SE7712251L - Tyristoranordning - Google Patents
TyristoranordningInfo
- Publication number
- SE7712251L SE7712251L SE7712251A SE7712251A SE7712251L SE 7712251 L SE7712251 L SE 7712251L SE 7712251 A SE7712251 A SE 7712251A SE 7712251 A SE7712251 A SE 7712251A SE 7712251 L SE7712251 L SE 7712251L
- Authority
- SE
- Sweden
- Prior art keywords
- thyristor
- thyristor device
- beveling
- junctions
- curvature
- Prior art date
Links
- 230000015556 catabolic process Effects 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/737,492 US4079403A (en) | 1976-11-01 | 1976-11-01 | Thyristor device with self-protection against breakover turn-on failure |
Publications (1)
Publication Number | Publication Date |
---|---|
SE7712251L true SE7712251L (sv) | 1978-05-02 |
Family
ID=24964143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7712251A SE7712251L (sv) | 1976-11-01 | 1977-10-31 | Tyristoranordning |
Country Status (5)
Country | Link |
---|---|
US (1) | US4079403A (de) |
JP (1) | JPS5380982A (de) |
CA (1) | CA1080857A (de) |
DE (1) | DE2747668A1 (de) |
SE (1) | SE7712251L (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5478092A (en) * | 1977-12-05 | 1979-06-21 | Hitachi Ltd | Lateral semiconductor device |
CH633907A5 (de) * | 1978-10-10 | 1982-12-31 | Bbc Brown Boveri & Cie | Leistungshalbleiterbauelement mit zonen-guard-ringen. |
JPS55133569A (en) * | 1979-04-06 | 1980-10-17 | Hitachi Ltd | Semiconductor device |
JPS594075A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | サイリスタ |
US4577208A (en) * | 1982-09-23 | 1986-03-18 | Eaton Corporation | Bidirectional power FET with integral avalanche protection |
US4555845A (en) * | 1982-10-13 | 1985-12-03 | Westinghouse Electric Corp. | Temperature stable self-protected thyristor and method of producing |
DE3465222D1 (en) * | 1983-05-26 | 1987-09-10 | Gen Electric | Voltage breakover protected thyristor having field-containing layer in avalanche voltage breakover zone |
EP0360036B1 (de) * | 1988-09-20 | 1994-06-01 | Siemens Aktiengesellschaft | Planarer pn-Übergang hoher Spannungsfestigkeit |
JPH02291171A (ja) * | 1989-03-14 | 1990-11-30 | Siemens Ag | ゲートターンオフサイリスタおよびその製造方法 |
US5500377A (en) * | 1994-09-06 | 1996-03-19 | Motorola, Inc. | Method of making surge suppressor switching device |
DE10250608B4 (de) * | 2002-10-30 | 2005-09-29 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Thyristorbauelement mit verbessertem Sperrverhalten in Rückwärtsrichtung |
DE10250609B4 (de) * | 2002-10-30 | 2005-12-29 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Thyristorbauelement mit verbessertem Sperrverhalten in Rückwärtsrichtung |
GB2497245B (en) | 2010-09-27 | 2015-04-01 | Abb Technology Ag | Bipolar non-punch-through power semiconductor device |
CN105703481B (zh) * | 2016-03-03 | 2018-03-30 | 南京南瑞继保电气有限公司 | 一种换流阀均压状态一致性统计方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1112301A (en) * | 1964-07-27 | 1968-05-01 | Gen Electric | Controlled rectifier with improved turn-on and turn-off characteristics |
US3562610A (en) * | 1967-05-25 | 1971-02-09 | Westinghouse Electric Corp | Controlled rectifier with improved switching characteristics |
US3566212A (en) * | 1969-02-24 | 1971-02-23 | Trw Semiconductors Inc | High temperature semiconductor package |
BE787597A (fr) * | 1971-08-16 | 1973-02-16 | Siemens Ag | Thyristor |
DE2141627C3 (de) * | 1971-08-19 | 1979-06-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
JPS4989488A (de) * | 1972-12-26 | 1974-08-27 | ||
JPS529980B2 (de) * | 1974-05-17 | 1977-03-19 |
-
1976
- 1976-11-01 US US05/737,492 patent/US4079403A/en not_active Expired - Lifetime
-
1977
- 1977-10-21 CA CA289,223A patent/CA1080857A/en not_active Expired
- 1977-10-25 DE DE19772747668 patent/DE2747668A1/de active Pending
- 1977-10-31 SE SE7712251A patent/SE7712251L/xx not_active Application Discontinuation
- 1977-11-01 JP JP13137677A patent/JPS5380982A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5380982A (en) | 1978-07-17 |
US4079403A (en) | 1978-03-14 |
DE2747668A1 (de) | 1978-06-29 |
JPS6122474B2 (de) | 1986-05-31 |
CA1080857A (en) | 1980-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SE7712251L (sv) | Tyristoranordning | |
SE7704360L (sv) | Sjelvskyddad halvledaranordning | |
SE7900337L (sv) | Halvledaranordning | |
SE7906288L (sv) | Felteffekttransistor med isolerad styrelektrod | |
JPS5235586A (en) | Semiconductor device | |
SE8203432L (sv) | Tvapoligt overstromsskydd | |
JPS53138281A (en) | Insulated-gate field effect transistor | |
JPS5224465A (en) | Schottky barrier semiconductor device | |
JPS538572A (en) | Field effect type transistor | |
SE7705994L (sv) | Anordning vid tyristorer | |
SE7909252L (sv) | Med ljus tendbar tyristor | |
JPS55111171A (en) | Field-effect semiconductor device | |
JPS5376676A (en) | High breakdown voltage field effect power transistor | |
JPS5346288A (en) | Mis type semiconductor device | |
JPS5413275A (en) | Controlled rectifying element of semiconductor | |
JPS5289473A (en) | Transistor | |
JPS57180164A (en) | Semiconductor device | |
JPS5435684A (en) | Junction type field effect transistor | |
JPS5214382A (en) | Semiconductor device | |
SE391413B (sv) | Tyristor med hjelpemitter | |
JPS52104879A (en) | Manufacture of semiconductor device | |
GB1106637A (en) | Controllable semi-conductor device | |
JPS52144980A (en) | Sos semiconductor device | |
JPS5225583A (en) | Field effect transistor | |
JPS5353271A (en) | Manufacture for semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAV | Patent application has lapsed |
Ref document number: 7712251-3 |