SE7700374L - Sett coh anordning for framstellning av halvledarestrukturer - Google Patents

Sett coh anordning for framstellning av halvledarestrukturer

Info

Publication number
SE7700374L
SE7700374L SE7700374A SE7700374A SE7700374L SE 7700374 L SE7700374 L SE 7700374L SE 7700374 A SE7700374 A SE 7700374A SE 7700374 A SE7700374 A SE 7700374A SE 7700374 L SE7700374 L SE 7700374L
Authority
SE
Sweden
Prior art keywords
coh
manufacture
semiconductor structures
semiconductor
structures
Prior art date
Application number
SE7700374A
Other languages
English (en)
Swedish (sv)
Inventor
R Sacher
Original Assignee
Funkwerk Erfurt Kom Veb
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Funkwerk Erfurt Kom Veb filed Critical Funkwerk Erfurt Kom Veb
Publication of SE7700374L publication Critical patent/SE7700374L/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/40—Ion implantation into wafers, substrates or parts of devices into insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/30—Diffusion for doping of conductive or resistive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/262—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
SE7700374A 1976-02-04 1977-01-14 Sett coh anordning for framstellning av halvledarestrukturer SE7700374L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD76191181A DD136670A1 (de) 1976-02-04 1976-02-04 Verfahren und vorrichtung zur herstellung von halbleiterstrukturen

Publications (1)

Publication Number Publication Date
SE7700374L true SE7700374L (sv) 1977-08-05

Family

ID=5503510

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7700374A SE7700374L (sv) 1976-02-04 1977-01-14 Sett coh anordning for framstellning av halvledarestrukturer

Country Status (7)

Country Link
JP (1) JPS52155064A (cs)
CS (1) CS209199B1 (cs)
DD (1) DD136670A1 (cs)
DE (1) DE2701356A1 (cs)
FR (1) FR2340565A1 (cs)
GB (2) GB1597595A (cs)
SE (1) SE7700374L (cs)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4325182A (en) * 1980-08-25 1982-04-20 General Electric Company Fast isolation diffusion
GB2165692B (en) * 1984-08-25 1989-05-04 Ricoh Kk Manufacture of interconnection patterns
AT386297B (de) * 1985-09-11 1988-07-25 Ims Ionen Mikrofab Syst Ionenstrahlgeraet und verfahren zur ausfuehrung von aenderungen, insbes. reparaturen an substraten unter verwendung eines ionenstrahlgeraetes
AT393925B (de) * 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind
US5266409A (en) * 1989-04-28 1993-11-30 Digital Equipment Corporation Hydrogenated carbon compositions
US5281851A (en) * 1992-10-02 1994-01-25 Hewlett-Packard Company Integrated circuit packaging with reinforced leads

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3682729A (en) * 1969-12-30 1972-08-08 Ibm Method of changing the physical properties of a metallic film by ion beam formation and devices produced thereby
US3666548A (en) * 1970-01-06 1972-05-30 Ibm Monocrystalline semiconductor body having dielectrically isolated regions and method of forming
DE2115823C3 (de) * 1971-04-01 1975-09-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen von Mikrostrukturen auf einer Halbleiterscheibe
US3804738A (en) * 1973-06-29 1974-04-16 Ibm Partial planarization of electrically insulative films by resputtering
NL7413977A (nl) * 1974-10-25 1976-04-27 Philips Nv Aanbrengen van een geleiderlaagpatroon met op een geringe onderlinge afstand gelegen delen, in het bijzonder bij de vervaardiging van half- geleiderinrichtingen.
DE2554638A1 (de) * 1975-12-04 1977-06-16 Siemens Ag Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante

Also Published As

Publication number Publication date
DE2701356A1 (de) 1977-08-18
JPS52155064A (en) 1977-12-23
GB1597594A (en) 1981-09-09
GB1597595A (en) 1981-09-09
DD136670A1 (de) 1979-07-18
CS209199B1 (cs) 1981-11-30
FR2340565A1 (fr) 1977-09-02

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