SE418917B - Halvledarminne - Google Patents
HalvledarminneInfo
- Publication number
- SE418917B SE418917B SE7802625A SE7802625A SE418917B SE 418917 B SE418917 B SE 418917B SE 7802625 A SE7802625 A SE 7802625A SE 7802625 A SE7802625 A SE 7802625A SE 418917 B SE418917 B SE 418917B
- Authority
- SE
- Sweden
- Prior art keywords
- semiconductor
- pits
- electrons
- layers
- holes
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims description 28
- 239000007787 solid Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims description 140
- 239000000463 material Substances 0.000 claims description 69
- 238000003860 storage Methods 0.000 claims description 39
- 238000010586 diagram Methods 0.000 claims description 36
- 229910045601 alloy Inorganic materials 0.000 claims description 19
- 239000000956 alloy Substances 0.000 claims description 19
- 239000002800 charge carrier Substances 0.000 claims description 11
- 230000007704 transition Effects 0.000 claims description 8
- 230000000737 periodic effect Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 3
- 230000006798 recombination Effects 0.000 claims description 3
- 238000005215 recombination Methods 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 2
- 238000005275 alloying Methods 0.000 claims description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 1
- 239000005447 environmental material Substances 0.000 claims 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 1
- 230000002441 reversible effect Effects 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 230000000717 retained effect Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 210000000981 epithelium Anatomy 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 235000021251 pulses Nutrition 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 2
- 244000046052 Phaseolus vulgaris Species 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000012217 deletion Methods 0.000 description 2
- 230000037430 deletion Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000002147 killing effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004091 panning Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 210000003625 skull Anatomy 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/06—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using magneto-optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
- H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
- H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
- H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
- H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
- H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
- H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/812—Charge-trapping diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/926—Elongated lead extending axially through another elongated lead
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Shift Register Type Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/805,068 US4103312A (en) | 1977-06-09 | 1977-06-09 | Semiconductor memory devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7802625L SE7802625L (sv) | 1978-12-10 |
| SE418917B true SE418917B (sv) | 1981-06-29 |
Family
ID=25190599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7802625A SE418917B (sv) | 1977-06-09 | 1978-03-08 | Halvledarminne |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4103312A (it) |
| JP (1) | JPS544539A (it) |
| DE (1) | DE2803795A1 (it) |
| FR (1) | FR2394142A1 (it) |
| GB (1) | GB1595878A (it) |
| IT (1) | IT1111167B (it) |
| NL (1) | NL7806183A (it) |
| SE (1) | SE418917B (it) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4194935A (en) * | 1978-04-24 | 1980-03-25 | Bell Telephone Laboratories, Incorporated | Method of making high mobility multilayered heterojunction devices employing modulated doping |
| US4163237A (en) * | 1978-04-24 | 1979-07-31 | Bell Telephone Laboratories, Incorporated | High mobility multilayered heterojunction devices employing modulated doping |
| USRE33671E (en) * | 1978-04-24 | 1991-08-20 | At&T Bell Laboratories | Method of making high mobility multilayered heterojunction device employing modulated doping |
| US4250515A (en) * | 1978-06-09 | 1981-02-10 | The United States Of America As Represented By The Secretary Of The Army | Heterojunction superlattice with potential well depth greater than half the bandgap |
