SE458245B - Halvledarkopplingsanordning av faelteffektstransistortyp med foersaenkt kanal, och med majoritetsbaerarutfrysningstillstaand samt foerfarande foer att driva densamma - Google Patents
Halvledarkopplingsanordning av faelteffektstransistortyp med foersaenkt kanal, och med majoritetsbaerarutfrysningstillstaand samt foerfarande foer att driva densammaInfo
- Publication number
- SE458245B SE458245B SE8403943A SE8403943A SE458245B SE 458245 B SE458245 B SE 458245B SE 8403943 A SE8403943 A SE 8403943A SE 8403943 A SE8403943 A SE 8403943A SE 458245 B SE458245 B SE 458245B
- Authority
- SE
- Sweden
- Prior art keywords
- region
- bias
- channel
- transient
- recessed channel
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000000034 method Methods 0.000 title claims description 7
- 230000005669 field effect Effects 0.000 title claims description 4
- 238000013475 authorization Methods 0.000 title 1
- 230000001052 transient effect Effects 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 238000007710 freezing Methods 0.000 claims description 12
- 230000008014 freezing Effects 0.000 claims description 12
- 230000003068 static effect Effects 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 8
- 230000004044 response Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000010349 pulsation Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims 4
- 238000001816 cooling Methods 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000969 carrier Substances 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000037230 mobility Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000012258 culturing Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66992—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by the variation of applied heat
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US52248783A | 1983-08-12 | 1983-08-12 | |
US06/550,506 US4472727A (en) | 1983-08-12 | 1983-11-10 | Carrier freezeout field-effect device |
Publications (3)
Publication Number | Publication Date |
---|---|
SE8403943D0 SE8403943D0 (sv) | 1984-08-01 |
SE8403943L SE8403943L (sv) | 1985-02-13 |
SE458245B true SE458245B (sv) | 1989-03-06 |
Family
ID=27060828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8403943A SE458245B (sv) | 1983-08-12 | 1984-08-01 | Halvledarkopplingsanordning av faelteffektstransistortyp med foersaenkt kanal, och med majoritetsbaerarutfrysningstillstaand samt foerfarande foer att driva densamma |
Country Status (9)
Country | Link |
---|---|
US (1) | US4472727A (nl) |
JP (1) | JPH069206B2 (nl) |
CA (1) | CA1201536A (nl) |
DE (1) | DE3429577A1 (nl) |
FR (1) | FR2550662B1 (nl) |
GB (1) | GB2144913B (nl) |
IT (1) | IT1176606B (nl) |
NL (1) | NL188435C (nl) |
SE (1) | SE458245B (nl) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5126830A (en) * | 1989-10-31 | 1992-06-30 | General Electric Company | Cryogenic semiconductor power devices |
US5612615A (en) * | 1992-08-21 | 1997-03-18 | American Superconductor Corporation | Cryogenic electronics power supply |
US5347168A (en) * | 1992-08-21 | 1994-09-13 | American Superconductor Corporation | Cryogenic electronics power supply and power sink |
WO1994015364A1 (en) * | 1992-12-29 | 1994-07-07 | Honeywell Inc. | Depletable semiconductor on insulator low threshold complementary transistors |
DE10061529A1 (de) * | 2000-12-11 | 2002-06-27 | Infineon Technologies Ag | Feldeffekt gesteuertes Halbleiterbauelement und Verfahren |
CN103940885B (zh) * | 2014-03-18 | 2017-11-28 | 复旦大学 | 离子敏感场效应晶体管及其制备工艺 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6407158A (nl) * | 1963-06-24 | 1964-12-28 | ||
US3512012A (en) * | 1965-11-16 | 1970-05-12 | United Aircraft Corp | Field effect transistor circuit |
US3500137A (en) * | 1967-12-22 | 1970-03-10 | Texas Instruments Inc | Cryogenic semiconductor devices |
US3502908A (en) * | 1968-09-23 | 1970-03-24 | Shell Oil Co | Transistor inverter circuit |
US3644803A (en) * | 1969-03-18 | 1972-02-22 | Us Air Force | Electrical connections to low temperatures |
DE2619663C3 (de) * | 1976-05-04 | 1982-07-22 | Siemens AG, 1000 Berlin und 8000 München | Feldeffekttransistor, Verfahren zu seinem Betrieb und Verwendung als schneller Schalter sowie in einer integrierten Schaltung |
