SE424028B - Sammansatt halvledaranordning for en integrerad hogspenningskrets - Google Patents
Sammansatt halvledaranordning for en integrerad hogspenningskretsInfo
- Publication number
- SE424028B SE424028B SE8005704A SE8005704A SE424028B SE 424028 B SE424028 B SE 424028B SE 8005704 A SE8005704 A SE 8005704A SE 8005704 A SE8005704 A SE 8005704A SE 424028 B SE424028 B SE 424028B
- Authority
- SE
- Sweden
- Prior art keywords
- pockets
- layer
- conducting
- transistor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 239000002131 composite material Substances 0.000 title claims description 3
- 239000000463 material Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 12
- 230000000295 complement effect Effects 0.000 description 8
- 239000002800 charge carrier Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Gyroscopes (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/971,632 US4232328A (en) | 1978-12-20 | 1978-12-20 | Dielectrically-isolated integrated circuit complementary transistors for high voltage use |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE8005704L SE8005704L (sv) | 1980-08-13 |
| SE424028B true SE424028B (sv) | 1982-06-21 |
Family
ID=25518630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8005704A SE424028B (sv) | 1978-12-20 | 1980-08-13 | Sammansatt halvledaranordning for en integrerad hogspenningskrets |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US4232328A (OSRAM) |
| JP (1) | JPH0413863B2 (OSRAM) |
| BE (1) | BE880726A (OSRAM) |
| CA (1) | CA1126875A (OSRAM) |
| DE (1) | DE2953394T1 (OSRAM) |
| ES (1) | ES487064A1 (OSRAM) |
| FR (1) | FR2445027A1 (OSRAM) |
| GB (1) | GB2049281A (OSRAM) |
| IT (1) | IT1126601B (OSRAM) |
| NL (1) | NL7920182A (OSRAM) |
| SE (1) | SE424028B (OSRAM) |
| WO (1) | WO1980001335A1 (OSRAM) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1177148A (en) * | 1981-10-06 | 1984-10-30 | Robert J. Mcintyre | Avalanche photodiode array |
| US4631570A (en) * | 1984-07-03 | 1986-12-23 | Motorola, Inc. | Integrated circuit having buried oxide isolation and low resistivity substrate for power supply interconnection |
| US5448100A (en) * | 1985-02-19 | 1995-09-05 | Harris Corporation | Breakdown diode structure |
| JPH01123417A (ja) * | 1987-11-07 | 1989-05-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US5416354A (en) * | 1989-01-06 | 1995-05-16 | Unitrode Corporation | Inverted epitaxial process semiconductor devices |
| EP0462270B1 (en) * | 1990-01-08 | 2000-08-30 | Harris Corporation | Method of using a semiconductor device comprising a substrate having a dielectrically isolated semiconductor island |
| US6375741B2 (en) | 1991-03-06 | 2002-04-23 | Timothy J. Reardon | Semiconductor processing spray coating apparatus |
| JP2654268B2 (ja) * | 1991-05-13 | 1997-09-17 | 株式会社東芝 | 半導体装置の使用方法 |
| US5744851A (en) * | 1992-01-27 | 1998-04-28 | Harris Corporation | Biasing of island-surrounding material to suppress reduction of breakdown voltage due to field plate acting on buried layer/island junction between high and low impurity concentration regions |
| GB2344689A (en) | 1998-12-07 | 2000-06-14 | Ericsson Telefon Ab L M | Analogue switch |
| EP1322951A2 (en) * | 2000-09-20 | 2003-07-02 | Molecular Reflections | Microfabricated ultrasound array for use as resonant sensors |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE24872E (en) * | 1952-12-16 | 1960-09-27 | Collector potential | |