| US4163238A (en) * | 1978-06-09 | 1979-07-31 | The United States Of America As Represented By The Secretary Of The Army | Infrared semiconductor device with superlattice region |
| US4208667A (en) * | 1978-06-09 | 1980-06-17 | The United States Of America As Represented By The Secretary Of The Army | Controlled absorption in heterojunction structures |
| US4205331A (en) * | 1978-06-09 | 1980-05-27 | The United States Of America As Represented By The Secretary Of The Army | Infrared optical devices of layered structure |
| US4198644A (en) * | 1978-06-09 | 1980-04-15 | The United States Of America As Represented By The Secretary Of The Army | Tunnel diode |
| US4203124A (en) * | 1978-10-06 | 1980-05-13 | Bell Telephone Laboratories, Incorporated | Low noise multistage avalanche photodetector |
| US4257055A (en) * | 1979-07-26 | 1981-03-17 | University Of Illinois Foundation | Negative resistance heterojunction devices |
| US4250516A (en) * | 1979-08-06 | 1981-02-10 | Bell Telephone Laboratories, Incorporated | Multistage avalanche photodetector |
| US4348686A (en) * | 1980-07-28 | 1982-09-07 | The United States Of America As Represented By The Secretary Of The Army | Microwave-infrared detector with semiconductor superlattice region |
| US4361814A (en) * | 1980-09-29 | 1982-11-30 | Rockwell International Corporation | Distributed optical parametric amplifier |
| JPS5851568A (ja) * | 1981-09-22 | 1983-03-26 | Nec Corp | 半導体装置 |
| US4553317A (en) * | 1981-11-09 | 1985-11-19 | Canon Kabushiki Kaisha | Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors |
| US4486765A (en) * | 1981-12-07 | 1984-12-04 | At&T Bell Laboratories | Avalanche photodetector including means for separating electrons and holes |
| US4503447A (en) * | 1982-07-16 | 1985-03-05 | The United States Of America As Represented By The Secretary Of The Army | Multi-dimensional quantum well device |
| US4719496A (en) * | 1982-11-24 | 1988-01-12 | Federico Capasso | Repeated velocity overshoot semiconductor device |
| US4665504A (en) * | 1982-11-26 | 1987-05-12 | The British Petroleum Company | Memory device containing electrically conducting substrate having deposited hereon a layer of amorphous or microcrystalline silicon-carbon alloy and a layer of amorphous or microcrystalline silicon-containing material |
| NL8301187A (nl) * | 1983-04-05 | 1984-11-01 | Philips Nv | Halfgeleiderinrichting voor het opwekken van elektromagnetische straling. |
| JPS6028268A (ja) * | 1983-07-26 | 1985-02-13 | Agency Of Ind Science & Technol | 半導体装置 |
| US4575924A (en) * | 1984-07-02 | 1986-03-18 | Texas Instruments Incorporated | Process for fabricating quantum-well devices utilizing etch and refill techniques |
| US4665412A (en) * | 1985-06-19 | 1987-05-12 | Ga Technologies Inc. | Coupled heterostructure superlattice devices |
| US4672405A (en) * | 1985-08-23 | 1987-06-09 | Bell Communications Research, Inc. | Multiple quantum well frequency multiplier circuit |
| US4783427A (en) * | 1986-02-18 | 1988-11-08 | Texas Instruments Incorporated | Process for fabricating quantum-well devices |
| FR2595509B1 (fr) * | 1986-03-07 | 1988-05-13 | Thomson Csf | Composant en materiau semiconducteur epitaxie sur un substrat a parametre de maille different et application a divers composants en semiconducteurs |
| JP2508637B2 (ja) * | 1986-05-20 | 1996-06-19 | 日本電気株式会社 | 半導体素子 |
| US5010517A (en) * | 1987-11-18 | 1991-04-23 | Hitachi, Ltd. | Semiconductor optical apparatus |
| JP3020529B2 (ja) * | 1989-12-29 | 2000-03-15 | 富士通株式会社 | 光駆動量子化装置 |
| US5465249A (en) * | 1991-11-26 | 1995-11-07 | Cree Research, Inc. | Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate |
| US5677637A (en) * | 1992-03-25 | 1997-10-14 | Hitachi, Ltd. | Logic device using single electron coulomb blockade techniques |
| GB9226382D0 (en) * | 1992-12-18 | 1993-02-10 | Hitachi Europ Ltd | Memory device |
| JP4854975B2 (ja) * | 1995-04-28 | 2012-01-18 | 富士通株式会社 | 光半導体記憶装置の書込み読出し方法 |
| US8394683B2 (en) * | 2008-01-15 | 2013-03-12 | Micron Technology, Inc. | Methods of forming semiconductor constructions, and methods of forming NAND unit cells |
| US8053982B2 (en) * | 2008-04-30 | 2011-11-08 | Hewlett-Packard Development Company, L.P. | Light-emitting diodes with carrier extraction electrodes |
