JPS61224364A - Manufacture of thin film transistor and manufacturing equipment - Google Patents

Manufacture of thin film transistor and manufacturing equipment

Info

Publication number
JPS61224364A
JPS61224364A JP6483385A JP6483385A JPS61224364A JP S61224364 A JPS61224364 A JP S61224364A JP 6483385 A JP6483385 A JP 6483385A JP 6483385 A JP6483385 A JP 6483385A JP S61224364 A JPS61224364 A JP S61224364A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
electrode
sih4
light
flow
irradiating light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6483385A
Inventor
Mario Fuse
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To obtain a TFT device wherein a gate electrode, a source electrode and a drain electrode are in good alignment by forming the electrode pattern of an upper layer side by selective CVD by irradiating light from the back surface, using the electrode of a lower layer side as a shading light layer. CONSTITUTION:A glass substrate 20 provided with a Cr gate electrode 21 is mounted in a light CVD equipment, the substrate is lit with the flow of SiH4 and NH4, an Si3N4 gate insulation film 22 is irradiated with excitation light hupsilon0 and an a-Si:H 23 is piled with the flow of only SiH4 irradiating light hupsilon1. An ohmic contact layer 24 of n<+>-type a-Si:H is made on the front surface side, suing the electrode 21 as a mask with the flow of SiH4 and PH3 irradiating light hupsilon2 and then, Al electrodes 25, 26 are selectively installed by irradiating light hupsilon3 from the back surface using Al(CH4)3. Then, an Si3N4 protection film 27 is made with the flow of SiH4 and NH3 irradiating light hupsilon4 from the front surface. A Cr thin film electrode 28 is made by taking from the equipment. This construction enables to obtain a TFT wherein the matching of the electrodes is good, no pollutant is mixed and the characteristics are excellent.
JP6483385A 1985-03-28 1985-03-28 Manufacture of thin film transistor and manufacturing equipment Pending JPS61224364A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6483385A JPS61224364A (en) 1985-03-28 1985-03-28 Manufacture of thin film transistor and manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6483385A JPS61224364A (en) 1985-03-28 1985-03-28 Manufacture of thin film transistor and manufacturing equipment

Publications (1)

Publication Number Publication Date
JPS61224364A true true JPS61224364A (en) 1986-10-06

Family

ID=13269638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6483385A Pending JPS61224364A (en) 1985-03-28 1985-03-28 Manufacture of thin film transistor and manufacturing equipment

Country Status (1)

Country Link
JP (1) JPS61224364A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656511A (en) * 1989-09-04 1997-08-12 Canon Kabushiki Kaisha Manufacturing method for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656511A (en) * 1989-09-04 1997-08-12 Canon Kabushiki Kaisha Manufacturing method for semiconductor device

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