SE7407321L - - Google Patents

Info

Publication number
SE7407321L
SE7407321L SE7407321A SE7407321A SE7407321L SE 7407321 L SE7407321 L SE 7407321L SE 7407321 A SE7407321 A SE 7407321A SE 7407321 A SE7407321 A SE 7407321A SE 7407321 L SE7407321 L SE 7407321L
Authority
SE
Sweden
Prior art keywords
single crystal
crystal silicon
silicon dioxide
structures
bonding
Prior art date
Application number
SE7407321A
Other languages
English (en)
Inventor
A J Yerman
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE7407321L publication Critical patent/SE7407321L/xx

Links

Classifications

    • H10P90/1906—
    • H10W10/061—
    • H10W10/181—
    • H10W74/43—
    • H10P90/1914—
    • H10W10/014—
    • H10W10/17—

Landscapes

  • Element Separation (AREA)
SE7407321A 1973-06-04 1974-06-04 SE7407321L (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US366380A US3909332A (en) 1973-06-04 1973-06-04 Bonding process for dielectric isolation of single crystal semiconductor structures

Publications (1)

Publication Number Publication Date
SE7407321L true SE7407321L (OSRAM) 1974-12-05

Family

ID=23442769

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7407321A SE7407321L (OSRAM) 1973-06-04 1974-06-04

Country Status (6)

Country Link
US (1) US3909332A (OSRAM)
JP (1) JPS5028986A (OSRAM)
DE (1) DE2425993A1 (OSRAM)
FR (1) FR2232080B3 (OSRAM)
NL (1) NL7407484A (OSRAM)
SE (1) SE7407321L (OSRAM)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4045200A (en) * 1975-01-02 1977-08-30 Owens-Illinois, Inc. Method of forming glass substrates with pre-attached sealing media
DE2842492C2 (de) * 1978-09-29 1986-04-17 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Herstellung einer aus einem Halbleiter-Glas-Verbundwerkstoff bestehenden Photokathode
JPS6083189U (ja) * 1983-11-15 1985-06-08 タキロン株式会社 二層窓
DE3436001A1 (de) * 1984-10-01 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Elektrostatisches glasloeten von halbleiterbauteilen
JPH0618234B2 (ja) * 1985-04-19 1994-03-09 日本電信電話株式会社 半導体基板の接合方法
NL8501773A (nl) * 1985-06-20 1987-01-16 Philips Nv Werkwijze voor het vervaardigen van halfgeleiderinrichtingen.
JP2559700B2 (ja) * 1986-03-18 1996-12-04 富士通株式会社 半導体装置の製造方法
US4905075A (en) * 1986-05-05 1990-02-27 General Electric Company Hermetic semiconductor enclosure
US5133795A (en) * 1986-11-04 1992-07-28 General Electric Company Method of making a silicon package for a power semiconductor device
US5086011A (en) * 1987-01-27 1992-02-04 Advanced Micro Devices, Inc. Process for producing thin single crystal silicon islands on insulator
US4792533A (en) * 1987-03-13 1988-12-20 Motorola Inc. Coplanar die to substrate bond method
US4828597A (en) * 1987-12-07 1989-05-09 General Electric Company Flexible glass fiber mat bonding method
US5034044A (en) * 1988-05-11 1991-07-23 General Electric Company Method of bonding a silicon package for a power semiconductor device
NL8902271A (nl) * 1989-09-12 1991-04-02 Philips Nv Werkwijze voor het verbinden van twee lichamen.
DE69233314T2 (de) * 1991-10-11 2005-03-24 Canon K.K. Verfahren zur Herstellung von Halbleiter-Produkten
JP3237888B2 (ja) * 1992-01-31 2001-12-10 キヤノン株式会社 半導体基体及びその作製方法
US5444014A (en) * 1994-12-16 1995-08-22 Electronics And Telecommunications Research Institute Method for fabricating semiconductor device
US5681775A (en) * 1995-11-15 1997-10-28 International Business Machines Corporation Soi fabrication process
JP3431454B2 (ja) * 1997-06-18 2003-07-28 株式会社東芝 半導体装置の製造方法
US6197663B1 (en) * 1999-12-07 2001-03-06 Lucent Technologies Inc. Process for fabricating integrated circuit devices having thin film transistors
US6563133B1 (en) * 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
JP2003209144A (ja) * 2002-01-16 2003-07-25 Seiko Epson Corp 半導体装置及びその製造方法、半導体装置の製造装置並びに電子機器
US20050067292A1 (en) * 2002-05-07 2005-03-31 Microfabrica Inc. Electrochemically fabricated structures having dielectric or active bases and methods of and apparatus for producing such structures
US20050142739A1 (en) * 2002-05-07 2005-06-30 Microfabrica Inc. Probe arrays and method for making
US20060108678A1 (en) 2002-05-07 2006-05-25 Microfabrica Inc. Probe arrays and method for making
WO2003095711A2 (en) * 2002-05-07 2003-11-20 Memgen Corporation Electrochemically fabricated structures having dielectric or active bases
US10416192B2 (en) 2003-02-04 2019-09-17 Microfabrica Inc. Cantilever microprobes for contacting electronic components
DE10320375B3 (de) * 2003-05-07 2004-12-16 Süss Micro Tec Laboratory Equipment GmbH Verfahren zum temporären Fixieren zweier flächiger Werksücke
DE10326893A1 (de) 2003-06-14 2004-12-30 Degussa Ag Harze auf Basis von Ketonen und Aldehyde mit verbesserten Löslichkeitseigenschaften und geringen Farbzahlen
US20080105355A1 (en) * 2003-12-31 2008-05-08 Microfabrica Inc. Probe Arrays and Method for Making
US9236369B2 (en) * 2013-07-18 2016-01-12 Taiwan Semiconductor Manufacturing Co., Ltd. Bonded semiconductor structures
FR3079662B1 (fr) * 2018-03-30 2020-02-28 Soitec Substrat pour applications radiofrequences et procede de fabrication associe
US11262383B1 (en) 2018-09-26 2022-03-01 Microfabrica Inc. Probes having improved mechanical and/or electrical properties for making contact between electronic circuit elements and methods for making
CN119141981B (zh) * 2024-09-12 2025-04-11 苏州融睿电子科技有限公司 一种玻璃基板及其制备方法、电子器件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2620598A (en) * 1947-04-22 1952-12-09 James A Jobling And Company Lt Method of fabricating multi-component glass articles
FR1350402A (fr) * 1962-03-16 1964-01-24 Gen Electric Dispositifs à semiconducteurs et méthodes de fabrication
US3235428A (en) * 1963-04-10 1966-02-15 Bell Telephone Labor Inc Method of making integrated semiconductor devices
US3414465A (en) * 1965-06-21 1968-12-03 Owens Illinois Inc Sealed glass article of manufacture
US3577044A (en) * 1966-03-08 1971-05-04 Ibm Integrated semiconductor devices and fabrication methods therefor
US3620833A (en) * 1966-12-23 1971-11-16 Texas Instruments Inc Integrated circuit fabrication
US3661676A (en) * 1970-05-04 1972-05-09 Us Army Production of single crystal aluminum oxide
US3695956A (en) * 1970-05-25 1972-10-03 Rca Corp Method for forming isolated semiconductor devices

Also Published As

Publication number Publication date
US3909332A (en) 1975-09-30
FR2232080B3 (OSRAM) 1977-04-08
DE2425993A1 (de) 1974-12-19
FR2232080A1 (OSRAM) 1974-12-27
NL7407484A (OSRAM) 1974-12-06
JPS5028986A (OSRAM) 1975-03-24

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