SE469916B - Process for producing two adjacent regions of mutually different dopings at the surface of a semiconductor body - Google Patents
Process for producing two adjacent regions of mutually different dopings at the surface of a semiconductor bodyInfo
- Publication number
- SE469916B SE469916B SE9200553A SE9200553A SE469916B SE 469916 B SE469916 B SE 469916B SE 9200553 A SE9200553 A SE 9200553A SE 9200553 A SE9200553 A SE 9200553A SE 469916 B SE469916 B SE 469916B
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- semiconductor body
- nitrogen
- doping
- silicon
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
Description
469 916 stående del av kiselnitridskiktet som mask alstras därefter ett tjockt kiseloxidskikt över nämnda område, varefter kiselnitridskiktet etsas bort. 469,916 standing part of the silicon nitride layer as a mask, a thick silicon oxide layer is then generated over said area, after which the silicon nitride layer is etched away.
Med nämnda tjocka oxidskikt som mask dopas därefter det andra av de båda områdena. Med hjälp av detta kända förfarande kommer som nämnts de båda områdena av skilda dopningstyper automatiskt att omedelbart gränsa till varandra, områdena blir självlinjerande. Förfarandet kräver dock ett rela- tivt stort antal processteg, däribland två etsningar med mellanliggande oxideringssteg före dopningen av det andra av de båda områdena. Processen lir därför förhållandevis komplicerad och resurskrävande.With said thick oxide layer as a mask, the other of the two areas is then doped. By means of this known method, as mentioned, the two areas of different doping types will automatically be immediately adjacent to each other, the areas becoming self-aligning. However, the process requires a relatively large number of process steps, including two etchings with intermediate oxidation steps prior to the doping of the other of the two areas. The process is therefore relatively complicated and resource-intensive.
REDOGÖRELSE FÖR UPPFINNINGEN Uppfinningen avser att åstadkomma ett förfarande av inledningsvis angivet slag, vilket kan genomföras med ett mindre antal processteg än vad som tidigare varit möjligt.DISCLOSURE OF THE INVENTION The invention intends to provide a process of the kind initially indicated, which can be carried out with a smaller number of process steps than has previously been possible.
Vad som kännetecknar ett förfarande enligt uppfinningen framgår av bifogade patentkrav.What characterizes a method according to the invention is stated in the appended claims.
FIGURBESKRIVNING Uppfinningen skall närmare beskrivas i anslutning till bifogade figurer la-le samt 2a-2e. Fig la-le visar successiva steg vid ett förfarande enligt uppfinningen, där ett skikt av kiseldioxid selektivt omvandlas till ett område av oxynitrid, vilket används som mask vid efterföljande etsning och dopning. Fig 2a-2e visar ett annat förfarande enligt uppfinningen, där ett skikt av polykristallint kisel på substratets yta selektivt omvandlas till ett område av kiselnitrid, vilket används som mask vid efterföljande etsning och dopning.DESCRIPTION OF THE FIGURES The invention will be described in more detail in connection with the accompanying figures 1a-1e and 2a-2e. Figures 1a-1e show successive steps in a process according to the invention, in which a layer of silica is selectively converted into a region of oxynitride, which is used as a mask in subsequent etching and doping. Figures 2a-2e show another method according to the invention, in which a layer of polycrystalline silicon on the surface of the substrate is selectively converted into a region of silicon nitride, which is used as a mask in subsequent etching and doping.
