SE457837B - Halvledaranordning av hoegspaenningstyp - Google Patents
Halvledaranordning av hoegspaenningstypInfo
- Publication number
- SE457837B SE457837B SE8103222A SE8103222A SE457837B SE 457837 B SE457837 B SE 457837B SE 8103222 A SE8103222 A SE 8103222A SE 8103222 A SE8103222 A SE 8103222A SE 457837 B SE457837 B SE 457837B
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- emitter
- cathode
- insulating layer
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000001465 metallisation Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 18
- 230000001052 transient effect Effects 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- FFNMBRCFFADNAO-UHFFFAOYSA-N pirenzepine hydrochloride Chemical compound [H+].[H+].[Cl-].[Cl-].C1CN(C)CCN1CC(=O)N1C2=NC=CC=C2NC(=O)C2=CC=CC=C21 FFNMBRCFFADNAO-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15274280A | 1980-05-23 | 1980-05-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE8103222L SE8103222L (sv) | 1981-11-24 |
| SE457837B true SE457837B (sv) | 1989-01-30 |
Family
ID=22544224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8103222A SE457837B (sv) | 1980-05-23 | 1981-05-21 | Halvledaranordning av hoegspaenningstyp |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5710972A (de) |
| CA (1) | CA1163020A (de) |
| CH (1) | CH656485A5 (de) |
| DE (1) | DE3120254A1 (de) |
| SE (1) | SE457837B (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5810656B2 (ja) * | 1977-01-25 | 1983-02-26 | 矢崎総業株式会社 | 太陽熱利用冷暖房給湯装置 |
| JPS58134470A (ja) * | 1982-02-05 | 1983-08-10 | Meidensha Electric Mfg Co Ltd | 増幅ゲ−ト構造のゲ−トタ−ンオフサイリスタ |
| JPH0680821B2 (ja) * | 1989-05-01 | 1994-10-12 | 株式会社東芝 | 高感度トライアック |
| US5656966A (en) * | 1994-03-09 | 1997-08-12 | Cooper Industries, Inc. | Turbine engine ignition exciter circuit including low voltage lockout control |
| US5592118A (en) * | 1994-03-09 | 1997-01-07 | Cooper Industries, Inc. | Ignition exciter circuit with thyristors having high di/dt and high voltage blockage |
| US5970324A (en) * | 1994-03-09 | 1999-10-19 | Driscoll; John Cuervo | Methods of making dual gated power electronic switching devices |
| US5981982A (en) * | 1994-03-09 | 1999-11-09 | Driscoll; John Cuervo | Dual gated power electronic switching devices |
| US7355300B2 (en) | 2004-06-15 | 2008-04-08 | Woodward Governor Company | Solid state turbine engine ignition exciter having elevated temperature operational capability |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5917863B2 (ja) * | 1976-11-04 | 1984-04-24 | 三菱電機株式会社 | サイリスタ |
| JPS5942991B2 (ja) * | 1977-05-23 | 1984-10-18 | 株式会社日立製作所 | サイリスタ |
| DE2855265A1 (de) * | 1978-12-21 | 1980-07-10 | Bbc Brown Boveri & Cie | Thyristor |
-
1981
- 1981-05-14 CA CA000377573A patent/CA1163020A/en not_active Expired
- 1981-05-21 DE DE19813120254 patent/DE3120254A1/de active Granted
- 1981-05-21 SE SE8103222A patent/SE457837B/sv not_active IP Right Cessation
- 1981-05-22 CH CH337481A patent/CH656485A5/de not_active IP Right Cessation
- 1981-05-22 JP JP7680781A patent/JPS5710972A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CH656485A5 (de) | 1986-06-30 |
| SE8103222L (sv) | 1981-11-24 |
| DE3120254A1 (de) | 1982-05-27 |
| JPS5710972A (en) | 1982-01-20 |
| DE3120254C2 (de) | 1993-09-23 |
| CA1163020A (en) | 1984-02-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5453384A (en) | Method of making a silicon controlled rectifier device for electrostatic discharge protection | |
| US4044373A (en) | IGFET with gate protection diode and antiparasitic isolation means | |
| US6268628B1 (en) | Depletion type MOS semiconductor device and MOS power IC | |
| KR100276414B1 (ko) | 절연 게이트형 반도체 장치 | |
| US3934159A (en) | Semiconductor circuit devices using insulated gate-type field effect elements having protective diodes | |
| US4755697A (en) | Bidirectional output semiconductor field effect transistor | |
| US4721986A (en) | Bidirectional output semiconductor field effect transistor and method for its maufacture | |
| US20080142834A1 (en) | Voltage-controlled bidirectional switch | |
| EP0226395A2 (de) | Festkörperrelais mit einer Thyristor-Entladeschaltung | |
| JPH05199655A (ja) | 低キャパシタンス保護回路 | |
| SE457837B (sv) | Halvledaranordning av hoegspaenningstyp | |
| SE431381B (sv) | Tvapoligt overstromsskydd | |
| US4800416A (en) | Bipolar power transistor having bypassable incorporated-base ballast resistance | |
| US4195306A (en) | Gate turn-off thyristor | |
| US4509069A (en) | Light triggerable thyristor with controllable emitter-short circuit and trigger amplification | |
| US6995408B2 (en) | Bidirectional photothyristor chip | |
| US4250409A (en) | Control circuitry using a pull-down transistor for high voltage field terminated diode solid-state switches | |
| US5739555A (en) | Amplifying-gate thyristor with an increased hold current | |
| EP0077930B1 (de) | Thyristor mit Löschsteuerung | |
| GB2208257A (en) | Overvoltage protector | |
| US5614737A (en) | MOS-controlled high-power thyristor | |
| US4536783A (en) | High di/dt, light-triggered thyristor with etched moat current limiting resistors | |
| US4509068A (en) | Thyristor with controllable emitter short circuits and trigger amplification | |
| US4261000A (en) | High voltage semiconductor device having an improved dv/dt capability | |
| JPH0126190B2 (de) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAL | Patent in force |
Ref document number: 8103222-9 Format of ref document f/p: F |
|
| NUG | Patent has lapsed |
Ref document number: 8103222-9 Format of ref document f/p: F |