SE434588B - Sett for tillverkning av en snabb halvledarlikriktare - Google Patents

Sett for tillverkning av en snabb halvledarlikriktare

Info

Publication number
SE434588B
SE434588B SE7806391A SE7806391A SE434588B SE 434588 B SE434588 B SE 434588B SE 7806391 A SE7806391 A SE 7806391A SE 7806391 A SE7806391 A SE 7806391A SE 434588 B SE434588 B SE 434588B
Authority
SE
Sweden
Prior art keywords
rectifier
time
irradiation
curing
leakage current
Prior art date
Application number
SE7806391A
Other languages
English (en)
Swedish (sv)
Other versions
SE7806391L (sv
Inventor
Y S E Sun
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE7806391L publication Critical patent/SE7806391L/xx
Publication of SE434588B publication Critical patent/SE434588B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/046—Electron beam treatment of devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thyristors (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
SE7806391A 1977-07-11 1978-05-31 Sett for tillverkning av en snabb halvledarlikriktare SE434588B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/814,405 US4137099A (en) 1977-07-11 1977-07-11 Method of controlling leakage currents and reverse recovery time of rectifiers by hot electron irradiation and post-annealing treatments

Publications (2)

Publication Number Publication Date
SE7806391L SE7806391L (sv) 1979-01-12
SE434588B true SE434588B (sv) 1984-07-30

Family

ID=25214968

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7806391A SE434588B (sv) 1977-07-11 1978-05-31 Sett for tillverkning av en snabb halvledarlikriktare

Country Status (9)

Country Link
US (1) US4137099A (nl)
JP (1) JPS58191B2 (nl)
BE (1) BE868869A (nl)
DE (1) DE2829627A1 (nl)
FR (1) FR2397716A1 (nl)
GB (1) GB1587363A (nl)
IT (1) IT1096939B (nl)
NL (1) NL186208C (nl)
SE (1) SE434588B (nl)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2755418A1 (de) * 1977-12-13 1979-06-21 Bosch Gmbh Robert Verfahren zur herstellung eines halbleiter-bauelements
DE3037316C2 (de) * 1979-10-03 1982-12-23 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zur Herstellung von Leistungsthyristoren
US4311534A (en) * 1980-06-27 1982-01-19 Westinghouse Electric Corp. Reducing the reverse recovery charge of thyristors by nuclear irradiation
US4395293A (en) * 1981-03-23 1983-07-26 Hughes Aircraft Company Accelerated annealing of gallium arsenide solar cells
DE3714357C2 (de) * 1986-04-30 1994-02-03 Toshiba Ceramics Co Siliciumwafer und Verfahren zu dessen Herstellung und Siliziumwafer-Auswahleinrichtung
DE3639835A1 (de) * 1986-11-21 1987-04-30 Corneliu Dipl Phys Protop Verfahren zur herstellung von hochgeschwindigkeitshalbleitern
DE19709652C2 (de) * 1997-03-10 1999-09-16 Semikron Elektronik Gmbh Schnelle Leistungsdiode mit einer durch Bestrahlen mit beschleunigten Teilchen erzeugten Mittelzone
KR100342073B1 (ko) * 2000-03-29 2002-07-02 조중열 반도체 소자의 제조 방법
JP2008091705A (ja) * 2006-10-03 2008-04-17 Mitsubishi Electric Corp 半導体装置及びその製造方法
DE102009048773A1 (de) 2009-10-08 2011-04-21 Oxea Deutschland Gmbh Verfahren zur Farbaufhellung von Polyolestern
JP2018006364A (ja) * 2016-06-27 2018-01-11 三菱電機株式会社 電子線照射装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3894890A (en) * 1972-07-17 1975-07-15 Siemens Ag Method for improving the radiation resistance of silicon transistors
US3888701A (en) * 1973-03-09 1975-06-10 Westinghouse Electric Corp Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing
US3933527A (en) * 1973-03-09 1976-01-20 Westinghouse Electric Corporation Fine tuning power diodes with irradiation
US4056408A (en) * 1976-03-17 1977-11-01 Westinghouse Electric Corporation Reducing the switching time of semiconductor devices by nuclear irradiation
US4043836A (en) * 1976-05-03 1977-08-23 General Electric Company Method of manufacturing semiconductor devices
US4047976A (en) * 1976-06-21 1977-09-13 Motorola, Inc. Method for manufacturing a high-speed semiconductor device
JPS5819125B2 (ja) * 1976-08-11 1983-04-16 株式会社日立製作所 半導体装置の製造方法
JPS5395581A (en) * 1977-02-02 1978-08-21 Hitachi Ltd Manufacture for semiconductor device

Also Published As

Publication number Publication date
FR2397716B1 (nl) 1984-04-13
FR2397716A1 (fr) 1979-02-09
JPS5419369A (en) 1979-02-14
NL186208B (nl) 1990-05-01
JPS58191B2 (ja) 1983-01-05
BE868869A (fr) 1978-11-03
DE2829627A1 (de) 1979-01-25
GB1587363A (en) 1981-04-01
NL186208C (nl) 1990-10-01
IT1096939B (it) 1985-08-26
NL7807414A (nl) 1979-01-15
US4137099A (en) 1979-01-30
SE7806391L (sv) 1979-01-12
IT7825430A0 (it) 1978-07-06

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