-J Martin
M Mahieu
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE8405980D0 publication Critical patent/SE8405980D0/en
Publication of SE8405980L publication Critical patent/SE8405980L/en
Publication of SE460003B publication Critical patent/SE460003B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities

Abstract

A semiconductor device includes an electroluminescent diode, which is obtained from at least one epitaxial layer of a III-V compound vapor-deposited on a substrate which is also of a III-V compound. The invention is characterized in that, preferably before the epitaxial layer is vapor deposited, a layer having a disturbed crystal structure is provided at the surface of the substrate, as a result of which the substrate does not generate radiation.
SE8405980A 1983-11-30 1984-11-27 ELECTROLUMINISCENT DIOD WITH A SMALL SPECTRAL AREA AND PROCEDURE FOR ITS PREPARATION SE460003B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8319109A FR2555811B1 (en) 1983-11-30 1983-11-30 METHOD FOR PRODUCING LOW SPECTRAL WIDTH LIGHT EMITTING DIODES, AND DIODES OBTAINED BY THIS PROCESS

Publications (3)

Publication Number Publication Date
SE8405980D0 SE8405980D0 (en) 1984-11-27
SE8405980L true SE8405980L (en) 1985-05-31
SE460003B SE460003B (en) 1989-08-28

Family

ID=9294685

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8405980A SE460003B (en) 1983-11-30 1984-11-27 ELECTROLUMINISCENT DIOD WITH A SMALL SPECTRAL AREA AND PROCEDURE FOR ITS PREPARATION

Country Status (7)

Country Link
US (1) US4646116A (en)
JP (1) JPS60134487A (en)
DE (1) DE3441709A1 (en)
FR (1) FR2555811B1 (en)
GB (1) GB2150752B (en)
NL (1) NL188487C (en)
SE (1) SE460003B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04258182A (en) * 1991-02-12 1992-09-14 Mitsubishi Electric Corp Semiconductor light emitting device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5037995B1 (en) * 1969-05-28 1975-12-06
FR2175571B1 (en) * 1972-03-14 1978-08-25 Radiotechnique Compelec
CA1015051A (en) * 1973-02-26 1977-08-02 Kunio Itoh Double heterostructure laser
US3962716A (en) * 1973-11-12 1976-06-08 Bell Telephone Laboratories, Incorporated Reduction of dislocations in multilayer structures of zinc-blend materials
FR2315173A1 (en) * 1975-06-19 1977-01-14 Akimov Jury Semiconductor matrix of photoemitter elements prodn. - by ion implantation of zinc in gallium arsenide structure and diffusion tempering
FR2371780A1 (en) * 1976-11-22 1978-06-16 Mitsubishi Monsanto Chem ELECTROLUMINESCENT ELEMENT AND ITS MANUFACTURING PROCESS
JPS55132034A (en) * 1979-03-31 1980-10-14 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor thin film
JPS55132036A (en) * 1979-04-02 1980-10-14 Nippon Telegr & Teleph Corp <Ntt> Adding method for impurity to semiconductor
US4354140A (en) * 1979-05-28 1982-10-12 Zaidan Hojin Handotai Kenkyu Shinkokai Light-emitting semiconductor
GB2070859B (en) * 1980-02-07 1984-03-21 Stanley Electric Co Ltd Hetero-junction light-emitting diode
CA1165851A (en) * 1980-06-16 1984-04-17 Subhash Mahajan Epitaxial devices having reduced dislocation count
CA1208752A (en) * 1981-09-30 1986-07-29 Michael Ettenberg Semiconductor body and long-lived light emitting device thereon

Also Published As

Publication number Publication date
GB2150752B (en) 1987-11-25
FR2555811A1 (en) 1985-05-31
JPS60134487A (en) 1985-07-17
NL188487B (en) 1992-02-03
FR2555811B1 (en) 1986-09-05
GB2150752A (en) 1985-07-03
US4646116A (en) 1987-02-24
DE3441709A1 (en) 1985-06-05
NL8403594A (en) 1985-06-17
SE8405980D0 (en) 1984-11-27
JPH0577194B2 (en) 1993-10-26
NL188487C (en) 1992-07-01
SE460003B (en) 1989-08-28
GB8429800D0 (en) 1985-01-03

Similar Documents

Publication Publication Date Title
IT1091351B (en) PROCEDURE FOR FORMING AN EPITAXIAL LAYER ON THE SURFACE OF A SUBSTRATE, PARTICULARLY FOR SEMICONDUCTORS
KR910008872A (en) Semiconductor device and manufacturing method
ES2109231T3 (en) LASER ELEMENTS OF SEMI-CONDUCTORS AND MANUFACTURING METHOD.
KR970054585A (en) Nitride group III-V compound semiconductor device and its manufacturing method
ATE229231T1 (en) METHOD FOR PRODUCING A SEMICONDUCTOR ARRANGEMENT HAVING A CONDUCTIVE LAYER
JPS5226182A (en) Manufacturing method of semi-conductor unit
CA1268846C (en) Semiconductor laser with mesa structure
DE3785126D1 (en) IMPATT DIODE.
SE8007199L (en) Zener diode
GB1118757A (en) Method of depositing silicon nitride films
GB1465830A (en) Reducing boundary charges in semiconductor layers grown on a substrate
SE7709678L (en) WAY TO MANUFACTURE A SEMICONDUCTOR DEVICE
DE69308976T2 (en) Spin-polarized electron source with optoelectronic semiconductor layer with split valence band
FR2390017B1 (en)
GB1501483A (en) Semiconductor device
SE8405980D0 (en) SEMICONDUCTOR DEVICE INCLUDING AN ELECTROLUMINISCENT DIOD AND PROCEDURE FOR PRODUCING ITS SAME
GB2163900B (en) Semiconductor device
JPS6453582A (en) Variable capacitance diode device
US3535469A (en) Masked electroluminescent diode and film recording device utilizing the same
EP0631299A4 (en) Semiconductor expitaxial substrate.
JPS57128092A (en) Imbedded type semiconductor laser device
AU565081B2 (en) Semiconductor device producing or amplifying radiation
JPS54591A (en) Element isolating method
IT8447979A1 (en) Process for epitaxial deposition of semiconductor layers.
JPS6450556A (en) Semiconductor integrated circuit device

Legal Events

Date Code Title Description
NAL Patent in force

Ref document number: 8405980-7

Format of ref document f/p: F

NUG Patent has lapsed

Ref document number: 8405980-7

Format of ref document f/p: F