SE303804B - - Google Patents

Info

Publication number
SE303804B
SE303804B SE4855/61A SE485561A SE303804B SE 303804 B SE303804 B SE 303804B SE 4855/61 A SE4855/61 A SE 4855/61A SE 485561 A SE485561 A SE 485561A SE 303804 B SE303804 B SE 303804B
Authority
SE
Sweden
Application number
SE4855/61A
Inventor
J Allegretti
J Lago
Original Assignee
Merck & Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck & Co Inc filed Critical Merck & Co Inc
Publication of SE303804B publication Critical patent/SE303804B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3411—
    • H10P14/3414—
    • H10P14/3466—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber
SE4855/61A 1960-05-09 1961-05-08 SE303804B (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2793860A 1960-05-09 1960-05-09
US53578A US3168422A (en) 1960-05-09 1960-08-24 Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited

Publications (1)

Publication Number Publication Date
SE303804B true SE303804B (enExample) 1968-09-09

Family

ID=26703059

Family Applications (1)

Application Number Title Priority Date Filing Date
SE4855/61A SE303804B (enExample) 1960-05-09 1961-05-08

Country Status (5)

Country Link
US (1) US3168422A (enExample)
BE (1) BE603573A (enExample)
CH (1) CH404336A (enExample)
DK (1) DK104359C (enExample)
SE (1) SE303804B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE620887A (enExample) * 1959-06-18
DE1419717A1 (de) * 1960-12-06 1968-10-17 Siemens Ag Monokristalliner Halbleiterkoerper und Verfahren zur Herstellung desselben
NL288472A (enExample) * 1962-02-02
GB1060474A (en) * 1963-03-27 1967-03-01 Siemens Ag The production of monocrystalline semiconductor bodies of silicon or germanium
US3258359A (en) * 1963-04-08 1966-06-28 Siliconix Inc Semiconductor etch and oxidation process
DE1238105B (de) * 1963-07-17 1967-04-06 Siemens Ag Verfahren zum Herstellen von pn-UEbergaengen in Silizium
US3316121A (en) * 1963-10-02 1967-04-25 Northern Electric Co Epitaxial deposition process
DE1251722B (de) * 1964-02-01 1967-10-12 Siemens Aktiengesellschaft Berlin und München Erlangen Verfahren zum Herstellen von mit Phos phor dotiertem Halbleitermaterial
US3523046A (en) * 1964-09-14 1970-08-04 Ibm Method of epitaxially depositing single-crystal layer and structure resulting therefrom
US3502515A (en) * 1964-09-28 1970-03-24 Philco Ford Corp Method of fabricating semiconductor device which includes region in which minority carriers have short lifetime
DE1544257A1 (de) * 1965-01-13 1970-03-26 Siemens Ag Verfahren zum Herstellen von Halbleiteranordnungen
DE1519865A1 (de) * 1965-02-05 1970-02-26 Siemens Ag Verfahren zum Herstellen von duennen Schichten aus hochreinen Materialien
US3360406A (en) * 1965-12-03 1967-12-26 Bell Telephone Labor Inc Temperature gradient zone melting and growing of semiconductor material
US3447902A (en) * 1966-04-04 1969-06-03 Motorola Inc Single crystal silicon rods
US3454434A (en) * 1966-05-09 1969-07-08 Motorola Inc Multilayer semiconductor device
US3773499A (en) * 1968-04-03 1973-11-20 M Melnikov Method of zonal melting of materials
US3617399A (en) * 1968-10-31 1971-11-02 Texas Instruments Inc Method of fabricating semiconductor power devices within high resistivity isolation rings
FR2138539B1 (enExample) * 1971-05-27 1973-05-25 Alsthom
US4176166A (en) * 1977-05-25 1979-11-27 John S. Pennish Process for producing liquid silicon
FR2572312B1 (fr) * 1984-10-30 1989-01-20 Rhone Poulenc Spec Chim Procede de fabrication de barreaux de silicium ultra-pur
US4659401A (en) * 1985-06-10 1987-04-21 Massachusetts Institute Of Technology Growth of epitaxial films by plasma enchanced chemical vapor deposition (PE-CVD)
JP5477145B2 (ja) * 2009-04-28 2014-04-23 三菱マテリアル株式会社 多結晶シリコン反応炉

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE883784C (de) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen
US2809135A (en) * 1952-07-22 1957-10-08 Sylvania Electric Prod Method of forming p-n junctions in semiconductor material and apparatus therefor
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
DE1029941B (de) * 1955-07-13 1958-05-14 Siemens Ag Verfahren zur Herstellung von einkristallinen Halbleiterschichten

Also Published As

Publication number Publication date
CH404336A (fr) 1965-12-15
US3168422A (en) 1965-02-02
DK104359C (da) 1966-05-09
BE603573A (fr) 1961-11-09

Similar Documents

Publication Publication Date Title
BE601704A (enExample)
BE602407A (enExample)
BE589181A (enExample)
SE303804B (enExample)
BE587142A (enExample)
BE588858A (enExample)
BE589103A (enExample)
BE592985A (enExample)
BE593786A (enExample)
BE594889A (enExample)
BE595719A (enExample)
BE597092A (enExample)
BE597853A (enExample)
BE598847A (enExample)
BE598916A (enExample)
BE599075A (enExample)
BE599186A (enExample)
BE599340A (enExample)
BE599358A (enExample)
BE599397A (enExample)
BE599409A (enExample)
BE599435A (enExample)
BE599781A (enExample)
BE599785A (enExample)
BE600368A (enExample)