SE0104131D0 - Improved method and apparatus for image formation - Google Patents

Improved method and apparatus for image formation

Info

Publication number
SE0104131D0
SE0104131D0 SE0104131A SE0104131A SE0104131D0 SE 0104131 D0 SE0104131 D0 SE 0104131D0 SE 0104131 A SE0104131 A SE 0104131A SE 0104131 A SE0104131 A SE 0104131A SE 0104131 D0 SE0104131 D0 SE 0104131D0
Authority
SE
Sweden
Prior art keywords
pattern
adjusted
workpiece
image formation
improved method
Prior art date
Application number
SE0104131A
Other languages
English (en)
Inventor
Maans Bjuggren
Lars Ivansen
Lars Stiblert
Original Assignee
Micronic Laser Systems Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micronic Laser Systems Ab filed Critical Micronic Laser Systems Ab
Priority to SE0104131A priority Critical patent/SE0104131D0/sv
Publication of SE0104131D0 publication Critical patent/SE0104131D0/sv
Priority to EP02786338A priority patent/EP1451641A1/en
Priority to US10/498,590 priority patent/US7365829B2/en
Priority to CNB028245199A priority patent/CN1278187C/zh
Priority to PCT/SE2002/002267 priority patent/WO2003054632A1/en
Priority to JP2003555282A priority patent/JP4563682B2/ja
Priority to AU2002349857A priority patent/AU2002349857A1/en
Priority to KR10-2004-7007850A priority patent/KR20040064712A/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SE0104131A 2001-12-10 2001-12-10 Improved method and apparatus for image formation SE0104131D0 (sv)

Priority Applications (8)

Application Number Priority Date Filing Date Title
SE0104131A SE0104131D0 (sv) 2001-12-10 2001-12-10 Improved method and apparatus for image formation
EP02786338A EP1451641A1 (en) 2001-12-10 2002-12-10 Method and apparatus for image formation
US10/498,590 US7365829B2 (en) 2001-12-10 2002-12-10 Method and apparatus for image formation
CNB028245199A CN1278187C (zh) 2001-12-10 2002-12-10 图像形成方法和装置
PCT/SE2002/002267 WO2003054632A1 (en) 2001-12-10 2002-12-10 Method and apparatus for image formation
JP2003555282A JP4563682B2 (ja) 2001-12-10 2002-12-10 画像形成方法および装置
AU2002349857A AU2002349857A1 (en) 2001-12-10 2002-12-10 Method and apparatus for image formation
KR10-2004-7007850A KR20040064712A (ko) 2001-12-10 2002-12-10 이미지 형성을 위한 방법 및 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0104131A SE0104131D0 (sv) 2001-12-10 2001-12-10 Improved method and apparatus for image formation

Publications (1)

Publication Number Publication Date
SE0104131D0 true SE0104131D0 (sv) 2001-12-10

Family

ID=20286249

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0104131A SE0104131D0 (sv) 2001-12-10 2001-12-10 Improved method and apparatus for image formation

Country Status (8)

Country Link
US (1) US7365829B2 (sv)
EP (1) EP1451641A1 (sv)
JP (1) JP4563682B2 (sv)
KR (1) KR20040064712A (sv)
CN (1) CN1278187C (sv)
AU (1) AU2002349857A1 (sv)
SE (1) SE0104131D0 (sv)
WO (1) WO2003054632A1 (sv)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7266803B2 (en) * 2005-07-29 2007-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. Layout generation and optimization to improve photolithographic performance
US8122846B2 (en) * 2005-10-26 2012-02-28 Micronic Mydata AB Platforms, apparatuses, systems and methods for processing and analyzing substrates
KR101407754B1 (ko) * 2005-10-26 2014-06-16 마이크로닉 마이데이터 아베 라이팅 장치 및 방법
JP6107059B2 (ja) * 2012-11-02 2017-04-05 富士通セミコンダクター株式会社 レイアウトパターンの補正方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63211621A (ja) * 1987-02-26 1988-09-02 Fujitsu Ltd レ−ザ描画方法
JP2512184B2 (ja) * 1990-01-31 1996-07-03 株式会社日立製作所 荷電粒子線描画装置及び描画方法
JPH04416A (ja) * 1990-04-10 1992-01-06 Nippon Seiko Kk 可変ビーム成形装置及びこれを用いた露光装置
GB2293459B (en) * 1994-09-22 1997-10-01 Holtronic Technologies Ltd Method for printing of a pattern of features
US6312134B1 (en) * 1996-07-25 2001-11-06 Anvik Corporation Seamless, maskless lithography system using spatial light modulator
JP4131880B2 (ja) * 1997-07-31 2008-08-13 株式会社東芝 マスクデータ作成方法及びマスクデータ作成装置
SE517345C2 (sv) * 1999-01-18 2002-05-28 Micronic Laser Systems Ab Metod och system för tillverkande av stora skärmpaneler med förbättrad precision
JP3812266B2 (ja) * 1999-02-18 2006-08-23 株式会社日立製作所 荷電粒子線描画装置及びパターン形成方法
JP3518400B2 (ja) * 1999-03-18 2004-04-12 株式会社日立製作所 電子線描画装置および電子線を用いた描画方法
JP3508617B2 (ja) * 1999-05-11 2004-03-22 株式会社日立製作所 電子線描画装置および電子線を用いた描画方法
AU5261200A (en) * 1999-05-20 2000-12-12 Micronic Laser Systems Ab A method for error reduction in lithography
US7444616B2 (en) * 1999-05-20 2008-10-28 Micronic Laser Systems Ab Method for error reduction in lithography
JP2000340481A (ja) * 1999-05-26 2000-12-08 Jeol Ltd 電子ビーム描画装置における近接効果補正方法
JP2001135562A (ja) * 1999-11-05 2001-05-18 Hitachi Ltd リソグラフィ装置
US6421180B1 (en) * 2000-03-23 2002-07-16 Harris Corporation Apparatus for generating a laser pattern on a photomask and associated methods
US6618185B2 (en) * 2001-11-28 2003-09-09 Micronic Laser Systems Ab Defective pixel compensation method

Also Published As

Publication number Publication date
AU2002349857A1 (en) 2003-07-09
WO2003054632A1 (en) 2003-07-03
JP4563682B2 (ja) 2010-10-13
US20050082496A1 (en) 2005-04-21
CN1278187C (zh) 2006-10-04
CN1602450A (zh) 2005-03-30
EP1451641A1 (en) 2004-09-01
KR20040064712A (ko) 2004-07-19
US7365829B2 (en) 2008-04-29
JP2005513548A (ja) 2005-05-12

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