SE384948B - Integrerad halvledaranordning med en halvledarkropp i vilken finns atminstone ett flerskikts halvledarkretselement omgivet av en skalformad isoleringszon - Google Patents

Integrerad halvledaranordning med en halvledarkropp i vilken finns atminstone ett flerskikts halvledarkretselement omgivet av en skalformad isoleringszon

Info

Publication number
SE384948B
SE384948B SE7307492A SE7307492A SE384948B SE 384948 B SE384948 B SE 384948B SE 7307492 A SE7307492 A SE 7307492A SE 7307492 A SE7307492 A SE 7307492A SE 384948 B SE384948 B SE 384948B
Authority
SE
Sweden
Prior art keywords
semiconductor
atminstone
shell
circuit element
shaped insulation
Prior art date
Application number
SE7307492A
Other languages
English (en)
Swedish (sv)
Inventor
E A Aagaard
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE384948B publication Critical patent/SE384948B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
SE7307492A 1972-05-31 1973-05-28 Integrerad halvledaranordning med en halvledarkropp i vilken finns atminstone ett flerskikts halvledarkretselement omgivet av en skalformad isoleringszon SE384948B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7207325A NL7207325A (fr) 1972-05-31 1972-05-31

Publications (1)

Publication Number Publication Date
SE384948B true SE384948B (sv) 1976-05-24

Family

ID=19816170

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7307492A SE384948B (sv) 1972-05-31 1973-05-28 Integrerad halvledaranordning med en halvledarkropp i vilken finns atminstone ett flerskikts halvledarkretselement omgivet av en skalformad isoleringszon

Country Status (9)

Country Link
JP (1) JPS5112994B2 (fr)
AU (1) AU475239B2 (fr)
CA (1) CA970474A (fr)
DE (1) DE2326672A1 (fr)
FR (1) FR2186740B1 (fr)
GB (1) GB1427261A (fr)
IT (1) IT987932B (fr)
NL (1) NL7207325A (fr)
SE (1) SE384948B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52161311U (fr) * 1976-05-31 1977-12-07
DE2835930C2 (de) * 1978-08-17 1986-07-17 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte Halbleiterschaltungsanordnung mit mindestens einem Lateraltransistor
FR2533366B1 (fr) * 1982-09-21 1986-01-03 Trt Telecom Radio Electr Procede de realisation de transistors par integration monolithique sur un substrat semiconducteur
DE3484747D1 (de) * 1983-12-05 1991-08-01 Gen Electric Halbleitersubstrat mit einer elektrisch isolierten halbleiteranordnung.
US5216447A (en) * 1989-01-13 1993-06-01 Canon Kabushiki Kaisha Recording head

Also Published As

Publication number Publication date
AU5617473A (en) 1974-11-28
JPS4944683A (fr) 1974-04-26
IT987932B (it) 1975-03-20
GB1427261A (en) 1976-03-10
FR2186740A1 (fr) 1974-01-11
AU475239B2 (en) 1976-08-19
NL7207325A (fr) 1973-12-04
FR2186740B1 (fr) 1978-01-06
CA970474A (en) 1975-07-01
JPS5112994B2 (fr) 1976-04-23
DE2326672A1 (de) 1973-12-20

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