SE430188B - Metod vid jon-implantation for styrning av ytpotentialen hos ett mal, samt anordning for tillempning av metoden - Google Patents
Metod vid jon-implantation for styrning av ytpotentialen hos ett mal, samt anordning for tillempning av metodenInfo
- Publication number
- SE430188B SE430188B SE7804119A SE7804119A SE430188B SE 430188 B SE430188 B SE 430188B SE 7804119 A SE7804119 A SE 7804119A SE 7804119 A SE7804119 A SE 7804119A SE 430188 B SE430188 B SE 430188B
- Authority
- SE
- Sweden
- Prior art keywords
- target
- ion beam
- electron sources
- current
- cage
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24405—Faraday cages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/794,276 US4135097A (en) | 1977-05-05 | 1977-05-05 | Ion implantation apparatus for controlling the surface potential of a target surface |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7804119L SE7804119L (sv) | 1978-11-06 |
SE430188B true SE430188B (sv) | 1983-10-24 |
Family
ID=25162195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7804119A SE430188B (sv) | 1977-05-05 | 1978-04-12 | Metod vid jon-implantation for styrning av ytpotentialen hos ett mal, samt anordning for tillempning av metoden |
Country Status (10)
Country | Link |
---|---|
US (1) | US4135097A (es) |
JP (1) | JPS5843861B2 (es) |
AU (1) | AU511889B2 (es) |
BE (1) | BE865670A (es) |
BR (1) | BR7802842A (es) |
CA (1) | CA1089113A (es) |
CH (1) | CH627585A5 (es) |
DK (1) | DK153613C (es) |
ES (1) | ES469457A1 (es) |
SE (1) | SE430188B (es) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2740227A1 (de) * | 1977-09-07 | 1979-03-15 | Schwerionenforsch Gmbh | Faraday-tasse zur messung an strahlstroemen eines schwerionenbeschleunigers |
US4247781A (en) * | 1979-06-29 | 1981-01-27 | International Business Machines Corporation | Cooled target disc for high current ion implantation method and apparatus |
US4361762A (en) * | 1980-07-30 | 1982-11-30 | Rca Corporation | Apparatus and method for neutralizing the beam in an ion implanter |
FR2490873A1 (fr) * | 1980-09-24 | 1982-03-26 | Varian Associates | Procede et dispositif destines a produire une neutralisation amelioree d'un faisceau d'ions positifs |
US4463255A (en) * | 1980-09-24 | 1984-07-31 | Varian Associates, Inc. | Apparatus for enhanced neutralization of positively charged ion beam |
JPS5826441A (ja) * | 1981-08-10 | 1983-02-16 | Nippon Telegr & Teleph Corp <Ntt> | イオン注入装置 |
JPS59196600A (ja) * | 1983-04-21 | 1984-11-07 | 工業技術院長 | 中性粒子注入法およびその装置 |
US4595837A (en) * | 1983-09-16 | 1986-06-17 | Rca Corporation | Method for preventing arcing in a device during ion-implantation |
US4786814A (en) * | 1983-09-16 | 1988-11-22 | General Electric Company | Method of reducing electrostatic charge on ion-implanted devices |
JPS62103120A (ja) * | 1985-10-30 | 1987-05-13 | Meiki Co Ltd | 成形品の突出し装置 |
JPS63126220A (ja) * | 1986-11-14 | 1988-05-30 | Mitsubishi Electric Corp | 不純物添加方法 |
JPS63109437U (es) * | 1987-01-06 | 1988-07-14 | ||
JPS63184256A (ja) * | 1987-01-27 | 1988-07-29 | Tokyo Electron Ltd | イオン注入装置 |
US4916311A (en) * | 1987-03-12 | 1990-04-10 | Mitsubishi Denki Kabushiki Kaisha | Ion beaming irradiating apparatus including ion neutralizer |
JPS6410563A (en) * | 1987-07-02 | 1989-01-13 | Sumitomo Eaton Nova | Electric charging suppressor of ion implanter |
US4804837A (en) * | 1988-01-11 | 1989-02-14 | Eaton Corporation | Ion implantation surface charge control method and apparatus |
US4874947A (en) * | 1988-02-26 | 1989-10-17 | Micrion Corporation | Focused ion beam imaging and process control |
JPH01220350A (ja) * | 1988-02-26 | 1989-09-04 | Hitachi Ltd | 帯電抑制方法及びその装置を用いた粒子線照射装置 |
JPH025352A (ja) * | 1988-06-09 | 1990-01-10 | Nec Kyushu Ltd | エレクトロンフラッド |
JP2704438B2 (ja) * | 1989-09-04 | 1998-01-26 | 東京エレクトロン株式会社 | イオン注入装置 |
US5072125A (en) * | 1989-10-05 | 1991-12-10 | Mitsubishi Denki Kabushiki Kaisha | Ion implanter |
US5136171A (en) * | 1990-03-02 | 1992-08-04 | Varian Associates, Inc. | Charge neutralization apparatus for ion implantation system |
US5113074A (en) * | 1991-01-29 | 1992-05-12 | Eaton Corporation | Ion beam potential detection probe |
