SE320729B - - Google Patents

Info

Publication number
SE320729B
SE320729B SE7485/68A SE748568A SE320729B SE 320729 B SE320729 B SE 320729B SE 7485/68 A SE7485/68 A SE 7485/68A SE 748568 A SE748568 A SE 748568A SE 320729 B SE320729 B SE 320729B
Authority
SE
Sweden
Prior art keywords
thyristor
emitter layer
layers
connection
load current
Prior art date
Application number
SE7485/68A
Other languages
English (en)
Inventor
P Svedberg
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Priority to SE7485/68A priority Critical patent/SE320729B/xx
Priority to CH832069A priority patent/CH489962A/de
Priority to DE19691927834 priority patent/DE1927834B2/de
Priority to FR6918378A priority patent/FR2010185A1/fr
Priority to GB28259/69A priority patent/GB1263509A/en
Priority to NL6908570A priority patent/NL6908570A/xx
Priority to US830807A priority patent/US3641404A/en
Publication of SE320729B publication Critical patent/SE320729B/xx

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
SE7485/68A 1968-06-05 1968-06-05 SE320729B (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE7485/68A SE320729B (de) 1968-06-05 1968-06-05
CH832069A CH489962A (de) 1968-06-05 1969-05-30 Thyristorschaltung
DE19691927834 DE1927834B2 (de) 1968-06-05 1969-05-31 Thyristorschaltung
FR6918378A FR2010185A1 (de) 1968-06-05 1969-06-04
GB28259/69A GB1263509A (en) 1968-06-05 1969-06-04 Improved thyristor circuit
NL6908570A NL6908570A (de) 1968-06-05 1969-06-05
US830807A US3641404A (en) 1968-06-05 1969-06-05 Thyristor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE7485/68A SE320729B (de) 1968-06-05 1968-06-05

Publications (1)

Publication Number Publication Date
SE320729B true SE320729B (de) 1970-02-16

Family

ID=20271487

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7485/68A SE320729B (de) 1968-06-05 1968-06-05

Country Status (7)

Country Link
US (1) US3641404A (de)
CH (1) CH489962A (de)
DE (1) DE1927834B2 (de)
FR (1) FR2010185A1 (de)
GB (1) GB1263509A (de)
NL (1) NL6908570A (de)
SE (1) SE320729B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4032956A (en) * 1972-12-29 1977-06-28 Sony Corporation Transistor circuit
JPS5646267B2 (de) * 1974-05-10 1981-10-31
JPS5648983B2 (de) * 1974-05-10 1981-11-19
GB1499203A (en) * 1975-02-04 1978-01-25 Standard Telephones Cables Ltd Thyristor structure to facilitate zero point switching
US4207584A (en) * 1975-09-25 1980-06-10 Bbc Brown Boveri & Company Limited Safety device for protecting semiconductor components against excessive voltage rise rates
JPS5942991B2 (ja) * 1977-05-23 1984-10-18 株式会社日立製作所 サイリスタ
DE2739183C3 (de) * 1977-08-31 1981-10-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Optisch zündbarer Halbleitergleichrichter
EP0017860A3 (de) * 1979-04-11 1982-07-21 Teccor Electronics, Inc. Halbleiterschaltungsanordnung und Verfahren zu deren Herstellung
DE3112941A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit innerer stromverstaerkung und verfahren zu seinem betrieb
DE3112942A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor und verfahren zu seinem betrieb
FR2542148B1 (fr) * 1983-03-01 1986-12-05 Telemecanique Electrique Circuit de commande d'un dispositif a semi-conducteur sensible du type thyristor ou triac, avec impedance d'assistance a l'auto-allumage et son application a la realisation d'un montage commutateur associant un thyristor sensible a un thyristor moins sensible
US8536617B2 (en) * 2011-12-16 2013-09-17 General Electric Company Optically triggered semiconductor device and method for making the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980832A (en) * 1959-06-10 1961-04-18 Westinghouse Electric Corp High current npnp switch
US3210621A (en) * 1960-06-20 1965-10-05 Westinghouse Electric Corp Plural emitter semiconductor device
US3251004A (en) * 1961-04-27 1966-05-10 Merck & Co Inc Relaxation oscillator semiconductor solid circuit structure
BE624429A (de) * 1961-08-21
US3391310A (en) * 1964-01-13 1968-07-02 Gen Electric Semiconductor switch
US3356862A (en) * 1964-12-02 1967-12-05 Int Rectifier Corp High speed controlled rectifier
DE1489707A1 (de) * 1965-10-16 1969-02-06 Bbc Brown Boveri & Cie Halbleiterelement zum Schalten und Verfahren zu seiner Herstellung
US3401320A (en) * 1966-05-12 1968-09-10 Int Rectifier Corp Positive pulse turn-off controlled rectifier
US3489962A (en) * 1966-12-19 1970-01-13 Gen Electric Semiconductor switching device with emitter gate

Also Published As

Publication number Publication date
US3641404A (en) 1972-02-08
GB1263509A (en) 1972-02-09
NL6908570A (de) 1969-12-09
CH489962A (de) 1970-04-30
DE1927834A1 (de) 1970-05-06
FR2010185A1 (de) 1970-02-13
DE1927834B2 (de) 1972-02-17

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