FR2315173A1 - Semiconductor matrix of photoemitter elements prodn. - by ion implantation of zinc in gallium arsenide structure and diffusion tempering - Google Patents

Semiconductor matrix of photoemitter elements prodn. - by ion implantation of zinc in gallium arsenide structure and diffusion tempering

Info

Publication number
FR2315173A1
FR2315173A1 FR7519224A FR7519224A FR2315173A1 FR 2315173 A1 FR2315173 A1 FR 2315173A1 FR 7519224 A FR7519224 A FR 7519224A FR 7519224 A FR7519224 A FR 7519224A FR 2315173 A1 FR2315173 A1 FR 2315173A1
Authority
FR
France
Prior art keywords
layer
prodn
ion implantation
tempering
zinc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7519224A
Other languages
French (fr)
Other versions
FR2315173B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AKIMOV JURY
Original Assignee
AKIMOV JURY
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AKIMOV JURY filed Critical AKIMOV JURY
Priority to FR7519224A priority Critical patent/FR2315173A1/en
Publication of FR2315173A1 publication Critical patent/FR2315173A1/en
Application granted granted Critical
Publication of FR2315173B1 publication Critical patent/FR2315173B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

In the prodn. of a semiconductor matrix of photoemitter elements based on an epitaxial structure of a p+ - GaAs substrate with cons4cutive p-Ga1-xAlxAs- and n-Ga1-yAly-As- layers forming a photoemitting pn-junction, by producing a mask in the n-layer, introducing an acceptor through the former into the n-layer and diffusion tempering for a time and at a temp. sufficient to produce p-zones in the n layer having an penetration depth at least equal to the thickness of the n-layer, the mask is produced by applying a photoresist coating to the n-layer, followed by exposure and etching, and the acceptor is introduced by ion implantation and, before diffusion tempering, the photoresist coating is removed and a SiO2 coating is applied to the n-layer. The process extends the useful range of the matrix and is also more economical. It is not necessary to use a dielectric Al2O3 coating, introduction of Zn and diffusion tempering in an ampoule. Photoemitter elements with linear dimensions of under 70-100 mu m can be produced.
FR7519224A 1975-06-19 1975-06-19 Semiconductor matrix of photoemitter elements prodn. - by ion implantation of zinc in gallium arsenide structure and diffusion tempering Granted FR2315173A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7519224A FR2315173A1 (en) 1975-06-19 1975-06-19 Semiconductor matrix of photoemitter elements prodn. - by ion implantation of zinc in gallium arsenide structure and diffusion tempering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7519224A FR2315173A1 (en) 1975-06-19 1975-06-19 Semiconductor matrix of photoemitter elements prodn. - by ion implantation of zinc in gallium arsenide structure and diffusion tempering

Publications (2)

Publication Number Publication Date
FR2315173A1 true FR2315173A1 (en) 1977-01-14
FR2315173B1 FR2315173B1 (en) 1980-06-27

Family

ID=9156758

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7519224A Granted FR2315173A1 (en) 1975-06-19 1975-06-19 Semiconductor matrix of photoemitter elements prodn. - by ion implantation of zinc in gallium arsenide structure and diffusion tempering

Country Status (1)

Country Link
FR (1) FR2315173A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555811A1 (en) * 1983-11-30 1985-05-31 Radiotechnique Compelec METHOD FOR PRODUCING LIGHT-EMITTING DIODES WITH LOW SPECTRAL WIDTH, AND DIODES OBTAINED THEREBY

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555811A1 (en) * 1983-11-30 1985-05-31 Radiotechnique Compelec METHOD FOR PRODUCING LIGHT-EMITTING DIODES WITH LOW SPECTRAL WIDTH, AND DIODES OBTAINED THEREBY

Also Published As

Publication number Publication date
FR2315173B1 (en) 1980-06-27

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