JP3599373B2 (ja) * | 1993-08-05 | 2004-12-08 | キヤノン株式会社 | イオン注入装置及びイオン注入方法 |
US5475231A (en) * | 1993-09-21 | 1995-12-12 | Honeywell Inc. | Apparatus for monitoring ion beams with an electrically isolated aperture |
GB2343546B (en) * | 1995-11-08 | 2000-06-21 | Applied Materials Inc | An ion implanter with deceleration lens assembly |
US5757018A (en) * | 1995-12-11 | 1998-05-26 | Varian Associates, Inc. | Zero deflection magnetically-suppressed Faraday for ion implanters |
JP3222404B2 (ja) * | 1997-06-20 | 2001-10-29 | 科学技術振興事業団 | 半導体基板表面の絶縁膜の形成方法及びその形成装置 |
WO1999062098A1 (en) * | 1998-05-22 | 1999-12-02 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for low energy ion implantation |
US6300643B1 (en) | 1998-08-03 | 2001-10-09 | Varian Semiconductor Equipment Associates, Inc. | Dose monitor for plasma doping system |
US6020592A (en) * | 1998-08-03 | 2000-02-01 | Varian Semiconductor Equipment Associates, Inc. | Dose monitor for plasma doping system |
US6335536B1 (en) | 1999-10-27 | 2002-01-01 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for low voltage plasma doping using dual pulses |
US6182604B1 (en) | 1999-10-27 | 2001-02-06 | Varian Semiconductor Equipment Associates, Inc. | Hollow cathode for plasma doping system |
US7309997B1 (en) | 2000-09-15 | 2007-12-18 | Varian Semiconductor Equipment Associates, Inc. | Monitor system and method for semiconductor processes |
US6723998B2 (en) | 2000-09-15 | 2004-04-20 | Varian Semiconductor Equipment Associates, Inc. | Faraday system for ion implanters |
US6762423B2 (en) * | 2002-11-05 | 2004-07-13 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for ion beam neutralization in magnets |
US7935393B2 (en) * | 2007-08-07 | 2011-05-03 | Tokyo Electron Limited | Method and system for improving sidewall coverage in a deposition system |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2467224A (en) * | 1948-02-21 | 1949-04-12 | Rca Corp | Neutralization of electrostatic charges in electron-optical instruments |
US2890342A (en) * | 1954-09-29 | 1959-06-09 | Gen Electric | System for charge neutralization |
GB892344A (en) * | 1959-03-18 | 1962-03-28 | Nat Res Dev | Ion source |
US3547074A (en) * | 1967-04-13 | 1970-12-15 | Block Engineering | Apparatus for forming microelements |
US3507709A (en) * | 1967-09-15 | 1970-04-21 | Hughes Aircraft Co | Method of irradiating dielectriccoated semiconductor bodies with low energy electrons |
US3622782A (en) * | 1968-09-16 | 1971-11-23 | Minnesota Mining & Mfg | Blocking apparatus and method utilizing a low-energy ion beam |
US4011449A (en) * | 1975-11-05 | 1977-03-08 | Ibm Corporation | Apparatus for measuring the beam current of charged particle beam |
-
1977
- 1977-05-05 US US05/794,276 patent/US4135097A/en not_active Expired - Lifetime
-
1978
- 1978-03-02 CA CA298,328A patent/CA1089113A/en not_active Expired
- 1978-03-17 AU AU34247/78A patent/AU511889B2/en not_active Expired
- 1978-03-20 JP JP53031163A patent/JPS5843861B2/ja not_active Expired
- 1978-04-04 BE BE186549A patent/BE865670A/xx not_active IP Right Cessation
- 1978-04-06 CH CH368678A patent/CH627585A5/de not_active IP Right Cessation
- 1978-04-12 SE SE7804119A patent/SE430188B/sv not_active IP Right Cessation
- 1978-05-03 DK DK194178A patent/DK153613C/da not_active IP Right Cessation
- 1978-05-04 ES ES469457A patent/ES469457A1/es not_active Expired
- 1978-05-05 BR BR787802842A patent/BR7802842A/pt unknown
Also Published As
Publication number | Publication date |
---|---|
CH627585A5 (de) | 1982-01-15 |
AU3424778A (en) | 1979-09-20 |
BR7802842A (pt) | 1979-01-16 |
JPS5843861B2 (ja) | 1983-09-29 |
US4135097A (en) | 1979-01-16 |
DK153613B (da) | 1988-08-01 |
CA1089113A (en) | 1980-11-04 |
ES469457A1 (es) | 1979-09-16 |
AU511889B2 (en) | 1980-09-11 |
BE865670A (fr) | 1978-07-31 |
DK194178A (da) | 1978-11-06 |
DK153613C (da) | 1988-12-12 |
JPS53136798A (en) | 1978-11-29 |
SE7804119L (sv) | 1978-11-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |
Ref document number: 7804119-1 Effective date: 19931110 Format of ref document f/p: F |