SE372376B - - Google Patents

Info

Publication number
SE372376B
SE372376B SE7101452A SE145271A SE372376B SE 372376 B SE372376 B SE 372376B SE 7101452 A SE7101452 A SE 7101452A SE 145271 A SE145271 A SE 145271A SE 372376 B SE372376 B SE 372376B
Authority
SE
Sweden
Application number
SE7101452A
Inventor
T Mayhew
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE372376B publication Critical patent/SE372376B/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096Synchronous circuits, i.e. using clock signals
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits
    • H01L27/11803Masterslice integrated circuits using field effect technology
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01Modifications for accelerating switching
    • H03K19/017Modifications for accelerating switching in field-effect transistor circuits
SE7101452A 1967-06-23 1968-05-31 SE372376B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US648449A US3365707A (en) 1967-06-23 1967-06-23 Lsi array and standard cells

Publications (1)

Publication Number Publication Date
SE372376B true SE372376B (xx) 1974-12-16

Family

ID=24600822

Family Applications (3)

Application Number Title Priority Date Filing Date
SE7101453A SE372377B (xx) 1967-06-23 1968-05-31
SE07344/68A SE350877B (xx) 1967-06-23 1968-05-31
SE7101452A SE372376B (xx) 1967-06-23 1968-05-31

Family Applications Before (2)

Application Number Title Priority Date Filing Date
SE7101453A SE372377B (xx) 1967-06-23 1968-05-31
SE07344/68A SE350877B (xx) 1967-06-23 1968-05-31

Country Status (7)

Country Link
US (1) US3365707A (xx)
JP (3) JPS5024597B1 (xx)
DE (1) DE1765632B2 (xx)
ES (1) ES355284A1 (xx)
FR (1) FR1571710A (xx)
GB (1) GB1209268A (xx)
SE (3) SE372377B (xx)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3569729A (en) * 1966-07-05 1971-03-09 Hayakawa Denki Kogyo Kk Integrated fet structure with substrate biasing means to effect bidirectional transistor operation
US3573488A (en) * 1967-09-05 1971-04-06 Rca Corp Electrical system and lsi standard cells
US3772536A (en) * 1967-09-20 1973-11-13 Trw Inc Digital cell for large scale integration
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry
US3983619A (en) * 1968-01-26 1976-10-05 Hitachi, Ltd. Large scale integrated circuit array of unit cells and method of manufacturing same
US3478229A (en) * 1968-04-29 1969-11-11 American Micro Syst Multifunction circuit device
US3513365A (en) * 1968-06-24 1970-05-19 Mark W Levi Field-effect integrated circuit and method of fabrication
US3533089A (en) * 1969-05-16 1970-10-06 Shell Oil Co Single-rail mosfet memory with capacitive storage
US3638202A (en) * 1970-03-19 1972-01-25 Bell Telephone Labor Inc Access circuit arrangement for equalized loading in integrated circuit arrays
US3604944A (en) * 1970-04-09 1971-09-14 Hughes Aircraft Co Mosfet comparator circuit
US3704454A (en) * 1970-05-18 1972-11-28 Electronic Arrays Accessing system for and in integrated circuit type memories
US3659275A (en) * 1970-06-08 1972-04-25 Cogar Corp Memory correction redundancy system
US3983023A (en) * 1971-03-30 1976-09-28 Ibm Corporation Integrated semiconductor circuit master-slice structure in which the insulation layer beneath unused contact terminals is free of short-circuits
US3808475A (en) * 1972-07-10 1974-04-30 Amdahl Corp Lsi chip construction and method
JPS4968634A (xx) * 1972-11-06 1974-07-03
US3861023A (en) * 1973-04-30 1975-01-21 Hughes Aircraft Co Fully repairable integrated circuit interconnections
GB1447675A (en) * 1973-11-23 1976-08-25 Mullard Ltd Semiconductor devices
US3942164A (en) * 1975-01-30 1976-03-02 Semi, Inc. Sense line coupling reduction system
US4034242A (en) * 1975-08-25 1977-07-05 Teletype Corporation Logic circuits and on-chip four phase FET clock generator made therefrom
US4006467A (en) * 1975-11-14 1977-02-01 Honeywell Information Systems, Inc. Error-correctible bit-organized RAM system
US4161662A (en) * 1976-01-22 1979-07-17 Motorola, Inc. Standardized digital logic chip
US4240094A (en) * 1978-03-20 1980-12-16 Harris Corporation Laser-configured logic array
CA1116307A (en) * 1978-04-01 1982-01-12 Stephen J. Boardman Semi-conductor structures
US4356504A (en) * 1980-03-28 1982-10-26 International Microcircuits, Inc. MOS Integrated circuit structure for discretionary interconnection
JPS57124463A (en) * 1981-01-26 1982-08-03 Nec Corp Semiconductor device
JPS5884445A (ja) * 1981-11-16 1983-05-20 Hitachi Ltd 大規模集積回路
US4583111A (en) * 1983-09-09 1986-04-15 Fairchild Semiconductor Corporation Integrated circuit chip wiring arrangement providing reduced circuit inductance and controlled voltage gradients
JPH0758761B2 (ja) * 1983-12-30 1995-06-21 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体集積回路チップ
US4737836A (en) * 1983-12-30 1988-04-12 International Business Machines Corporation VLSI integrated circuit having parallel bonding areas
JPS6145491A (ja) * 1984-08-10 1986-03-05 Fujitsu Ltd 半導体記憶装置
JPS6333929A (ja) * 1986-07-29 1988-02-13 Mitsubishi Electric Corp A/dコンバ−タ
US5185283A (en) * 1987-10-22 1993-02-09 Matsushita Electronics Corporation Method of making master slice type integrated circuit device
GB2215124A (en) * 1988-02-16 1989-09-13 Stc Plc Integrated circuit underpasses
US5340767A (en) * 1991-06-25 1994-08-23 Texas Instruments Incorporated Method of forming and selectively coupling a plurality of modules on an integrated circuit chip

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL298196A (xx) * 1962-09-22
US3312871A (en) * 1964-12-23 1967-04-04 Ibm Interconnection arrangement for integrated circuits

Also Published As

Publication number Publication date
DE1765632A1 (de) 1972-04-13
SE372377B (xx) 1974-12-16
SE350877B (xx) 1972-11-06
US3365707A (en) 1968-01-23
FR1571710A (xx) 1969-06-20
JPS5019225B1 (xx) 1975-07-04
JPS5120268B1 (xx) 1976-06-23
DE1765632B2 (de) 1972-11-23
JPS5024597B1 (xx) 1975-08-16
GB1209268A (en) 1970-10-21
ES355284A1 (es) 1969-12-01

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