BESKRIVNING AV UTFÖRINGSEXEMPEL Fig la visar området närmast ytan av ett substrat 1. Detta utgörs av en tunn kiselskiva med en tjocklek av t ex 500 Fm. Substratet är svagt dopat, exempelvis svagt p-dopat med en dopningskoncentration av exempelvis 5 - 1014 at/cm3. Dopningsämnet kan exempelvis vara bor. På substratets yta 11 alstras ett kiseldioxidskikt 2 på i och för sig känt sätt genom termisk oxidation, dvs uppvärmning av substratet i närvaro av väte och syre (oxiderande atmosfär). Oxidskiktet har en tjocklek på 2000 Å. 41- 469 916 Som visas i fig lb anbringas ovanpå kiseldioxidskiktet 2 ett skikt 3 av fotoresist, vilket mönstras med fotolitografiska metoder på sådant sätt att skiktet får en öppning 31 för var och en av de p-dopade fickor som skall utbildas. Därefter jonimplanteras bor (Ä) in i substratet 1 genom öppningen 31 och oxidskiktet 2. Energin hos de implanterade boratomerna väljes så att en koncentrationstopp erhålles i den blivande p-fickan 5. Den implanterade bordosen kan vara 1012-1013 at/cmz.DESCRIPTION OF EMBODIMENTS Fig. 1a shows the area closest to the surface of a substrate 1. This consists of a thin silicon wafer with a thickness of, for example, 500 Fm. The substrate is weakly doped, for example weakly p-doped with a doping concentration of, for example, 5 - 1014 at / cm 3. The doping substance can, for example, be boron. On the surface 11 of the substrate, a silica layer 2 is generated in a manner known per se by thermal oxidation, ie heating of the substrate in the presence of hydrogen and oxygen (oxidizing atmosphere). The oxide layer has a thickness of 2000 Å. 41-469 916 As shown in Fig. 1b, a layer 3 of photoresist is applied on top of the silica layer 2, which is patterned by photolithographic methods in such a way that the layer has an opening 31 for each of the p-doped pockets to be trained. Then boron (Ä) is ion-implanted into the substrate 1 through the opening 31 and the oxide layer 2. The energy of the implanted boron atoms is selected so that a concentration peak is obtained in the future p-pocket 5. The implanted bordose can be 1012-1013 at / cm 2.
Härefter implanteras kväve genom öppningen 31 med en energi så vald att ett koncentrationsmaximum hos det implanterade kvävet erhålles i kiseldioxid- skiktet. Detta visas i fig lc, där beteckningen 6 anger inflödet av kväve- joner under jonimplantationen. Den implanterade kvävedosen kan exempelvis vara 1016-1017 at/cmz.Thereafter, nitrogen is implanted through the opening 31 with an energy so selected that a concentration maximum of the implanted nitrogen is obtained in the silica layer. This is shown in Fig. 1c, where the designation 6 indicates the inflow of nitrogen ions during the ion implantation. The implanted nitrogen dose may be, for example, 1016-1017 at / cm 2.
Efter kväveimplantationen och borttagning av maskskiktet 3 görs en värmebehandling vid en temperatur av 800-1000 OC, varvid det implanterade kvävet reagerar med kiseldioxiden. Den del av skiktet 2, där kväve implanterats, dvs den under öppningen 31 belägna delen av skiktet, omvandlas därvid till en oxynitrid (SixNyOz). Den nämnda värmebehandlingen görs företrädesvis i mättad kväveatmosfär för att förhindra utdiffusion av kväve under värmebehandlingen.After the nitrogen implantation and removal of the mask layer 3, a heat treatment is performed at a temperature of 800-1000 ° C, whereby the implanted nitrogen reacts with the silica. The part of the layer 2 where nitrogen has been implanted, i.e. the part of the layer located below the opening 31, is then converted into an oxynitride (SixNyO 2). The said heat treatment is preferably carried out in a saturated nitrogen atmosphere in order to prevent the diffusion of nitrogen during the heat treatment.
Härefter bortetsas genom selektiv etsning de icke omvandlade delarna av kiseldioxidskiktet 2, medan den till oxynitrid omvandlade delen 21 av oxidskiktet 2 lämnas i huvudsak oberörd av etsningen. Som visas i fig ld görs därefter en jonimplantation av fosfor (7). Det kvarlämnade oxynitrid- skiktet 21 tjänar därvid som mask, dvs fosforjonerna fastnar i detta skikt medan de utanför skiktet belägna delarna av substratet blir n-dopade, dvs bildar en n-ficka 8. Denna kommer automatiskt på grund av det valda för- farandet att bli självlinjerad till p-fickan 5, dvs att omedelbart gränsa till denna ficka.Thereafter, the non-converted parts of the silica layer 2 are etched away by selective etching, while the part 21 of the oxide layer 2 converted to oxynitride is left substantially untouched by the etching. As shown in Fig. 1d, an ion implantation of phosphorus (7) is then performed. The remaining oxynitride layer 21 then serves as a mask, ie the phosphor ions adhere to this layer while the parts of the substrate located outside the layer become n-doped, ie form an n-pocket 8. This will automatically due to the chosen method become self-aligned to the p-pocket 5, ie to immediately border on this pocket.
Till sist borttages oxynitridskiktet 21 genom ett etsförfarande, och de implanterade dopämnena kan om så önskas drivas in genom värmebehandling.Finally, the oxynitride layer 21 is removed by an etching process, and the implanted dopants can be repelled by heat treatment if desired.
Fig le visar halvledarkroppen 1 med de med hjälp av förfarandet enligt uppfinningen framställda till varandra gränsande områdena - p-fickan 5 och n-fickan 8. Områdenas tjocklek (djup under ytan 11) är exempelvis 2-H Mm 3 , 1 och deras dopningskoncentration ca 10 at/cm . 469 916 Fig 2a-2e åskådliggör successiva steg vid ett alternativt förfarande enligt uppfinningen. Som visas i fig 2a alstras på ytan 11 av ett halvledar- substrat 1 ett tunt kiseldioxidskikt 12 med en tjocklek på exempelvis 400 Ã. På detta skikt deponeras därefter ett skikt 2 av polykristallint kisel och med en tjocklek på exempelvis 1000 Ä. Kiseldioxidskiktet 11 alstras lämpligen genom termisk oxidation, och kiselskiktet 2 med hjälp av s k LPCVD (Low Pressure Chemical Vapour Deposition). På samma sätt som beskri- vits i anslutning till fig 1 genereras därefter med hjälp av fotolitogra- fiska metoder en mask 3 med en öppning 31 ovanför varje önskad p-ficka. Som visas i fig 2b görs därefter en jonimplantation av bor (4) genom öppningen 31 och med energi så vald att koncentrationsmaximum erhålles i den önskade p-fickan 5. Som visas i fig 2c utföres därefter en jonimplantation av kväve (6) med så vald energi att kvävet deponeras i det polykristallina kisel- skiktet 2. På grund av masken 3 kommer kväve att införas i skiktet 2 endast inom området under öppningen 31. Masken 3 borttages, och en värmebehandling utföres, exempelvis på samma sätt som beskrivits i anslutning till fig 1, varvid den under öppningen 31 belägna delen av skiktet 2 kommer att omvand- las till kiselnitrid - SixNy.Fig. 1c shows the semiconductor body 1 with the adjacent areas produced by means of the method according to the invention - the p-pocket 5 and the n-pocket 8. The thickness of the areas (depth below the surface 11) is, for example, 2-H Mm 3, 1 and their doping concentration approx. 10 at / cm. 469 916 Figs. 2a-2e illustrate successive steps in an alternative method according to the invention. As shown in Fig. 2a, a thin silicon dioxide layer 12 with a thickness of, for example, 400 Å is generated on the surface 11 of a semiconductor substrate 1. A layer 2 of polycrystalline silicon and with a thickness of, for example, 1000 Å is then deposited on this layer. The silica layer 11 is suitably generated by thermal oxidation, and the silicon layer 2 by means of so-called LPCVD (Low Pressure Chemical Vapor Deposition). In the same way as described in connection with Fig. 1, a mask 3 with an opening 31 above each desired p-pocket is then generated by means of photolithographic methods. As shown in Fig. 2b, an ion implantation of boron (4) is then made through the opening 31 and with energy so selected that the concentration maximum is obtained in the desired p-pocket 5. As shown in Fig. 2c, an ion implantation of nitrogen (6) is then performed with the selected energy that the nitrogen is deposited in the polycrystalline silicon layer 2. Due to the mask 3, nitrogen will be introduced into the layer 2 only within the area below the opening 31. The mask 3 is removed, and a heat treatment is performed, for example in the same way as described in connection with fig. 1, whereby the part of the layer 2 located below the opening 31 will be converted into silicon nitride - SixNy.
Genom selektiv etsning borttages de till kiselnitrid icke omvandlade delarna av skiktet 2 samt motsvarande delar av kiseldioxidskiktet 12. Som visas i fig 2d utföres därefter en jonimplantation av fosfor (7) med kiselnitridskiktet 21 som mask. Härvid alstras de n-dopade områdena 8 i figuren. Till slut borttages genom selektiv etsning kiselnitridskiktet 21 och underliggande del 121 av kiseldioxidskiktet 12, en värmebehandling görs för ytterligare indrivning av dopningsämnena, och halvledarkroppen får det i fig 2e visade utseendet.By selective etching, the parts of the layer 2 which are not converted to silicon nitride and corresponding parts of the silicon dioxide layer 12 are removed. As shown in Fig. 2d, an ion implantation of phosphorus (7) is then performed with the silicon nitride layer 21 as a mask. In this case, the n-doped areas 8 in the figure are generated. Finally, by selective etching, the silicon nitride layer 21 and the underlying part 121 of the silica layer 12 are removed, a heat treatment is made for further collection of the dopants, and the semiconductor body has the appearance shown in Fig. 2e.
Genom att förfarande enligt uppfinningen kan alltså på enklast möjliga sätt, dvs med ett minimum av processteg, självlinjerande områden av skilda dopningstyper alstras vid ytan av en halvledarkropp. Dessa områden kan sedan användas för utbildande av CMOS-kretsar, varvid exempelvis p-fickorna används för bildande av n-kanaltransistorer och n-fickorna används för utbildande av p-kanaltransistorer. De enligt uppfinningen alstrade områdena kan emellertid användas även för utbildande av andra typer av halvledar- kretsar eller halvledarkomponenter, såsom JFET- eller MESFET-transistorer eller bipolära transistorer.Thus, by the method according to the invention, self-aligning areas of different doping types can be generated at the surface of a semiconductor body in the simplest possible way, ie with a minimum of process steps. These regions can then be used to train CMOS circuits, with, for example, the p-pockets being used to form n-channel transistors and the n-pockets being used to train p-channel transistors. However, the regions generated according to the invention can also be used for the formation of other types of semiconductor circuits or semiconductor components, such as JFET or MESFET transistors or bipolar transistors.
Claims (9)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9200553A SE469916B (en) | 1992-02-25 | 1992-02-25 | Process for producing two adjacent regions of mutually different dopings at the surface of a semiconductor body |
PCT/SE1993/000095 WO1993017450A1 (en) | 1992-02-25 | 1993-02-03 | Method for manufacturing two contiguous regions of mutually different dopings at the surface of a semiconductor body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9200553A SE469916B (en) | 1992-02-25 | 1992-02-25 | Process for producing two adjacent regions of mutually different dopings at the surface of a semiconductor body |
Publications (3)
Publication Number | Publication Date |
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SE9200553D0 SE9200553D0 (en) | 1992-02-25 |
SE9200553L SE9200553L (en) | 1993-08-26 |
SE469916B true SE469916B (en) | 1993-10-04 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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SE9200553A SE469916B (en) | 1992-02-25 | 1992-02-25 | Process for producing two adjacent regions of mutually different dopings at the surface of a semiconductor body |
Country Status (2)
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SE (1) | SE469916B (en) |
WO (1) | WO1993017450A1 (en) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US4435896A (en) * | 1981-12-07 | 1984-03-13 | Bell Telephone Laboratories, Incorporated | Method for fabricating complementary field effect transistor devices |
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1992
- 1992-02-25 SE SE9200553A patent/SE469916B/en not_active IP Right Cessation
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1993
- 1993-02-03 WO PCT/SE1993/000095 patent/WO1993017450A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO1993017450A1 (en) | 1993-09-02 |
SE9200553L (en) | 1993-08-26 |
SE9200553D0 (en) | 1992-02-25 |
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