SE0801497L - Halvledarkomponent innefattande ett aktivt skikt omgivet på båda sidor av ett kontaktskikt och med ett elektrodskikt - Google Patents

Halvledarkomponent innefattande ett aktivt skikt omgivet på båda sidor av ett kontaktskikt och med ett elektrodskikt

Info

Publication number
SE0801497L
SE0801497L SE0801497A SE0801497A SE0801497L SE 0801497 L SE0801497 L SE 0801497L SE 0801497 A SE0801497 A SE 0801497A SE 0801497 A SE0801497 A SE 0801497A SE 0801497 L SE0801497 L SE 0801497L
Authority
SE
Sweden
Prior art keywords
layer
semiconductor component
sides
contact
active
Prior art date
Application number
SE0801497A
Other languages
English (en)
Other versions
SE535723C2 (sv
Inventor
Per Ericsson
Christian Vieider
Original Assignee
Acreo Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40992063&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SE0801497(L) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Acreo Ab filed Critical Acreo Ab
Priority to SE0801497A priority Critical patent/SE535723C2/sv
Priority to EP09162800.8A priority patent/EP2138818B1/en
Publication of SE0801497L publication Critical patent/SE0801497L/sv
Publication of SE535723C2 publication Critical patent/SE535723C2/sv

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H01L27/16—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
SE0801497A 2008-06-25 2008-06-25 Halvledarkomponent innefattande ett aktivt skikt omgivet på båda sidor av ett kontaktskikt och med ett elektrodskikt SE535723C2 (sv)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SE0801497A SE535723C2 (sv) 2008-06-25 2008-06-25 Halvledarkomponent innefattande ett aktivt skikt omgivet på båda sidor av ett kontaktskikt och med ett elektrodskikt
EP09162800.8A EP2138818B1 (en) 2008-06-25 2009-06-16 Bolometer comprising an active layer surrounded on both sides by a contact layer and with an electrode layer.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0801497A SE535723C2 (sv) 2008-06-25 2008-06-25 Halvledarkomponent innefattande ett aktivt skikt omgivet på båda sidor av ett kontaktskikt och med ett elektrodskikt

Publications (2)

Publication Number Publication Date
SE0801497L true SE0801497L (sv) 2009-12-26
SE535723C2 SE535723C2 (sv) 2012-11-27

Family

ID=40992063

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0801497A SE535723C2 (sv) 2008-06-25 2008-06-25 Halvledarkomponent innefattande ett aktivt skikt omgivet på båda sidor av ett kontaktskikt och med ett elektrodskikt

Country Status (2)

Country Link
EP (1) EP2138818B1 (sv)
SE (1) SE535723C2 (sv)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD340Z (ro) * 2010-04-23 2011-09-30 Институт Электронной Инженерии И Промышленных Технологий Bolometru
US11819208B2 (en) 2021-08-05 2023-11-21 Covidien Lp Handheld electromechanical surgical device with strain gauge drift detection

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3357247B2 (ja) 1996-08-23 2002-12-16 アルプス電気株式会社 感温素子および輻射線センサ

Also Published As

Publication number Publication date
SE535723C2 (sv) 2012-11-27
EP2138818B1 (en) 2013-11-27
EP2138818A1 (en) 2009-12-30

Similar Documents

Publication Publication Date Title
JP2010278436A5 (sv)
ATE520152T1 (de) Leistungshalbleiterbauelement
EA201390096A1 (ru) Стекло с электрическим присоединительным элементом
JP2012068627A5 (ja) 半導体装置の作製方法
JP2013229598A5 (sv)
TW200742106A (en) Photoelectric conversion device, manufacturing method thereof and semiconductor device
JP2014053606A5 (sv)
JP2008544540A5 (sv)
JP2010157636A5 (sv)
TW200741968A (en) Butted contact structure and method for forming the same
TW200742095A (en) Area-efficient gated diode structure and method of forming same
TW200802888A (en) Thin film transistor and manufacturing method thereof
WO2010091680A3 (de) Solarzellenstring und solarmodul mit derartigen solarzellenstrings
JP2012064849A5 (sv)
EP2343744A3 (en) Light emitting diode with patterned electrodes
JP2011054949A5 (ja) 半導体装置
WO2008086348A3 (en) Semiconductor device and method of manufacturing the same
ATE535013T1 (de) Verbindungsstruktur und herstellungsverfahren dafür
EP2378572A3 (en) Electrode configuration for a light emitting device
ATE532126T1 (de) Berührungsoberfläche mit isolierschicht
ATE535949T1 (de) Speichervorrichtung und cbram-speicher mit erhöhter zuverlässigkeit
JP2013102140A5 (ja) 半導体装置
WO2011157814A3 (en) Power semiconductor device
WO2009158175A3 (en) Led with reduced electrode area
JP2013098561A5 (sv)

Legal Events

Date Code Title Description
NUG Patent has lapsed