US4129880A (en) * | 1977-07-01 | 1978-12-12 | International Business Machines Incorporated | Channel depletion boundary modulation magnetic field sensor |
US4274105A (en) * | 1978-12-29 | 1981-06-16 | International Business Machines Corporation | MOSFET Substrate sensitivity control |
JPS5720485A (en) * | 1980-07-11 | 1982-02-02 | Mitsubishi Electric Corp | Cryogenic refrigerating plant |
JPS5863168A (ja) * | 1981-10-12 | 1983-04-14 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果型半導体装置 |
-
1983
- 1983-11-10 US US06/550,506 patent/US4472727A/en not_active Expired - Lifetime
-
1984
- 1984-07-17 CA CA000459081A patent/CA1201536A/en not_active Expired
- 1984-08-01 SE SE8403943A patent/SE458245B/sv not_active IP Right Cessation
- 1984-08-06 FR FR8412402A patent/FR2550662B1/fr not_active Expired
- 1984-08-08 GB GB08420184A patent/GB2144913B/en not_active Expired
- 1984-08-10 DE DE19843429577 patent/DE3429577A1/de not_active Withdrawn
- 1984-08-10 IT IT22297/84A patent/IT1176606B/it active
- 1984-08-10 JP JP59166620A patent/JPH069206B2/ja not_active Expired - Lifetime
- 1984-08-10 NL NLAANVRAGE8402474,A patent/NL188435C/nl not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
FR2550662B1 (fr) | 1988-12-23 |
FR2550662A1 (fr) | 1985-02-15 |
US4472727A (en) | 1984-09-18 |
DE3429577A1 (de) | 1985-02-28 |
GB8420184D0 (en) | 1984-09-12 |
CA1201536A (en) | 1986-03-04 |
GB2144913A (en) | 1985-03-13 |
IT8422297A0 (it) | 1984-08-10 |
IT1176606B (it) | 1987-08-18 |
NL188435C (nl) | 1992-06-16 |
JPS6055667A (ja) | 1985-03-30 |
SE8403943D0 (sv) | 1984-08-01 |
GB2144913B (en) | 1987-03-25 |
SE8403943L (sv) | 1985-02-13 |
JPH069206B2 (ja) | 1994-02-02 |
NL8402474A (nl) | 1985-03-01 |
NL188435B (nl) | 1992-01-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Taylor | Subthreshold conduction in MOSFET's | |
JPS6068654A (ja) | 半導体集積回路 | |
US11569381B2 (en) | Diamond MIS transistor | |
Moens et al. | Negative dynamic Ron in AlGaN/GaN power devices | |
EP2824710A2 (en) | Semiconductor device with an electric field modification structure, and corresponding integrated circuit, fabrication method and method of increasing breakdown voltage | |
JPH08236758A (ja) | 非対称mosデバイスおよびその製造方法 | |
SE458245B (sv) | Halvledarkopplingsanordning av faelteffektstransistortyp med foersaenkt kanal, och med majoritetsbaerarutfrysningstillstaand samt foerfarande foer att driva densamma | |
Colinge | Transconductance of silicon-on-insulator (SOI) MOSFET's | |
Lazar et al. | The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing | |
Richman | Modulation of space-charge-limited current flow in insulated-gate field-effect tetrodes | |
JP6718612B2 (ja) | SiC接合型電界効果トランジスタ及びSiC相補型接合型電界効果トランジスタ | |
Lee et al. | Island-edge effects in C-MOS/SOS transistors | |
Omura et al. | Physical background of substrate current characteristics and hot-carrier immunity in short-channel ultrathin-film MOSFET's/SIMOX | |
Farrell et al. | Self-pulsation operating regime for the absorber of a twin section laser diode | |
Zhang et al. | Simulation of high power step-buffer 4H silicon carbide metal semiconductor field effect transistor | |
De La Hidalga-W et al. | Effect of the forward biasing the source-substrate junction in n-metal–oxide–semiconductor transistors for possible low power complementary metal–oxide–semiconductor integrated circuits’ applications | |
Wordeman | Characterization of depletion mode MOSFET's | |
Amarnath et al. | TCAD-based comparative study of gallium-oxide based FinFET and MOSFET | |
JP3271972B2 (ja) | フェルミしきい値電界効果トランジスタ | |
Ryu | Development of CMOS technology for smart power applications in silicon carbide | |
Dierickx et al. | Operation of majority and minority carrier MOSFET's at liquid helium temperature | |
Zhao et al. | Improved analytical model for threshold behavior of sidegating effect in GaAs metal–semiconductor field-effect transistors induced by impact ionization of deep traps | |
KR101229187B1 (ko) | 수직 핀치 접합 전계 효과 트랜지스터 | |
Angelov et al. | Thermal Analysis of ESD Diode in FDSOI Technology using COMSOL Multiphysics | |
Nichols et al. | Space-charge-limited currents in semiconductors and insulators. Majority carrier transistors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |
Ref document number: 8403943-7 Effective date: 19930307 Format of ref document f/p: F |