SE515915C2 - Metod och integrerad krets för våglängdkompensering vid halvledartillverkning - Google Patents
Metod och integrerad krets för våglängdkompensering vid halvledartillverkningInfo
- Publication number
- SE515915C2 SE515915C2 SE9804422A SE9804422A SE515915C2 SE 515915 C2 SE515915 C2 SE 515915C2 SE 9804422 A SE9804422 A SE 9804422A SE 9804422 A SE9804422 A SE 9804422A SE 515915 C2 SE515915 C2 SE 515915C2
- Authority
- SE
- Sweden
- Prior art keywords
- waveguide layer
- substrate
- modulator
- selecting
- photonic device
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000000873 masking effect Effects 0.000 claims abstract description 18
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000005424 photoluminescence Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 description 21
- 239000000463 material Substances 0.000 description 7
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 241000295146 Gallionellaceae Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9804422A SE515915C2 (sv) | 1998-12-18 | 1998-12-18 | Metod och integrerad krets för våglängdkompensering vid halvledartillverkning |
| TW088100705A TW478008B (en) | 1998-12-18 | 1999-01-18 | Method for wavelength compensation in semiconductor manufacturing |
| EP99964882A EP1142035A1 (en) | 1998-12-18 | 1999-12-15 | Method for wavelength compensation in semiconductor manufacturing |
| CA002352228A CA2352228A1 (en) | 1998-12-18 | 1999-12-15 | Method for wavelength compensation in semiconductor manufacturing |
| PCT/SE1999/002377 WO2000038284A1 (en) | 1998-12-18 | 1999-12-15 | Method for wavelength compensation in semiconductor manufacturing |
| CNB99814617XA CN1158731C (zh) | 1998-12-18 | 1999-12-15 | 半导体制造中的波长补偿方法 |
| KR1020017007413A KR100615531B1 (ko) | 1998-12-18 | 1999-12-15 | 반도체 제조시의 파장 보상 방법 |
| AU30915/00A AU3091500A (en) | 1998-12-18 | 1999-12-15 | Method for wavelength compensation in semiconductor manufacturing |
| JP2000590261A JP2002533940A (ja) | 1998-12-18 | 1999-12-15 | 半導体製造における波長補正の方法 |
| US09/466,225 US6274398B1 (en) | 1998-12-18 | 1999-12-17 | Method for wavelength compensation in semiconductor photonic IC |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9804422A SE515915C2 (sv) | 1998-12-18 | 1998-12-18 | Metod och integrerad krets för våglängdkompensering vid halvledartillverkning |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE9804422D0 SE9804422D0 (sv) | 1998-12-18 |
| SE9804422L SE9804422L (sv) | 2000-06-19 |
| SE515915C2 true SE515915C2 (sv) | 2001-10-29 |
Family
ID=20413749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9804422A SE515915C2 (sv) | 1998-12-18 | 1998-12-18 | Metod och integrerad krets för våglängdkompensering vid halvledartillverkning |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6274398B1 (zh) |
| EP (1) | EP1142035A1 (zh) |
| JP (1) | JP2002533940A (zh) |
| KR (1) | KR100615531B1 (zh) |
| CN (1) | CN1158731C (zh) |
| AU (1) | AU3091500A (zh) |
| CA (1) | CA2352228A1 (zh) |
| SE (1) | SE515915C2 (zh) |
| TW (1) | TW478008B (zh) |
| WO (1) | WO2000038284A1 (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7058246B2 (en) * | 2001-10-09 | 2006-06-06 | Infinera Corporation | Transmitter photonic integrated circuit (TxPIC) chip with enhanced power and yield without on-chip amplification |
| US6791746B2 (en) * | 2002-02-12 | 2004-09-14 | Finisar Corporation | Extended bandwidth semiconductor optical amplifier |
| JP2014063052A (ja) * | 2012-09-21 | 2014-04-10 | Mitsubishi Electric Corp | 光変調器の製造方法および光変調器 |
| JP6291849B2 (ja) * | 2014-01-10 | 2018-03-14 | 三菱電機株式会社 | 半導体装置の製造方法、半導体装置 |
| JP6414306B2 (ja) * | 2017-09-27 | 2018-10-31 | 三菱電機株式会社 | 半導体装置の製造方法、半導体装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0472221B1 (en) * | 1990-08-24 | 1995-12-20 | Nec Corporation | Method for fabricating an optical semiconductor device |
| JP3285426B2 (ja) * | 1993-08-04 | 2002-05-27 | 株式会社日立製作所 | 半導体光集積素子及びその製造方法 |
| JPH07176827A (ja) | 1993-08-20 | 1995-07-14 | Mitsubishi Electric Corp | 変調器付半導体レーザ装置の製造方法 |
| JPH1056229A (ja) * | 1996-08-08 | 1998-02-24 | Fujitsu Ltd | 半導体光集積素子の製造方法 |
-
1998
- 1998-12-18 SE SE9804422A patent/SE515915C2/sv not_active IP Right Cessation
-
1999
- 1999-01-18 TW TW088100705A patent/TW478008B/zh not_active IP Right Cessation
- 1999-12-15 AU AU30915/00A patent/AU3091500A/en not_active Abandoned
- 1999-12-15 KR KR1020017007413A patent/KR100615531B1/ko not_active IP Right Cessation
- 1999-12-15 CA CA002352228A patent/CA2352228A1/en not_active Abandoned
- 1999-12-15 JP JP2000590261A patent/JP2002533940A/ja active Pending
- 1999-12-15 EP EP99964882A patent/EP1142035A1/en not_active Withdrawn
- 1999-12-15 WO PCT/SE1999/002377 patent/WO2000038284A1/en not_active Application Discontinuation
- 1999-12-15 CN CNB99814617XA patent/CN1158731C/zh not_active Expired - Fee Related
- 1999-12-17 US US09/466,225 patent/US6274398B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| SE9804422D0 (sv) | 1998-12-18 |
| CA2352228A1 (en) | 2000-06-29 |
| AU3091500A (en) | 2000-07-12 |
| KR100615531B1 (ko) | 2006-08-25 |
| TW478008B (en) | 2002-03-01 |
| JP2002533940A (ja) | 2002-10-08 |
| CN1158731C (zh) | 2004-07-21 |
| EP1142035A1 (en) | 2001-10-10 |
| US6274398B1 (en) | 2001-08-14 |
| WO2000038284A1 (en) | 2000-06-29 |
| KR20010101208A (ko) | 2001-11-14 |
| SE9804422L (sv) | 2000-06-19 |
| CN1330805A (zh) | 2002-01-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |