SE451918B - Halvledaranordning av hogspenningstyp med reducerad kenslighet for oavsiktlig tillkoppling till foljd av hoga spenningstransienter - Google Patents
Halvledaranordning av hogspenningstyp med reducerad kenslighet for oavsiktlig tillkoppling till foljd av hoga spenningstransienterInfo
- Publication number
- SE451918B SE451918B SE8103223A SE8103223A SE451918B SE 451918 B SE451918 B SE 451918B SE 8103223 A SE8103223 A SE 8103223A SE 8103223 A SE8103223 A SE 8103223A SE 451918 B SE451918 B SE 451918B
- Authority
- SE
- Sweden
- Prior art keywords
- cathode
- region
- gate electrode
- layer
- gate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 230000035945 sensitivity Effects 0.000 title description 3
- 238000001465 metallisation Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 7
- 230000000737 periodic effect Effects 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 description 7
- 230000003014 reinforcing effect Effects 0.000 description 7
- 230000001052 transient effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/233—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/192—Base regions of thyristors
- H10D62/206—Cathode base regions of thyristors
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/152,770 US4261000A (en) | 1980-05-23 | 1980-05-23 | High voltage semiconductor device having an improved dv/dt capability |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE8103223L SE8103223L (sv) | 1981-11-24 |
| SE451918B true SE451918B (sv) | 1987-11-02 |
Family
ID=22544363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8103223A SE451918B (sv) | 1980-05-23 | 1981-05-21 | Halvledaranordning av hogspenningstyp med reducerad kenslighet for oavsiktlig tillkoppling till foljd av hoga spenningstransienter |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4261000A (enrdf_load_stackoverflow) |
| JP (1) | JPS5718361A (enrdf_load_stackoverflow) |
| CA (1) | CA1160358A (enrdf_load_stackoverflow) |
| CH (1) | CH655204A5 (enrdf_load_stackoverflow) |
| DE (1) | DE3120124A1 (enrdf_load_stackoverflow) |
| SE (1) | SE451918B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4514898A (en) * | 1983-02-18 | 1985-05-07 | Westinghouse Electric Corp. | Method of making a self protected thyristor |
| JPS61113279A (ja) * | 1984-11-08 | 1986-05-31 | Fuji Electric Co Ltd | 光サイリスタ |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4312107Y1 (enrdf_load_stackoverflow) * | 1966-03-29 | 1968-05-24 | ||
| DE2146178C3 (de) * | 1971-09-15 | 1979-09-27 | Brown, Boveri & Cie Ag, 6800 Mannheim | Thyristor mit Steuerstromverstärkung |
| DE2238486A1 (de) * | 1972-08-04 | 1974-02-14 | Siemens Ag | Thyristor |
| DE2300754A1 (de) * | 1973-01-08 | 1974-07-11 | Siemens Ag | Thyristor |
| JPS502482A (enrdf_load_stackoverflow) * | 1973-05-08 | 1975-01-11 | ||
| JPS5718347B2 (enrdf_load_stackoverflow) * | 1974-01-07 | 1982-04-16 | ||
| GB1499845A (en) * | 1975-03-26 | 1978-02-01 | Mullard Ltd | Thyristors |
| DE2607678A1 (de) * | 1976-02-25 | 1977-09-01 | Siemens Ag | Anordnung zum herabsetzen der freiwerdezeit eines thyristors |
| US4087834A (en) * | 1976-03-22 | 1978-05-02 | General Electric Company | Self-protecting semiconductor device |
| DE2739187C2 (de) * | 1977-08-31 | 1981-10-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Steuerbarer Halbleitergleichrichter mit einer Mehrzahl von Schichten unterschiedlichen Leitfähigkeitstyps |
| DE2928685A1 (de) * | 1978-07-20 | 1980-01-31 | Electric Power Res Inst | Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor |
-
1980
- 1980-05-23 US US06/152,770 patent/US4261000A/en not_active Expired - Lifetime
-
1981
- 1981-05-01 CA CA000376669A patent/CA1160358A/en not_active Expired
- 1981-05-20 DE DE19813120124 patent/DE3120124A1/de active Granted
- 1981-05-21 SE SE8103223A patent/SE451918B/sv not_active IP Right Cessation
- 1981-05-22 CH CH3373/81A patent/CH655204A5/de not_active IP Right Cessation
- 1981-05-22 JP JP7680681A patent/JPS5718361A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5718361A (en) | 1982-01-30 |
| SE8103223L (sv) | 1981-11-24 |
| DE3120124A1 (de) | 1982-03-04 |
| JPH0222547B2 (enrdf_load_stackoverflow) | 1990-05-18 |
| DE3120124C2 (enrdf_load_stackoverflow) | 1993-09-16 |
| US4261000A (en) | 1981-04-07 |
| CA1160358A (en) | 1984-01-10 |
| CH655204A5 (de) | 1986-03-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAL | Patent in force |
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| NUG | Patent has lapsed |
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