SE0202012D0 - Polarisationskontrollerade VCSELer som använder sig av en strömbegränsande apertur - Google Patents
Polarisationskontrollerade VCSELer som använder sig av en strömbegränsande aperturInfo
- Publication number
- SE0202012D0 SE0202012D0 SE0202012A SE0202012A SE0202012D0 SE 0202012 D0 SE0202012 D0 SE 0202012D0 SE 0202012 A SE0202012 A SE 0202012A SE 0202012 A SE0202012 A SE 0202012A SE 0202012 D0 SE0202012 D0 SE 0202012D0
- Authority
- SE
- Sweden
- Prior art keywords
- polarization
- current limiting
- limiting aperture
- vcsels
- polarization controlled
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/1833—Position of the structure with more than one structure
- H01S5/18333—Position of the structure with more than one structure only above the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18338—Non-circular shape of the structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0116192A GB2377318A (en) | 2001-07-03 | 2001-07-03 | Vertical Cavity Surface Emitting Laser |
Publications (2)
Publication Number | Publication Date |
---|---|
SE0202012D0 true SE0202012D0 (sv) | 2002-06-28 |
SE0202012L SE0202012L (sv) | 2003-01-04 |
Family
ID=9917815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE0202012A SE0202012L (sv) | 2001-07-03 | 2002-06-28 | Polarisationskontrollerade VCSELer som använder sig av en strömbegränsande apertur |
Country Status (6)
Country | Link |
---|---|
US (1) | US20030007531A1 (sv) |
CN (1) | CN1395344A (sv) |
DE (1) | DE10229211A1 (sv) |
FR (1) | FR2827087A1 (sv) |
GB (1) | GB2377318A (sv) |
SE (1) | SE0202012L (sv) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100499128B1 (ko) * | 2002-07-19 | 2005-07-04 | 삼성전기주식회사 | 전류제한층이 형성된 반도체 레이저 다이오드 및 그제조방법 |
DE10234976B4 (de) * | 2002-07-31 | 2012-05-03 | Osram Opto Semiconductors Gmbh | Oberflächenemittierender Halbleiterlaserchip und Verfahren zu dessen Herstellung |
CA2581614A1 (en) * | 2004-10-01 | 2006-04-13 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
US7408967B2 (en) * | 2005-12-19 | 2008-08-05 | Emcore Corporation | Method of fabricating single mode VCSEL for optical mouse |
CN100377456C (zh) * | 2006-05-17 | 2008-03-26 | 中微光电子(潍坊)有限公司 | 垂直腔面发射半导体激光二极管的外延结构 |
JP2008283028A (ja) * | 2007-05-11 | 2008-11-20 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザの製造方法、モジュール、光源装置、情報処理装置、光送信装置、光空間伝送装置および光空間伝送システム。 |
DE102008055941A1 (de) * | 2008-11-05 | 2010-06-17 | Osram Opto Semiconductors Gmbh | Oberflächenemittierendes Halbleiterlaserbauelement mit einer vertikalen Emissionsrichtung |
JP2011159943A (ja) * | 2010-01-08 | 2011-08-18 | Ricoh Co Ltd | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
TWI405379B (zh) * | 2010-09-14 | 2013-08-11 | True Light Corp | 垂直共振腔面射型雷射及其製作方法 |
CN101975554B (zh) * | 2010-09-29 | 2012-02-22 | 北京工业大学 | 一种非破坏性面发射半导体激光器电流限制孔径测定方法 |
CN102738703B (zh) * | 2011-04-01 | 2014-04-16 | 光环科技股份有限公司 | 垂直共振腔面射型激光及其制作方法 |
CN102611000B (zh) * | 2012-03-23 | 2013-09-25 | 中国科学院长春光学精密机械与物理研究所 | 高效率非对称光场分布垂直腔面发射半导体激光器 |
CN102801107B (zh) * | 2012-08-08 | 2014-07-09 | 中国科学院长春光学精密机械与物理研究所 | 一种垂直腔面发射激光器及其制作方法 |
EP2713193A1 (en) | 2012-09-28 | 2014-04-02 | CCS Technology, Inc. | A method of manufacturing an assembly to couple an optical fiber to an opto-electronic component |
WO2016008083A1 (zh) * | 2014-07-15 | 2016-01-21 | 华为技术有限公司 | 一种垂直腔面发射激光器vcsel |
CN106041955B (zh) * | 2016-07-07 | 2018-05-04 | 大连理工大学 | 一种机器人自动制孔装置及加工方法 |
US11289881B2 (en) | 2019-05-08 | 2022-03-29 | Ii-Vi Delaware, Inc. | Oxide aperture shaping in vertical cavity surface-emitting laser |
JPWO2021124967A1 (sv) * | 2019-12-20 | 2021-06-24 | ||
CN111129952B (zh) * | 2019-12-25 | 2020-12-22 | 长春理工大学 | 非对称环形结构上分布布拉格反射镜垂直腔面发射半导体激光器 |
CN110957635B (zh) * | 2020-02-25 | 2020-09-01 | 常州纵慧芯光半导体科技有限公司 | 一种实现偏振控制的vcsel器件及其制备方法 |
CN111509560A (zh) * | 2020-04-22 | 2020-08-07 | 欧菲微电子技术有限公司 | 垂直腔面发射激光器、制备方法及摄像头模组 |
CN111817129A (zh) * | 2020-08-31 | 2020-10-23 | 江西铭德半导体科技有限公司 | 一种vcsel芯片及其制造方法 |
JP7515109B2 (ja) * | 2020-10-06 | 2024-07-12 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
CN112332101B (zh) * | 2020-10-30 | 2022-05-17 | 东南大学成贤学院 | 实现电磁诱导透明现象的全介质非对称十字空腔超材料 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5729563A (en) * | 1994-07-07 | 1998-03-17 | Hewlett-Packard Company | Method and apparatus for optically and thermally isolating surface emitting laser diodes |
US5978408A (en) * | 1997-02-07 | 1999-11-02 | Xerox Corporation | Highly compact vertical cavity surface emitting lasers |
US5995531A (en) * | 1997-11-04 | 1999-11-30 | Motorola, Inc. | VCSEL having polarization control and method of making same |
GB2352871A (en) * | 1999-07-24 | 2001-02-07 | Mitel Semiconductor Ab | Controllable selective oxidation on VCSELs |
US6411638B1 (en) * | 1999-08-31 | 2002-06-25 | Honeywell Inc. | Coupled cavity anti-guided vertical-cavity surface-emitting laser |
-
2001
- 2001-07-03 GB GB0116192A patent/GB2377318A/en not_active Withdrawn
-
2002
- 2002-06-25 US US10/180,790 patent/US20030007531A1/en not_active Abandoned
- 2002-06-28 SE SE0202012A patent/SE0202012L/sv not_active Application Discontinuation
- 2002-06-28 DE DE10229211A patent/DE10229211A1/de not_active Withdrawn
- 2002-07-03 CN CN02141211A patent/CN1395344A/zh active Pending
- 2002-07-03 FR FR0208295A patent/FR2827087A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2827087A1 (fr) | 2003-01-10 |
SE0202012L (sv) | 2003-01-04 |
GB2377318A (en) | 2003-01-08 |
US20030007531A1 (en) | 2003-01-09 |
GB0116192D0 (en) | 2001-08-22 |
DE10229211A1 (de) | 2003-01-23 |
CN1395344A (zh) | 2003-02-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAV | Patent application has lapsed |