IT1176606B - Dispositivo a effetto di campo a congelamento dei portatori di carica - Google Patents
Dispositivo a effetto di campo a congelamento dei portatori di caricaInfo
- Publication number
- IT1176606B IT1176606B IT22297/84A IT2229784A IT1176606B IT 1176606 B IT1176606 B IT 1176606B IT 22297/84 A IT22297/84 A IT 22297/84A IT 2229784 A IT2229784 A IT 2229784A IT 1176606 B IT1176606 B IT 1176606B
- Authority
- IT
- Italy
- Prior art keywords
- chargers
- freeze
- field
- effecting device
- effecting
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/387—Devices controllable only by the variation of applied heat
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US52248783A | 1983-08-12 | 1983-08-12 | |
| US06/550,506 US4472727A (en) | 1983-08-12 | 1983-11-10 | Carrier freezeout field-effect device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8422297A0 IT8422297A0 (it) | 1984-08-10 |
| IT1176606B true IT1176606B (it) | 1987-08-18 |
Family
ID=27060828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT22297/84A IT1176606B (it) | 1983-08-12 | 1984-08-10 | Dispositivo a effetto di campo a congelamento dei portatori di carica |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4472727A (it) |
| JP (1) | JPH069206B2 (it) |
| CA (1) | CA1201536A (it) |
| DE (1) | DE3429577A1 (it) |
| FR (1) | FR2550662B1 (it) |
| GB (1) | GB2144913B (it) |
| IT (1) | IT1176606B (it) |
| NL (1) | NL188435C (it) |
| SE (1) | SE458245B (it) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5126830A (en) * | 1989-10-31 | 1992-06-30 | General Electric Company | Cryogenic semiconductor power devices |
| US5347168A (en) * | 1992-08-21 | 1994-09-13 | American Superconductor Corporation | Cryogenic electronics power supply and power sink |
| US5612615A (en) * | 1992-08-21 | 1997-03-18 | American Superconductor Corporation | Cryogenic electronics power supply |
| WO1994015364A1 (en) * | 1992-12-29 | 1994-07-07 | Honeywell Inc. | Depletable semiconductor on insulator low threshold complementary transistors |
| DE10061529A1 (de) * | 2000-12-11 | 2002-06-27 | Infineon Technologies Ag | Feldeffekt gesteuertes Halbleiterbauelement und Verfahren |
| CN103940885B (zh) * | 2014-03-18 | 2017-11-28 | 复旦大学 | 离子敏感场效应晶体管及其制备工艺 |
| US20240322019A1 (en) * | 2019-10-28 | 2024-09-26 | Psiquantum, Corp. | Electronic components employing field ionization |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1071383A (en) * | 1963-06-24 | 1967-06-07 | Hitachi Ltd | Field-effect semiconductor devices |
| US3512012A (en) * | 1965-11-16 | 1970-05-12 | United Aircraft Corp | Field effect transistor circuit |
| US3500137A (en) * | 1967-12-22 | 1970-03-10 | Texas Instruments Inc | Cryogenic semiconductor devices |
| US3502908A (en) * | 1968-09-23 | 1970-03-24 | Shell Oil Co | Transistor inverter circuit |
| US3644803A (en) * | 1969-03-18 | 1972-02-22 | Us Air Force | Electrical connections to low temperatures |
| DE2619663C3 (de) * | 1976-05-04 | 1982-07-22 | Siemens AG, 1000 Berlin und 8000 München | Feldeffekttransistor, Verfahren zu seinem Betrieb und Verwendung als schneller Schalter sowie in einer integrierten Schaltung |
| US4129880A (en) * | 1977-07-01 | 1978-12-12 | International Business Machines Incorporated | Channel depletion boundary modulation magnetic field sensor |
| US4274105A (en) * | 1978-12-29 | 1981-06-16 | International Business Machines Corporation | MOSFET Substrate sensitivity control |
| JPS5720485A (en) * | 1980-07-11 | 1982-02-02 | Mitsubishi Electric Corp | Cryogenic refrigerating plant |
| JPS5863168A (ja) * | 1981-10-12 | 1983-04-14 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果型半導体装置 |
-
1983
- 1983-11-10 US US06/550,506 patent/US4472727A/en not_active Expired - Lifetime
-
1984
- 1984-07-17 CA CA000459081A patent/CA1201536A/en not_active Expired
- 1984-08-01 SE SE8403943A patent/SE458245B/sv not_active IP Right Cessation
- 1984-08-06 FR FR8412402A patent/FR2550662B1/fr not_active Expired
- 1984-08-08 GB GB08420184A patent/GB2144913B/en not_active Expired
- 1984-08-10 DE DE19843429577 patent/DE3429577A1/de not_active Withdrawn
- 1984-08-10 IT IT22297/84A patent/IT1176606B/it active
- 1984-08-10 JP JP59166620A patent/JPH069206B2/ja not_active Expired - Lifetime
- 1984-08-10 NL NLAANVRAGE8402474,A patent/NL188435C/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB2144913A (en) | 1985-03-13 |
| IT8422297A0 (it) | 1984-08-10 |
| NL188435C (nl) | 1992-06-16 |
| NL8402474A (nl) | 1985-03-01 |
| GB8420184D0 (en) | 1984-09-12 |
| SE458245B (sv) | 1989-03-06 |
| DE3429577A1 (de) | 1985-02-28 |
| US4472727A (en) | 1984-09-18 |
| SE8403943L (sv) | 1985-02-13 |
| FR2550662B1 (fr) | 1988-12-23 |
| FR2550662A1 (fr) | 1985-02-15 |
| JPH069206B2 (ja) | 1994-02-02 |
| GB2144913B (en) | 1987-03-25 |
| JPS6055667A (ja) | 1985-03-30 |
| NL188435B (nl) | 1992-01-16 |
| SE8403943D0 (sv) | 1984-08-01 |
| CA1201536A (en) | 1986-03-04 |
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