SE405292B - Kapacitiv minnescell - Google Patents
Kapacitiv minnescellInfo
- Publication number
- SE405292B SE405292B SE7603695A SE7603695A SE405292B SE 405292 B SE405292 B SE 405292B SE 7603695 A SE7603695 A SE 7603695A SE 7603695 A SE7603695 A SE 7603695A SE 405292 B SE405292 B SE 405292B
- Authority
- SE
- Sweden
- Prior art keywords
- memory cell
- capacitive memory
- capacitive
- cell
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US56522775A | 1975-04-04 | 1975-04-04 | |
| US05/642,191 US4030083A (en) | 1975-04-04 | 1975-12-18 | Self-refreshed capacitor memory cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7603695L SE7603695L (sv) | 1976-10-05 |
| SE405292B true SE405292B (sv) | 1978-11-27 |
Family
ID=27073799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7603695A SE405292B (sv) | 1975-04-04 | 1976-03-26 | Kapacitiv minnescell |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4030083A (es) |
| JP (1) | JPS51123021A (es) |
| DD (1) | DD124755A5 (es) |
| DE (1) | DE2613497A1 (es) |
| ES (1) | ES446660A1 (es) |
| FR (1) | FR2306506A1 (es) |
| GB (1) | GB1542324A (es) |
| IT (1) | IT1058941B (es) |
| NL (1) | NL7603266A (es) |
| SE (1) | SE405292B (es) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4122550A (en) * | 1978-02-08 | 1978-10-24 | Intel Corporation | Low power random access memory with self-refreshing cells |
| US4292677A (en) * | 1980-01-07 | 1981-09-29 | Bell Telephone Laboratories, Incorporated | Self-refreshed capacitor memory cell |
| US4399521A (en) * | 1980-09-26 | 1983-08-16 | Nippon Electric Co., Ltd. | Monolithic integrated circuit |
| US4363110A (en) * | 1980-12-22 | 1982-12-07 | International Business Machines Corp. | Non-volatile dynamic RAM cell |
| US4446535A (en) * | 1981-12-31 | 1984-05-01 | International Business Machines Corporation | Non-inverting non-volatile dynamic RAM cell |
| JPS6074880U (ja) * | 1983-10-28 | 1985-05-25 | 木元 通▲たけ▼ | 管継目目合せ矯正装置 |
| US5003361A (en) * | 1987-08-31 | 1991-03-26 | At&T Bell Laboratories | Active dynamic memory cell |
| US5270967A (en) * | 1991-01-16 | 1993-12-14 | National Semiconductor Corporation | Refreshing ferroelectric capacitors |
| JP2509764B2 (ja) * | 1991-05-17 | 1996-06-26 | 株式会社東芝 | ダイナミック型メモリセルおよびダイナミック型メモリ |
| US6686729B1 (en) | 2002-10-15 | 2004-02-03 | Texas Instruments Incorporated | DC/DC switching regulator having reduced switching loss |
| CN2719043Y (zh) | 2004-04-14 | 2005-08-24 | 韩力 | 雾化电子烟 |
| KR102094131B1 (ko) * | 2010-02-05 | 2020-03-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치를 구동하는 방법 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3582909A (en) * | 1969-03-07 | 1971-06-01 | North American Rockwell | Ratioless memory circuit using conditionally switched capacitor |
| US3699544A (en) * | 1971-05-26 | 1972-10-17 | Gen Electric | Three transistor memory cell |
| US3705392A (en) * | 1971-09-07 | 1972-12-05 | Texas Instruments Inc | Mos dynamic memory |
| US3753248A (en) * | 1972-06-09 | 1973-08-14 | Bell Telephone Labor Inc | Two-terminal nondestructive read jfet-npn transistor semiconductor memory |
| US3878404A (en) * | 1972-10-30 | 1975-04-15 | Electronic Arrays | Integrated circuit of the MOS variety |
| US3795898A (en) * | 1972-11-03 | 1974-03-05 | Advanced Memory Syst | Random access read/write semiconductor memory |
| US3858184A (en) * | 1973-01-22 | 1974-12-31 | Monolithic Syst Corp | Automatic non-interrupting refresh technique |
| US3858185A (en) * | 1973-07-18 | 1974-12-31 | Intel Corp | An mos dynamic memory array & refreshing system |
| US3876993A (en) * | 1974-03-25 | 1975-04-08 | Texas Instruments Inc | Random access memory cell |
| US3968480A (en) * | 1974-04-25 | 1976-07-06 | Honeywell Inc. | Memory cell |
| US3955181A (en) * | 1974-11-19 | 1976-05-04 | Texas Instruments Incorporated | Self-refreshing random access memory cell |
-
1975
- 1975-12-18 US US05/642,191 patent/US4030083A/en not_active Expired - Lifetime
-
1976
- 1976-03-26 SE SE7603695A patent/SE405292B/xx unknown
- 1976-03-29 NL NL7603266A patent/NL7603266A/xx not_active Application Discontinuation
- 1976-03-30 DE DE19762613497 patent/DE2613497A1/de active Granted
- 1976-03-31 FR FR7609326A patent/FR2306506A1/fr active Granted
- 1976-04-01 GB GB7613329A patent/GB1542324A/en not_active Expired
- 1976-04-02 ES ES446660A patent/ES446660A1/es not_active Expired
- 1976-04-02 IT IT21869/76A patent/IT1058941B/it active
- 1976-04-02 DD DD192184A patent/DD124755A5/xx unknown
- 1976-04-05 JP JP51037321A patent/JPS51123021A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DD124755A5 (es) | 1977-03-09 |
| ES446660A1 (es) | 1977-10-16 |
| US4030083A (en) | 1977-06-14 |
| GB1542324A (en) | 1979-03-14 |
| NL7603266A (nl) | 1976-10-06 |
| FR2306506A1 (fr) | 1976-10-29 |
| FR2306506B1 (es) | 1980-06-20 |
| SE7603695L (sv) | 1976-10-05 |
| DE2613497A1 (de) | 1976-10-21 |
| DE2613497B2 (es) | 1979-10-31 |
| DE2613497C3 (es) | 1980-07-17 |
| JPS561716B2 (es) | 1981-01-14 |
| JPS51123021A (en) | 1976-10-27 |
| IT1058941B (it) | 1982-05-10 |
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