RU2749493C1 - Method for manufacturing a thin-film transistor - Google Patents
Method for manufacturing a thin-film transistor Download PDFInfo
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- RU2749493C1 RU2749493C1 RU2020132664A RU2020132664A RU2749493C1 RU 2749493 C1 RU2749493 C1 RU 2749493C1 RU 2020132664 A RU2020132664 A RU 2020132664A RU 2020132664 A RU2020132664 A RU 2020132664A RU 2749493 C1 RU2749493 C1 RU 2749493C1
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- RU
- Russia
- Prior art keywords
- thin
- film
- film transistor
- manufacturing
- amorphous silicon
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000010409 thin film Substances 0.000 title claims abstract description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims abstract description 8
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 7
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 4
- 239000001307 helium Substances 0.000 claims abstract description 4
- 229910052734 helium Inorganic materials 0.000 claims abstract description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910007264 Si2H6 Inorganic materials 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Изобретение относится к области технологии производства полупроводниковых приборов, в частности к технологии изготовления тонкопленочного транзистора с пониженным значением токов утечек.The invention relates to the field of technology for the production of semiconductor devices, in particular to the technology of manufacturing a thin-film transistor with a reduced value of leakage currents.
Известен способ изготовления тонкопленочного транзистора [Заявка 1276765 Япония, МКИ H01L 29/78] с повышенной подвижностью электронов, созданием в канале на стеклянной подложке квантово-размерной гетероструктуры Si/Ge/Si, которая покрывается изолирующим слоем. Боковые части структуры легируются фосфором для снижения последовательного сопротивления. Затвор из поликремния п-Si слоя изолируется слоем SiO2. В таких приборах из-за низкой технологичности процесса создания квантово-размерной гетероструктуры Si/Ge/Si, повышается дефектность структуры и ухудшаются электрические параметры приборов.A known method of manufacturing a thin-film transistor [Application 1276765 Japan, MKI H01L 29/78] with increased electron mobility, creating a quantum-dimensional Si / Ge / Si heterostructure in the channel on a glass substrate, which is covered with an insulating layer. The sides of the structure are doped with phosphorus to reduce series resistance. The polysilicon gate of the p-Si layer is insulated with a SiO 2 layer. In such devices, due to the low manufacturability of the process of creating a quantum-well Si / Ge / Si heterostructure, the defectiveness of the structure increases and the electrical parameters of the devices deteriorate.
Известен способ изготовления тонкопленочного транзистора [Патент 5382537 США, МКИ H01L 21/265] с повышенной подвижностью носителей в канале транзистора путем облучения слоя аморфного кремния a-Si эксимерным лазером с образованием затравочных кристаллов. Затем при температуре 600°С в течении 40 часов в атмосфере азота слой аморфного кремния a-Si, подвергается кристаллизации с формированием крупнозернистого активного слоя.A known method of manufacturing a thin-film transistor [US Patent 5382537, MKI H01L 21/265] with increased carrier mobility in the transistor channel by irradiating a layer of amorphous silicon a-Si with an excimer laser with the formation of seed crystals. Then, at a temperature of 600 ° C for 40 hours in a nitrogen atmosphere, a layer of amorphous silicon a-Si undergoes crystallization with the formation of a coarse-grained active layer.
Недостатками этого способа являются: повышенные значения токов утечек; высокая дефектность; низкая технологичность.The disadvantages of this method are: increased values of leakage currents; high defectiveness; low manufacturability.
Задача, решаемая изобретением: снижение токов утечек, обеспечение технологичности, улучшение параметров приборов, повышение качества и увеличение процента выхода годных.The problem solved by the invention: reducing leakage currents, ensuring manufacturability, improving the parameters of devices, improving quality and increasing the percentage of yield.
Задача решается формированием пленки аморфного кремния a-Si:H путем осаждения в ВЧ разряде с разложением дисилана в тлеющем разряде растворенного в гелии при соотношении He/Si2H6=9/l, на стеклянную подложку при давление газа 130 Па, ВЧ мощности 8 Вт, на частоте 13,56 МГц и температуре подложки 280°С, со скоростью потока газа 200 см3/мин и скоростью осаждения пленки 1,2 нм/с.The problem is solved by forming a film of amorphous silicon a-Si: H by deposition in an HF discharge with decomposition of disilane dissolved in helium in a glow discharge at a ratio He / Si2H6 = 9 / l, on a glass substrate at a gas pressure of 130 Pa, HF power of 8 W, on frequency of 13.56 MHz and a substrate temperature of 280 ° C, with a gas flow rate of 200 cm3 / min and a film deposition rate of 1.2 nm / s.
