RU2650087C2 - Интегральная схема с матрицей сенсорных транзисторов, сенсорное устройство и способ измерения - Google Patents

Интегральная схема с матрицей сенсорных транзисторов, сенсорное устройство и способ измерения Download PDF

Info

Publication number
RU2650087C2
RU2650087C2 RU2015118418A RU2015118418A RU2650087C2 RU 2650087 C2 RU2650087 C2 RU 2650087C2 RU 2015118418 A RU2015118418 A RU 2015118418A RU 2015118418 A RU2015118418 A RU 2015118418A RU 2650087 C2 RU2650087 C2 RU 2650087C2
Authority
RU
Russia
Prior art keywords
transistor
integrated circuit
region
transistors
channel
Prior art date
Application number
RU2015118418A
Other languages
English (en)
Russian (ru)
Other versions
RU2015118418A (ru
Inventor
Йохан Хендрик КЛОТВИЙК
Марлен МЕСХЕР
ГРАФ Паскаль ДЕ
Боут МАРСЕЛИС
Original Assignee
Конинклейке Филипс Н.В.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Конинклейке Филипс Н.В. filed Critical Конинклейке Филипс Н.В.
Publication of RU2015118418A publication Critical patent/RU2015118418A/ru
Application granted granted Critical
Publication of RU2650087C2 publication Critical patent/RU2650087C2/ru

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
RU2015118418A 2012-10-16 2013-10-11 Интегральная схема с матрицей сенсорных транзисторов, сенсорное устройство и способ измерения RU2650087C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261714400P 2012-10-16 2012-10-16
US61/714,400 2012-10-16
PCT/IB2013/059296 WO2014060916A1 (en) 2012-10-16 2013-10-11 Integrated circuit with sensing transistor array, sensing apparatus and measuring method

Publications (2)

Publication Number Publication Date
RU2015118418A RU2015118418A (ru) 2016-12-10
RU2650087C2 true RU2650087C2 (ru) 2018-04-06

Family

ID=49911749

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2015118418A RU2650087C2 (ru) 2012-10-16 2013-10-11 Интегральная схема с матрицей сенсорных транзисторов, сенсорное устройство и способ измерения

Country Status (7)

Country Link
US (1) US10302590B2 (enExample)
EP (1) EP2909616A1 (enExample)
JP (1) JP6353454B2 (enExample)
CN (1) CN104737008B (enExample)
BR (1) BR112015008211B1 (enExample)
RU (1) RU2650087C2 (enExample)
WO (1) WO2014060916A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9797976B2 (en) * 2013-12-11 2017-10-24 Taiwan Semiconductor Manufacturing Company Biosensor calibration system and related method
US10067070B2 (en) * 2015-11-06 2018-09-04 Applied Materials, Inc. Particle monitoring device
EP3442804A4 (en) * 2016-09-23 2019-12-25 Hewlett-Packard Development Company, L.P. FLUID OUTPUT DEVICE AND PARTICLE DETECTOR
US10447202B2 (en) * 2017-02-08 2019-10-15 Texas Instruments Incorporated Apparatus for communication across a capacitively coupled channel
JP6740949B2 (ja) * 2017-03-31 2020-08-19 日立金属株式会社 ガスセンサ
US11531027B2 (en) * 2017-12-01 2022-12-20 University Of Florida Research Foundation, Inc. Low cost disposable medical sensor fabricated on glass, paper or plastics
FR3077926B1 (fr) * 2018-02-15 2023-04-14 St Microelectronics Crolles 2 Sas Dispositif de detection, en particulier incorpore dans un ph-metre, et procede de realisation correspondant.
ES3037403T3 (en) * 2018-09-21 2025-10-01 Teralytic Holdings Inc Extensible, multimodal sensor fusion platform for remote, proximal soil sensing
CN114674897B (zh) * 2022-03-28 2023-06-06 深圳大学 一种用于检测单细胞外pH值的探针型有机电化学晶体管传感器及其制备方法、检测方法
EP4332562A1 (en) * 2022-09-02 2024-03-06 IQ Biozoom Sp. z o.o. A mesfet biosensor and a biosensing kit
CN118191066B (zh) * 2024-05-16 2024-10-22 中国科学院上海微系统与信息技术研究所 一种双栅硅纳米线晶体管传感器及制作方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004003535A1 (en) * 2002-06-27 2004-01-08 Nanosys Inc. Planar nanowire based sensor elements, devices, systems and methods for using and making same
RU2257567C1 (ru) * 2004-05-19 2005-07-27 Воронежский государственный технический университет Твердотельный интегральный датчик газов
US20060246497A1 (en) * 2005-04-27 2006-11-02 Jung-Tang Huang Ultra-rapid DNA sequencing method with nano-transistors array based devices
KR100799577B1 (ko) * 2006-08-31 2008-01-30 한국전자통신연구원 가스 및 생화학물질 감지용 센서 제조 방법과 그 센서를포함하는 집적회로 및 그 제조 방법
US20080210987A1 (en) * 2005-05-31 2008-09-04 Thales Array of Fet Transistors Having a Nanotube or Nanowire Semiconductor Element and Corresponding Electronic Device, For the Detection of Analytes
US20100039126A1 (en) * 2006-11-17 2010-02-18 Trustees Of Boston University Nanochannel-based sensor system for use in detecting chemical or biological species
US20110021894A1 (en) * 2008-04-01 2011-01-27 Trustees Of Boston University Glucose sensor employing semiconductor nanoelectronic device
US20110147802A1 (en) * 2009-12-23 2011-06-23 Nokia Corporation Sensor
US20120036919A1 (en) * 2009-04-15 2012-02-16 Kamins Theodore I Nanowire sensor having a nanowire and electrically conductive film