| US3850707A (en) * | 1964-09-09 | 1974-11-26 | Honeywell Inc | Semiconductors |
| US3412295A (en) * | 1965-10-19 | 1968-11-19 | Sprague Electric Co | Monolithic structure with three-region complementary transistors |
| DE1816081A1 (de) * | 1968-12-20 | 1970-06-25 | Siemens Ag | Integrierte Halbleiterschaltungsanordnung |
| GB1258382A (OSRAM) * | 1969-01-16 | 1971-12-30 | ||
| US3628064A (en) * | 1969-03-13 | 1971-12-14 | Signetics Corp | Voltage to frequency converter with constant current sources |
| US3953255A (en) * | 1971-12-06 | 1976-04-27 | Harris Corporation | Fabrication of matched complementary transistors in integrated circuits |
| US3865649A (en) * | 1972-10-16 | 1975-02-11 | Harris Intertype Corp | Fabrication of MOS devices and complementary bipolar transistor devices in a monolithic substrate |
| US3944447A (en) * | 1973-03-12 | 1976-03-16 | Ibm Corporation | Method for fabrication of integrated circuit structure with full dielectric isolation utilizing selective oxidation |
| US3895392A (en) * | 1973-04-05 | 1975-07-15 | Signetics Corp | Bipolar transistor structure having ion implanted region and method |
| US4042949A (en) * | 1974-05-08 | 1977-08-16 | Motorola, Inc. | Semiconductor devices |
| NL7408110A (nl) * | 1974-06-18 | 1975-12-22 | Philips Nv | Halfgeleiderinrichting met complementaire tran- sistorstrukturen en werkwijze ter vervaardiging daarvan. |
| US4146905A (en) * | 1974-06-18 | 1979-03-27 | U.S. Philips Corporation | Semiconductor device having complementary transistor structures and method of manufacturing same |
| US4086610A (en) * | 1974-06-28 | 1978-04-25 | Motorola, Inc. | High reliability epi-base radiation hardened power transistor |
| US3990102A (en) * | 1974-06-28 | 1976-11-02 | Hitachi, Ltd. | Semiconductor integrated circuits and method of manufacturing the same |
-
1978
- 1978-12-20 US US05/971,632 patent/US4232328A/en not_active Expired - Lifetime
-
1979
- 1979-12-06 WO PCT/US1979/001042 patent/WO1980001335A1/en unknown
- 1979-12-06 JP JP55500190A patent/JPH0413863B2/ja not_active Expired
- 1979-12-06 GB GB8025968A patent/GB2049281A/en not_active Withdrawn
- 1979-12-06 DE DE792953394T patent/DE2953394T1/de active Granted
- 1979-12-06 NL NL7920182A patent/NL7920182A/nl unknown
- 1979-12-18 FR FR7930945A patent/FR2445027A1/fr active Granted
- 1979-12-19 ES ES487064A patent/ES487064A1/es not_active Expired
- 1979-12-19 IT IT28204/79A patent/IT1126601B/it active
- 1979-12-19 BE BE0/198639A patent/BE880726A/fr not_active IP Right Cessation
- 1979-12-20 CA CA342,408A patent/CA1126875A/en not_active Expired
-
1980
- 1980-08-13 SE SE8005704A patent/SE424028B/sv not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| ES487064A1 (es) | 1980-09-16 |
| FR2445027A1 (fr) | 1980-07-18 |
| BE880726A (fr) | 1980-04-16 |
| JPH0413863B2 (OSRAM) | 1992-03-11 |
| CA1126875A (en) | 1982-06-29 |
| SE8005704L (sv) | 1980-08-13 |
| IT7928204A0 (it) | 1979-12-19 |
| DE2953394C2 (OSRAM) | 1993-01-07 |
| GB2049281B (OSRAM) | |
| FR2445027B1 (OSRAM) | 1984-03-09 |
| IT1126601B (it) | 1986-05-21 |
| JPS55501040A (OSRAM) | 1980-11-27 |
| GB2049281A (en) | 1980-12-17 |
| WO1980001335A1 (en) | 1980-06-26 |
| NL7920182A (nl) | 1980-10-31 |
| US4232328A (en) | 1980-11-04 |
| DE2953394T1 (de) | 1981-01-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
Ref document number: 8005704-5 Effective date: 19910704 Format of ref document f/p: F |