Технология способа состоит в следующем: наносят на подложку слой аморфного кремния a-Si:H путем осаждения в ВЧ разряде с разложением дисилана в тлеющем разряде растворенного в гелии при соотношении He/Si2H6=9/l, на стеклянную подложку при давлении газа 130 Па, ВЧ мощности 8 Вт, на частоте 13,56 МГц и температуре подложки 280°С, со скоростью потока газа 200 см3/мин и скоростью осаждения пленки 1,2 нм/с. Области тонкопленочного транзистора и контакты к этим областям формируют по стандартной технологии.The technology of the method is as follows: a layer of amorphous silicon a-Si: H is deposited on the substrate by deposition in an RF discharge with the decomposition of disilane dissolved in helium in a glow discharge at a ratio He / Si2H6 = 9 / l, on a glass substrate at a gas pressure of 130 Pa, RF power of 8 W, at a frequency of 13.56 MHz and a substrate temperature of 280 ° C, with a gas flow rate of 200 cm3 / min and a film deposition rate of 1.2 nm / s. Regions of the TFT and contacts to these regions are formed using standard technology.
По предлагаемому способу были изготовлены и исследованы полупроводниковые приборы. Результаты обработки представлены в таблице.According to the proposed method, semiconductor devices were manufactured and investigated. The processing results are presented in the table.
Экспериментальные исследования показали, что выход годных структур на партии пластин, сформированных в оптимальном режиме, увеличился на 17,2%.Experimental studies have shown that the yield of suitable structures for batches of plates formed in the optimal mode increased by 17.2%.
Технический результат: снижение токов утечек, обеспечение технологичности, улучшение параметров приборов, повышение качества и увеличения процента выхода годных.EFFECT: lowering leakage currents, ensuring manufacturability, improving the parameters of devices, improving the quality and increasing the percentage of yield.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2020132664A RU2749493C1 (en) | 2020-10-01 | 2020-10-01 | Method for manufacturing a thin-film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2020132664A RU2749493C1 (en) | 2020-10-01 | 2020-10-01 | Method for manufacturing a thin-film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| RU2749493C1 true RU2749493C1 (en) | 2021-06-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2020132664A RU2749493C1 (en) | 2020-10-01 | 2020-10-01 | Method for manufacturing a thin-film transistor |
Country Status (1)
| Country | Link |
|---|---|
| RU (1) | RU2749493C1 (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61224364A (en) * | 1985-03-28 | 1986-10-06 | Fuji Xerox Co Ltd | Manufacture of thin film transistor and manufacturing equipment |
| JPH03194937A (en) * | 1989-12-22 | 1991-08-26 | Sony Corp | Manufacture of thin film transistor |
| US5382537A (en) * | 1992-07-10 | 1995-01-17 | Sony Corporation | Method of making thin film transistors |
| RU2035800C1 (en) * | 1992-04-13 | 1995-05-20 | Малое научно-производственное предприятие "ЭЛО" | Process of manufacture of thin-film transistors |
| RU2069417C1 (en) * | 1994-06-08 | 1996-11-20 | Акционерное общество открытого типа "Научно-исследовательский институт молекулярной электроники и завод "Микрон" | Method for producing thin-film transistor arrays of liquid-crystal screens |
| JPH11121762A (en) * | 1997-06-30 | 1999-04-30 | Hyundai Electron Ind Co Ltd | Thin-film transistor for liquid crystal display element and manufacture thereof |
| JP3194937B2 (en) * | 1989-08-09 | 2001-08-06 | 株式会社日立製作所 | Variable capacity swash plate type compressor |
-
2020
- 2020-10-01 RU RU2020132664A patent/RU2749493C1/en active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61224364A (en) * | 1985-03-28 | 1986-10-06 | Fuji Xerox Co Ltd | Manufacture of thin film transistor and manufacturing equipment |
| JP3194937B2 (en) * | 1989-08-09 | 2001-08-06 | 株式会社日立製作所 | Variable capacity swash plate type compressor |
| JPH03194937A (en) * | 1989-12-22 | 1991-08-26 | Sony Corp | Manufacture of thin film transistor |
| RU2035800C1 (en) * | 1992-04-13 | 1995-05-20 | Малое научно-производственное предприятие "ЭЛО" | Process of manufacture of thin-film transistors |
| US5382537A (en) * | 1992-07-10 | 1995-01-17 | Sony Corporation | Method of making thin film transistors |
| RU2069417C1 (en) * | 1994-06-08 | 1996-11-20 | Акционерное общество открытого типа "Научно-исследовательский институт молекулярной электроники и завод "Микрон" | Method for producing thin-film transistor arrays of liquid-crystal screens |
| JPH11121762A (en) * | 1997-06-30 | 1999-04-30 | Hyundai Electron Ind Co Ltd | Thin-film transistor for liquid crystal display element and manufacture thereof |
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