| DE102011006782A1 (de) * | 2011-04-05 | 2012-10-11 | Technische Universität Berlin | Speicherzelle |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3626257A (en) * | 1969-04-01 | 1971-12-07 | Ibm | Semiconductor device with superlattice region |
| US3626328A (en) * | 1969-04-01 | 1971-12-07 | Ibm | Semiconductor bulk oscillator |
| US3721583A (en) * | 1970-12-08 | 1973-03-20 | Ibm | Vapor phase epitaxial deposition process for forming superlattice structure |
| DE2139436A1 (de) * | 1971-08-06 | 1973-02-22 | Licentia Gmbh | Halbleiterlaser |
| DE2261527C2 (de) * | 1972-12-15 | 1983-04-21 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | Halbleiterkörper mit in einer vorgegebenen Richtung abwechselnd aufeinanderfolgenden n- und p-dotierten Zonen, Verfahren zu seiner Herstellung und Verwendungen des Halbleiterkörpers |
| US3893148A (en) * | 1974-02-25 | 1975-07-01 | Us Navy | Layered superlattic switching and negative resistance devices |
| US3929527A (en) * | 1974-06-11 | 1975-12-30 | Us Army | Molecular beam epitaxy of alternating metal-semiconductor films |
-
1977
- 1977-06-09 US US05/805,068 patent/US4103312A/en not_active Expired - Lifetime
-
1978
- 1978-01-28 DE DE19782803795 patent/DE2803795A1/de not_active Withdrawn
- 1978-02-01 FR FR787803452A patent/FR2394142A1/fr active Granted
- 1978-02-03 JP JP1060378A patent/JPS544539A/ja active Granted
- 1978-02-28 GB GB7891/78A patent/GB1595878A/en not_active Expired
- 1978-03-03 IT IT20837/78A patent/IT1111167B/it active
- 1978-03-08 SE SE7802625A patent/SE418917B/sv unknown
- 1978-06-07 NL NL7806183A patent/NL7806183A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| FR2394142A1 (fr) | 1979-01-05 |
| FR2394142B1 (it) | 1983-10-07 |
| NL7806183A (nl) | 1978-12-12 |
| DE2803795A1 (de) | 1978-12-14 |
| US4103312A (en) | 1978-07-25 |
| IT1111167B (it) | 1986-01-13 |
| JPS544539A (en) | 1979-01-13 |
| GB1595878A (en) | 1981-08-19 |
| JPS5723353B2 (it) | 1982-05-18 |
| IT7820837A0 (it) | 1978-03-03 |
| SE7802625L (sv) | 1978-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4103312A (en) | Semiconductor memory devices | |
| Ruberto et al. | Time‐dependent open‐circuit voltage in CuInSe2/CdS solar cells: Theory and experiment | |
| Godlewski et al. | Low-high junction theory applied to solar cells | |
| Metzger et al. | Analysis of charge separation dynamics in a semiconductor junction | |
| DD272695A1 (de) | Verfahren und anlage zur schichtdickebestimmung bei halbleiter-schichtkonstruktionen | |
| Norris | Dislocation loop growth in an electron irradiated thin foil | |
| Ahrenkiel | The effect of deep states on the photovoltaic performance of CdZnS/CuInSe2 thin film devices | |
| CN108807666B (zh) | 一种阻变存储器的机理的研究方法 | |
| US3697873A (en) | Method for determining excess carrier lifetime in semiconductor devices | |
| Peinke et al. | Positive and negative differential resistance in electrical conductors | |
| Veloric et al. | High-voltage conductivity-modulated silicon rectifier | |
| Fastow et al. | Shockley–Read recombination and trapping in p‐type HgCdTe | |
| Osak et al. | Investigation of IV characteristics in polycrystalline BaTiO3 | |
| Nägelein et al. | Multi-probe electrical characterization of nanowires for solar energy conversion | |
| Seifert et al. | Imaging of spatial structures in superconducting tunnel junctions by electron-beam scanning | |
| Martínez-Herraiz et al. | Electrostatic force microscopy study of the electrical properties of cadmium zinc telluride crystal surfaces after low energy argon irradiation at different substrate temperatures | |
| Fujibayashi | Electronic properties of very thin graphite crystals | |
| JP7185879B2 (ja) | 半導体試料の評価方法 | |
| Diesinger et al. | Submicron nickel deposition on silicon from an electrolytic solution controlled by near-field optics | |
| He et al. | Design and fabrication of integrated negative feedback resistor for InGaAs/InP avalanche photodiode | |
| Zhang et al. | Energy-level splitting of ligand-stabilized Au 55 clusters observed by scanning tunneling spectroscopy | |
| Wernersson et al. | Kinetics of electron charging and discharging on embedded W disks in GaAs | |
| Gaman et al. | Thin-film diodes using chalcogenide glass | |
| Mialhe et al. | Experimental determination of minority carrier lifetime in solar cells using transient measurements | |
| Berg | Occupation dynamics of self-assembled quantum dots and deep level traps |