RU2676178C1 - Излучающий ультрафиолетовый свет нитридный полупроводниковый элемент - Google Patents

Излучающий ультрафиолетовый свет нитридный полупроводниковый элемент Download PDF

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RU2676178C1
RU2676178C1 RU2018105571A RU2018105571A RU2676178C1 RU 2676178 C1 RU2676178 C1 RU 2676178C1 RU 2018105571 A RU2018105571 A RU 2018105571A RU 2018105571 A RU2018105571 A RU 2018105571A RU 2676178 C1 RU2676178 C1 RU 2676178C1
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layer
active layer
light emitting
nitride semiconductor
aln
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RU2018105571A
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English (en)
Russian (ru)
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Митико КАНЕДА
Сирил ПЕРНО
Акира ХИРАНО
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Соко Кагаку Ко., Лтд.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
RU2018105571A 2015-07-21 2015-07-21 Излучающий ультрафиолетовый свет нитридный полупроводниковый элемент RU2676178C1 (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2015/070656 WO2017013729A1 (ja) 2015-07-21 2015-07-21 窒化物半導体紫外線発光素子

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RU2676178C1 true RU2676178C1 (ru) 2018-12-26

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Country Link
US (1) US10297715B2 (ja)
EP (1) EP3293774B1 (ja)
JP (1) JP6194138B2 (ja)
KR (1) KR101995152B1 (ja)
CN (1) CN107636847B (ja)
RU (1) RU2676178C1 (ja)
TW (2) TWI617051B (ja)
WO (1) WO2017013729A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2719339C1 (ru) * 2017-02-15 2020-04-17 Соко Кагаку Ко., Лтд. Способ изготовления нитридного полупроводникового излучающего ультрафиолетовое излучение элемента и нитридный полупроводниковый излучающий ультрафиолетовое излучение элемент

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* Cited by examiner, † Cited by third party
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JP6867180B2 (ja) * 2017-02-01 2021-04-28 日機装株式会社 半導体発光素子の製造方法
DE102017113383B4 (de) * 2017-06-19 2023-03-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
JP6998146B2 (ja) * 2017-08-03 2022-01-18 旭化成株式会社 紫外線発光素子及び紫外線照射モジュール
JP6649324B2 (ja) * 2017-08-09 2020-02-19 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光素子の製造方法
US11152543B2 (en) * 2017-11-22 2021-10-19 Soko Kagaku Co., Ltd. Nitride semiconductor light-emitting element
EP3754732B1 (en) * 2018-02-14 2023-04-12 Soko Kagaku Co., Ltd. Nitride semiconductor ultraviolet light-emitting element
JP6698925B1 (ja) 2019-08-06 2020-05-27 日機装株式会社 窒化物半導体発光素子
JP7141425B2 (ja) * 2020-04-28 2022-09-22 日機装株式会社 窒化物半導体発光素子
CN115699341A (zh) * 2020-06-24 2023-02-03 创光科学株式会社 氮化物半导体紫外线发光元件
US20230197889A1 (en) * 2020-06-24 2023-06-22 Nikkiso Co., Ltd. Nitride semiconductor ultraviolet light-emitting element and production method therefor
JP7462047B2 (ja) 2020-07-07 2024-04-04 日機装株式会社 窒化物半導体紫外線発光素子及びその製造方法
CN113054063B (zh) * 2021-02-04 2023-03-14 中国科学院宁波材料技术与工程研究所 紫外发光二极管、紫外led外延层结构及其制备方法

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JP2007101146A (ja) * 2005-10-07 2007-04-19 Matsushita Electric Ind Co Ltd ダクトファン
RU2412505C2 (ru) * 2005-08-24 2011-02-20 ФИЛИПС ЛЬЮМИЛДЗ ЛАЙТИНГ КОМПАНИ, ЭлЭлСи Iii-нитридное светоизлучающее устройство со светоизлучающей областью с двойной гетероструктурой
WO2013021464A1 (ja) * 2011-08-09 2013-02-14 創光科学株式会社 窒化物半導体紫外線発光素子
US20140103289A1 (en) * 2010-04-30 2014-04-17 Yitao Liao High efficiency ultraviolet light emitting diode with band structure potential fluctuations

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JP2002016000A (ja) 2000-06-27 2002-01-18 Sanyo Electric Co Ltd 窒化物系半導体素子および窒化物系半導体基板
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SE527445C2 (sv) * 2003-03-25 2006-03-07 Telia Ab Lägesanpassat skyddsintervall för OFDM-kommunikation
JP2004335635A (ja) * 2003-05-06 2004-11-25 National Institute Of Advanced Industrial & Technology 微傾斜基板を用いた窒化物半導体薄膜素子及びその素子の製造方法
JP2006060164A (ja) * 2004-08-24 2006-03-02 National Institute Of Advanced Industrial & Technology 窒化物半導体デバイスおよび窒化物半導体結晶成長方法
JP4304497B2 (ja) 2004-08-26 2009-07-29 パナソニック電工株式会社 半導体素子
JP4538476B2 (ja) 2007-08-27 2010-09-08 独立行政法人理化学研究所 半導体構造の形成方法
JP2010016092A (ja) 2008-07-02 2010-01-21 Sharp Corp 窒化物系半導体発光素子
JP2010135733A (ja) 2008-11-07 2010-06-17 Panasonic Corp 窒化物半導体レーザ装置及びその製造方法
KR101697486B1 (ko) 2009-11-10 2017-01-18 가부시키가이샤 도쿠야마 적층체의 제조방법
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RU2412505C2 (ru) * 2005-08-24 2011-02-20 ФИЛИПС ЛЬЮМИЛДЗ ЛАЙТИНГ КОМПАНИ, ЭлЭлСи Iii-нитридное светоизлучающее устройство со светоизлучающей областью с двойной гетероструктурой
JP2007101146A (ja) * 2005-10-07 2007-04-19 Matsushita Electric Ind Co Ltd ダクトファン
US20140103289A1 (en) * 2010-04-30 2014-04-17 Yitao Liao High efficiency ultraviolet light emitting diode with band structure potential fluctuations
WO2013021464A1 (ja) * 2011-08-09 2013-02-14 創光科学株式会社 窒化物半導体紫外線発光素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2719339C1 (ru) * 2017-02-15 2020-04-17 Соко Кагаку Ко., Лтд. Способ изготовления нитридного полупроводникового излучающего ультрафиолетовое излучение элемента и нитридный полупроводниковый излучающий ультрафиолетовое излучение элемент
US10643849B2 (en) 2017-02-15 2020-05-05 Soko Kagaku Co., Ltd. Manufacturing method of nitride semiconductor ultraviolet light emitting element, and nitride semiconductor ultraviolet light emitting element

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Publication number Publication date
TWI617051B (zh) 2018-03-01
JPWO2017013729A1 (ja) 2017-10-12
TW201813128A (zh) 2018-04-01
EP3293774B1 (en) 2020-03-18
CN107636847A (zh) 2018-01-26
KR101995152B1 (ko) 2019-07-02
US10297715B2 (en) 2019-05-21
TW201705529A (zh) 2017-02-01
US20180261725A1 (en) 2018-09-13
WO2017013729A1 (ja) 2017-01-26
JP6194138B2 (ja) 2017-09-06
TWI703741B (zh) 2020-09-01
EP3293774A4 (en) 2018-08-08
KR20180011242A (ko) 2018-01-31
CN107636847B (zh) 2020-07-28
EP3293774A1 (en) 2018-03-14

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