SE454309B - Forfarande att framstella tunna ledande eller halvledande skikt inbeddade i kisel medelst implantering av metallatomer - Google Patents

Forfarande att framstella tunna ledande eller halvledande skikt inbeddade i kisel medelst implantering av metallatomer

Info

Publication number
SE454309B
SE454309B SE8603652A SE8603652A SE454309B SE 454309 B SE454309 B SE 454309B SE 8603652 A SE8603652 A SE 8603652A SE 8603652 A SE8603652 A SE 8603652A SE 454309 B SE454309 B SE 454309B
Authority
SE
Sweden
Prior art keywords
silicon
implantation
implanted
procedure
heat treatment
Prior art date
Application number
SE8603652A
Other languages
English (en)
Swedish (sv)
Other versions
SE8603652D0 (sv
SE8603652L (sv
Inventor
S Peterson
Original Assignee
Stiftelsen Inst Mikrovags
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stiftelsen Inst Mikrovags filed Critical Stiftelsen Inst Mikrovags
Priority to SE8603652A priority Critical patent/SE454309B/sv
Publication of SE8603652D0 publication Critical patent/SE8603652D0/xx
Priority to EP87850234A priority patent/EP0259282A3/de
Priority to US07/079,500 priority patent/US4837174A/en
Priority to JP62211541A priority patent/JPS6362350A/ja
Publication of SE8603652L publication Critical patent/SE8603652L/xx
Publication of SE454309B publication Critical patent/SE454309B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/023—Deep level dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/024—Defect control-gettering and annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/083—Ion implantation, general
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Junction Field-Effect Transistors (AREA)
SE8603652A 1986-08-29 1986-08-29 Forfarande att framstella tunna ledande eller halvledande skikt inbeddade i kisel medelst implantering av metallatomer SE454309B (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE8603652A SE454309B (sv) 1986-08-29 1986-08-29 Forfarande att framstella tunna ledande eller halvledande skikt inbeddade i kisel medelst implantering av metallatomer
EP87850234A EP0259282A3 (de) 1986-08-29 1987-07-21 Methode zur Verwendung von dünnen leitenden und halbleitenden Schichten in einkristallinem Silizium
US07/079,500 US4837174A (en) 1986-08-29 1987-07-30 Method for producing thin conductive and semi-conductive layers in mono-crystal silicon
JP62211541A JPS6362350A (ja) 1986-08-29 1987-08-27 導電層形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8603652A SE454309B (sv) 1986-08-29 1986-08-29 Forfarande att framstella tunna ledande eller halvledande skikt inbeddade i kisel medelst implantering av metallatomer

Publications (3)

Publication Number Publication Date
SE8603652D0 SE8603652D0 (sv) 1986-08-29
SE8603652L SE8603652L (sv) 1988-03-01
SE454309B true SE454309B (sv) 1988-04-18

Family

ID=20365439

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8603652A SE454309B (sv) 1986-08-29 1986-08-29 Forfarande att framstella tunna ledande eller halvledande skikt inbeddade i kisel medelst implantering av metallatomer

Country Status (4)

Country Link
US (1) US4837174A (de)
EP (1) EP0259282A3 (de)
JP (1) JPS6362350A (de)
SE (1) SE454309B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5236872A (en) * 1991-03-21 1993-08-17 U.S. Philips Corp. Method of manufacturing a semiconductor device having a semiconductor body with a buried silicide layer
DE4224686C2 (de) * 1992-07-25 1994-07-14 Daimler Benz Ag Verfahren zur Implantation von Ionen in einen Festkörper
DE59403155D1 (de) * 1993-05-03 1997-07-24 Rossendorf Forschzent Verfahren zur Herstellung röhrenförmiger Mikrostrukturen in Festkörpern
US5510295A (en) * 1993-10-29 1996-04-23 International Business Machines Corporation Method for lowering the phase transformation temperature of a metal silicide
US5828131A (en) * 1993-10-29 1998-10-27 International Business Machines Corporation Low temperature formation of low resistivity titanium silicide
GB9525784D0 (en) * 1995-12-16 1996-02-14 Philips Electronics Nv Hot carrier transistors and their manufacture
US7234225B2 (en) * 2003-09-22 2007-06-26 St. Jude Medical, Atrial Fibrillation Division, Inc. Method for manufacturing medical device having embedded traces and formed electrodes
US7291849B1 (en) * 2005-09-28 2007-11-06 Agere Systems Inc. Calibration standard for transmission electron microscopy
US8742543B2 (en) * 2007-02-20 2014-06-03 Ziraddin Yagub-Ogly Sadygov Microchannel avalanche photodiode (variants)
JP5887848B2 (ja) * 2011-11-10 2016-03-16 トヨタ自動車株式会社 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096622A (en) * 1975-07-31 1978-06-27 General Motors Corporation Ion implanted Schottky barrier diode
US4343082A (en) * 1980-04-17 1982-08-10 Bell Telephone Laboratories, Incorporated Method of making contact electrodes to silicon gate, and source and drain regions, of a semiconductor device
GB2078441A (en) * 1980-06-17 1982-01-06 Westinghouse Electric Corp Forming impurity regions in semiconductor bodies by high energy ion irradiation
JPS59210642A (ja) * 1983-05-16 1984-11-29 Hitachi Ltd 半導体装置の製造方法
DE3404834A1 (de) * 1984-02-08 1985-08-08 Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin Halbleiter-leistungsbauelement, insbesondere thyristor und gridistor, sowie verfahren zu dessen herstellung

Also Published As

Publication number Publication date
US4837174A (en) 1989-06-06
EP0259282A2 (de) 1988-03-09
JPS6362350A (ja) 1988-03-18
SE8603652D0 (sv) 1986-08-29
EP0259282A3 (de) 1988-06-08
SE8603652L (sv) 1988-03-01

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