IT8422297A0 - Dispositivo a effetto di campo a congelamento dei portatori di carica. - Google Patents

Dispositivo a effetto di campo a congelamento dei portatori di carica.

Info

Publication number
IT8422297A0
IT8422297A0 IT8422297A IT2229784A IT8422297A0 IT 8422297 A0 IT8422297 A0 IT 8422297A0 IT 8422297 A IT8422297 A IT 8422297A IT 2229784 A IT2229784 A IT 2229784A IT 8422297 A0 IT8422297 A0 IT 8422297A0
Authority
IT
Italy
Prior art keywords
field effect
effect device
charge carrier
freezing field
carrier freezing
Prior art date
Application number
IT8422297A
Other languages
English (en)
Other versions
IT1176606B (it
Inventor
Stuart Keene Tewksbury
Original Assignee
American Telephone & Telegraph
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone & Telegraph filed Critical American Telephone & Telegraph
Publication of IT8422297A0 publication Critical patent/IT8422297A0/it
Application granted granted Critical
Publication of IT1176606B publication Critical patent/IT1176606B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66992—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by the variation of applied heat
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
IT22297/84A 1983-08-12 1984-08-10 Dispositivo a effetto di campo a congelamento dei portatori di carica IT1176606B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US52248783A 1983-08-12 1983-08-12
US06/550,506 US4472727A (en) 1983-08-12 1983-11-10 Carrier freezeout field-effect device

Publications (2)

Publication Number Publication Date
IT8422297A0 true IT8422297A0 (it) 1984-08-10
IT1176606B IT1176606B (it) 1987-08-18

Family

ID=27060828

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22297/84A IT1176606B (it) 1983-08-12 1984-08-10 Dispositivo a effetto di campo a congelamento dei portatori di carica

Country Status (9)

Country Link
US (1) US4472727A (it)
JP (1) JPH069206B2 (it)
CA (1) CA1201536A (it)
DE (1) DE3429577A1 (it)
FR (1) FR2550662B1 (it)
GB (1) GB2144913B (it)
IT (1) IT1176606B (it)
NL (1) NL188435C (it)
SE (1) SE458245B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126830A (en) * 1989-10-31 1992-06-30 General Electric Company Cryogenic semiconductor power devices
US5612615A (en) * 1992-08-21 1997-03-18 American Superconductor Corporation Cryogenic electronics power supply
US5347168A (en) * 1992-08-21 1994-09-13 American Superconductor Corporation Cryogenic electronics power supply and power sink
WO1994015364A1 (en) * 1992-12-29 1994-07-07 Honeywell Inc. Depletable semiconductor on insulator low threshold complementary transistors
DE10061529A1 (de) * 2000-12-11 2002-06-27 Infineon Technologies Ag Feldeffekt gesteuertes Halbleiterbauelement und Verfahren
CN103940885B (zh) * 2014-03-18 2017-11-28 复旦大学 离子敏感场效应晶体管及其制备工艺

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6407158A (it) * 1963-06-24 1964-12-28
US3512012A (en) * 1965-11-16 1970-05-12 United Aircraft Corp Field effect transistor circuit
US3500137A (en) * 1967-12-22 1970-03-10 Texas Instruments Inc Cryogenic semiconductor devices
US3502908A (en) * 1968-09-23 1970-03-24 Shell Oil Co Transistor inverter circuit
US3644803A (en) * 1969-03-18 1972-02-22 Us Air Force Electrical connections to low temperatures
DE2619663C3 (de) * 1976-05-04 1982-07-22 Siemens AG, 1000 Berlin und 8000 München Feldeffekttransistor, Verfahren zu seinem Betrieb und Verwendung als schneller Schalter sowie in einer integrierten Schaltung
US4129880A (en) * 1977-07-01 1978-12-12 International Business Machines Incorporated Channel depletion boundary modulation magnetic field sensor
US4274105A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation MOSFET Substrate sensitivity control
JPS5720485A (en) * 1980-07-11 1982-02-02 Mitsubishi Electric Corp Cryogenic refrigerating plant
JPS5863168A (ja) * 1981-10-12 1983-04-14 Nippon Telegr & Teleph Corp <Ntt> 電界効果型半導体装置

Also Published As

Publication number Publication date
GB2144913A (en) 1985-03-13
IT1176606B (it) 1987-08-18
SE8403943L (sv) 1985-02-13
CA1201536A (en) 1986-03-04
NL188435C (nl) 1992-06-16
GB2144913B (en) 1987-03-25
JPS6055667A (ja) 1985-03-30
DE3429577A1 (de) 1985-02-28
GB8420184D0 (en) 1984-09-12
NL188435B (nl) 1992-01-16
SE458245B (sv) 1989-03-06
US4472727A (en) 1984-09-18
NL8402474A (nl) 1985-03-01
JPH069206B2 (ja) 1994-02-02
SE8403943D0 (sv) 1984-08-01
FR2550662B1 (fr) 1988-12-23
FR2550662A1 (fr) 1985-02-15

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