SE366227B - - Google Patents

Info

Publication number
SE366227B
SE366227B SE02166/71A SE216671A SE366227B SE 366227 B SE366227 B SE 366227B SE 02166/71 A SE02166/71 A SE 02166/71A SE 216671 A SE216671 A SE 216671A SE 366227 B SE366227 B SE 366227B
Authority
SE
Sweden
Application number
SE02166/71A
Inventor
G Rosenberger
H Soehlbrand
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE366227B publication Critical patent/SE366227B/xx

Links

Classifications

    • H10P32/141
    • H10P32/171
SE02166/71A 1970-02-19 1971-02-19 SE366227B (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2007752A DE2007752B2 (de) 1970-02-19 1970-02-19 Verfahren zum Herstellen von dotiertem Halbleitermaterial

Publications (1)

Publication Number Publication Date
SE366227B true SE366227B (OSRAM) 1974-04-22

Family

ID=5762769

Family Applications (1)

Application Number Title Priority Date Filing Date
SE02166/71A SE366227B (OSRAM) 1970-02-19 1971-02-19

Country Status (8)

Country Link
JP (1) JPS5338597B1 (OSRAM)
AT (1) AT338335B (OSRAM)
CH (1) CH519249A (OSRAM)
DE (1) DE2007752B2 (OSRAM)
FR (1) FR2080610B1 (OSRAM)
GB (1) GB1289432A (OSRAM)
NL (1) NL7102176A (OSRAM)
SE (1) SE366227B (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2262021C2 (de) * 1972-12-19 1982-12-30 Degussa Ag, 6000 Frankfurt Verfahren zur Dotierung von Halbleitersilicium
EP0104412B1 (en) * 1982-09-23 1988-01-07 Allied Corporation Polymeric boron-nitrogen dopant
JPH01135017A (ja) * 1987-11-20 1989-05-26 Fujitsu Ltd 半導体装置の製造方法
DE4013929C2 (de) * 1989-05-02 1995-12-07 Toshiba Kawasaki Kk Verfahren zum Einbringen von Störstoffen in eine Halbleitermaterial-Schicht beim Herstellen eines Halbleiterbauelements und Anwendung des Verfahrens

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3084079A (en) * 1960-10-13 1963-04-02 Pacific Semiconductors Inc Manufacture of semiconductor devices
US3355291A (en) * 1963-10-08 1967-11-28 Texas Instruments Inc Application of glass to semiconductor devices
US3514348A (en) * 1967-05-10 1970-05-26 Ncr Co Method for making semiconductor devices
JPS4822536B1 (OSRAM) * 1969-03-20 1973-07-06

Also Published As

Publication number Publication date
DE2007752C3 (OSRAM) 1979-04-05
NL7102176A (OSRAM) 1971-08-23
JPS5338597B1 (OSRAM) 1978-10-16
CH519249A (de) 1972-02-15
DE2007752B2 (de) 1978-07-27
DE2007752A1 (de) 1971-08-26
ATA82571A (de) 1976-12-15
GB1289432A (OSRAM) 1972-09-20
FR2080610A1 (OSRAM) 1971-11-19
FR2080610B1 (OSRAM) 1976-04-16
AT338335B (de) 1977-08-25

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