SE7411422L - - Google Patents

Info

Publication number
SE7411422L
SE7411422L SE7411422A SE7411422A SE7411422L SE 7411422 L SE7411422 L SE 7411422L SE 7411422 A SE7411422 A SE 7411422A SE 7411422 A SE7411422 A SE 7411422A SE 7411422 L SE7411422 L SE 7411422L
Authority
SE
Sweden
Application number
SE7411422A
Other versions
SE408836B (sv
Inventor
C Chapron
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE7411422L publication Critical patent/SE7411422L/xx
Publication of SE408836B publication Critical patent/SE408836B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821Combination of lateral and vertical transistors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091Integrated injection logic or merged transistor logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computing Systems (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
SE7411422A 1973-09-13 1974-09-10 Integrerad krets innefattande ett flertal styrande och styrda transistorer SE408836B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7332916A FR2244262B1 (ja) 1973-09-13 1973-09-13

Publications (2)

Publication Number Publication Date
SE7411422L true SE7411422L (ja) 1975-03-14
SE408836B SE408836B (sv) 1979-07-09

Family

ID=9124977

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7411422A SE408836B (sv) 1973-09-13 1974-09-10 Integrerad krets innefattande ett flertal styrande och styrda transistorer

Country Status (11)

Country Link
US (1) US4007385A (ja)
JP (1) JPS5516455B2 (ja)
AT (1) AT349065B (ja)
CA (1) CA1004778A (ja)
CH (1) CH576190A5 (ja)
DE (1) DE2443171C2 (ja)
FR (1) FR2244262B1 (ja)
GB (1) GB1486907A (ja)
IT (1) IT1021265B (ja)
NL (1) NL7411913A (ja)
SE (1) SE408836B (ja)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2308206A2 (fr) * 1975-04-14 1976-11-12 Radiotechnique Compelec Circuit logique integre a injecteurs de courant
DE2616363C3 (de) * 1975-04-24 1981-07-16 Naamloze Vennootschap Philips' Gloeilampenfabrieken, Eindhoven Vorrichtung zur Lieferung eines konstanten Speisegleichstromes
DE2538910C3 (de) * 1975-09-02 1980-01-10 Philips Patentverwaltung Gmbh, 2000 Hamburg Schaltungsanordnung zur Erhöhung der Schaltgeschwindigkeit einer integrierten Schaltung
JPS5277568A (en) * 1975-12-24 1977-06-30 Hitachi Ltd Drive circuit
DE2624547A1 (de) * 1976-06-01 1977-12-15 Siemens Ag Verstaerkerstufe zur stromversorgung von i hoch 2 l-schaltungen
DE2624584A1 (de) * 1976-06-01 1977-12-15 Siemens Ag Anordnung zur versorgung von i hoch 2 l-schaltungen mit verschiedenen stroemen
NL7606193A (nl) * 1976-06-09 1977-12-13 Philips Nv Geintegreerde schakeling.
JPS5378135A (en) * 1976-12-22 1978-07-11 Fujitsu Ltd Semiconductor circuit
NL7614610A (nl) * 1976-12-31 1978-07-04 Philips Nv Inrichting voor het koppelen van in i2l techniek bedreven transistoren met een op hogere rust- stroom ingestelde transistor.
US4547766A (en) * 1977-04-07 1985-10-15 Analog Device, Incorporated A-To-D converter of the successive-approximation type
US4400689A (en) * 1977-04-07 1983-08-23 Analog Devices, Incorporated A-to-D Converter of the successive-approximation type
DE2804527C2 (de) * 1978-02-03 1986-12-18 Ernst Leitz Wetzlar Gmbh, 6330 Wetzlar Verfahren und Anordnung zum Abgleichen von Abbildungssystemen
GB2014387B (en) * 1978-02-14 1982-05-19 Motorola Inc Differential to single-ended converter utilizing inverted transistors
US4348600A (en) * 1978-02-14 1982-09-07 Motorola, Inc. Controlled current source for I2 L to analog interfaces
US4189909A (en) * 1978-05-22 1980-02-26 Texas Instruments Incorporated Integrated injection logic electronic system with voltage regulator for multiplexed liquid crystal display
US4400690A (en) * 1978-08-08 1983-08-23 Analog Devices, Incorporated A-to-D Converter of the successive-approximation type
DE2949201A1 (de) * 1979-12-06 1981-06-11 Siemens AG, 1000 Berlin und 8000 München Aus i (pfeil hoch)2(pfeil hoch) l-zellen und weiteren schaltungsteilen bestehende monolithisch integrierte halbleiterschaltung
US4357548A (en) * 1980-05-30 1982-11-02 Rca Corporation Circuit arrangement using emitter coupled logic and integrated injection logic
FR2491276A1 (fr) * 1980-09-26 1982-04-02 Trt Telecom Radio Electr Circuits d'interface entre couches de logique a injection empilees et polarisees a differentes tensions
JPS56129360A (en) * 1980-10-03 1981-10-09 Hitachi Ltd Semiconductor integrated circuit
JPS57104635U (ja) * 1981-11-12 1982-06-28
JPS58127363A (ja) * 1982-01-25 1983-07-29 Hitachi Ltd 半導体集積回路装置
US4792706A (en) * 1986-12-16 1988-12-20 Texas Instruments Incorporated ECL gates using diode-clamped loads and Schottky clamped reference bias
JPH01157121A (ja) * 1987-09-29 1989-06-20 Toshiba Corp 論理回路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2021824C3 (de) * 1970-05-05 1980-08-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Halbleiterschaltung
NL7107040A (ja) * 1971-05-22 1972-11-24
DE2212168C2 (de) * 1972-03-14 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung

Also Published As

Publication number Publication date
FR2244262A1 (ja) 1975-04-11
ATA737574A (de) 1978-08-15
GB1486907A (en) 1977-09-28
AT349065B (de) 1979-03-26
JPS5078268A (ja) 1975-06-26
NL7411913A (nl) 1975-03-17
US4007385A (en) 1977-02-08
FR2244262B1 (ja) 1978-09-29
SE408836B (sv) 1979-07-09
JPS5516455B2 (ja) 1980-05-02
AU7320374A (en) 1976-03-18
IT1021265B (it) 1978-01-30
DE2443171A1 (de) 1975-03-20
CH576190A5 (ja) 1976-05-31
CA1004778A (en) 1977-02-01
DE2443171C2 (de) 1983-08-18

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