SE402185B - Styrd halvledarlikriktare - Google Patents
Styrd halvledarlikriktareInfo
- Publication number
- SE402185B SE402185B SE7413032A SE7413032A SE402185B SE 402185 B SE402185 B SE 402185B SE 7413032 A SE7413032 A SE 7413032A SE 7413032 A SE7413032 A SE 7413032A SE 402185 B SE402185 B SE 402185B
- Authority
- SE
- Sweden
- Prior art keywords
- controlled semiconductor
- semiconductor
- controlled
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Rectifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11590973A JPS5413959B2 ( ) | 1973-10-17 | 1973-10-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7413032L SE7413032L ( ) | 1975-04-18 |
| SE402185B true SE402185B (sv) | 1978-06-19 |
Family
ID=14674197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7413032A SE402185B (sv) | 1973-10-17 | 1974-10-16 | Styrd halvledarlikriktare |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4016591A ( ) |
| JP (1) | JPS5413959B2 ( ) |
| DE (1) | DE2449089C3 ( ) |
| SE (1) | SE402185B ( ) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5927108B2 (ja) * | 1975-02-07 | 1984-07-03 | 株式会社日立製作所 | 半導体制御整流装置 |
| ZA775629B (en) * | 1976-10-29 | 1978-08-30 | Westinghouse Electric Corp | An improvement in or relating to thyristor fired by collapsing voltage |
| JPS5939909B2 (ja) * | 1978-03-31 | 1984-09-27 | 株式会社東芝 | 半導体装置 |
| US4577210A (en) * | 1982-08-12 | 1986-03-18 | International Rectifier Corporation | Controlled rectifier having ring gate with internal protrusion for dV/dt control |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3372318A (en) * | 1965-01-22 | 1968-03-05 | Gen Electric | Semiconductor switches |
| GB1174899A (en) * | 1966-04-15 | 1969-12-17 | Westinghouse Brake & Signal | Improvements relating to Controllable Rectifier Devices |
| JPS438333Y1 ( ) * | 1967-05-02 | 1968-04-13 | ||
| US3573572A (en) * | 1968-09-23 | 1971-04-06 | Int Rectifier Corp | Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current |
| US3731162A (en) * | 1969-09-25 | 1973-05-01 | Tokyo Shibaura Electric Co | Semiconductor switching device |
| US3879744A (en) * | 1971-07-06 | 1975-04-22 | Silec Semi Conducteurs | Bidirectional thyristor |
| DE2157091C3 (de) * | 1971-11-17 | 1979-02-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor mit integrierter Diode |
| JPS539516B2 ( ) * | 1971-12-29 | 1978-04-06 |
-
1973
- 1973-10-17 JP JP11590973A patent/JPS5413959B2/ja not_active Expired
-
1974
- 1974-10-15 US US05/515,029 patent/US4016591A/en not_active Expired - Lifetime
- 1974-10-15 DE DE2449089A patent/DE2449089C3/de not_active Expired
- 1974-10-16 SE SE7413032A patent/SE402185B/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US4016591A (en) | 1977-04-05 |
| DE2449089B2 (de) | 1977-04-14 |
| JPS5413959B2 ( ) | 1979-06-04 |
| DE2449089C3 (de) | 1983-12-08 |
| SE7413032L ( ) | 1975-04-18 |
| DE2449089A1 (de) | 1975-04-30 |
| JPS5068283A ( ) | 1975-06-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
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