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060263255A1 (en) * 2002-09-04 2006-11-23 Tzong-Ru Han Nanoelectronic sensor system and hydrogen-sensitive functionalization
US20060188934A1 (en) * 2005-02-22 2006-08-24 Ying-Lan Chang System and method for implementing a high-sensitivity sensor with improved stability
US8349604B2 (en) 2006-06-15 2013-01-08 University Of South Florida Nano-based device for detection of disease biomarkers and other target molecules
IL189576A0 (en) 2008-02-18 2008-12-29 Technion Res & Dev Foundation Chemically sensitive field effect transistors for explosive detection
WO2010023569A1 (en) * 2008-08-25 2010-03-04 Nxp B.V. Reducing capacitive charging in electronic devices
TWI383144B (zh) 2008-09-23 2013-01-21 Univ Nat Chiao Tung 感測元件、製造方法及其生物檢測系統
US20100219085A1 (en) * 2009-02-27 2010-09-02 Edwards Lifesciences Corporation Analyte Sensor Offset Normalization
KR101217576B1 (ko) 2009-09-22 2013-01-03 한국전자통신연구원 바이오 센서 및 그의 구동 방법

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004003535A1 (en) * 2002-06-27 2004-01-08 Nanosys Inc. Planar nanowire based sensor elements, devices, systems and methods for using and making same
RU2257567C1 (ru) * 2004-05-19 2005-07-27 Воронежский государственный технический университет Твердотельный интегральный датчик газов
US20060246497A1 (en) * 2005-04-27 2006-11-02 Jung-Tang Huang Ultra-rapid DNA sequencing method with nano-transistors array based devices
US20080210987A1 (en) * 2005-05-31 2008-09-04 Thales Array of Fet Transistors Having a Nanotube or Nanowire Semiconductor Element and Corresponding Electronic Device, For the Detection of Analytes
KR100799577B1 (ko) * 2006-08-31 2008-01-30 한국전자통신연구원 가스 및 생화학물질 감지용 센서 제조 방법과 그 센서를포함하는 집적회로 및 그 제조 방법
US20100039126A1 (en) * 2006-11-17 2010-02-18 Trustees Of Boston University Nanochannel-based sensor system for use in detecting chemical or biological species
US20110021894A1 (en) * 2008-04-01 2011-01-27 Trustees Of Boston University Glucose sensor employing semiconductor nanoelectronic device
US20120036919A1 (en) * 2009-04-15 2012-02-16 Kamins Theodore I Nanowire sensor having a nanowire and electrically conductive film
US20110147802A1 (en) * 2009-12-23 2011-06-23 Nokia Corporation Sensor

Also Published As

Publication number Publication date
US20150276667A1 (en) 2015-10-01
JP2016502644A (ja) 2016-01-28
EP2909616A1 (en) 2015-08-26
RU2015118418A (ru) 2016-12-10
BR112015008211A2 (pt) 2017-07-04
CN104737008B (zh) 2017-06-09
BR112015008211B1 (pt) 2020-05-19
US10302590B2 (en) 2019-05-28
WO2014060916A1 (en) 2014-04-24
CN104737008A (zh) 2015-06-24
JP6353454B2 (ja) 2018-07-04

Similar Documents

Publication Publication Date Title
RU2650087C2 (ru) Интегральная схема с матрицей сенсорных транзисторов, сенсорное устройство и способ измерения
US9989516B2 (en) Electro-diffusion enhanced bio-molecule charge detection using electrostatic interaction
CN104737009B (zh) 基于纳米线平台的宽动态范围流体传感器
US10274455B2 (en) Nanoelectronic sensor pixel
US20110031986A1 (en) Sub-Threshold Capfet Sensor for Sensing Analyte, A Method and System Thereof
Reddy Jr et al. High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing
US8585973B2 (en) Nano-sensor array
Lin et al. Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor
US12411134B2 (en) Apparatus and method for measuring hormone concentration in biofluids
US10739305B1 (en) Biosensing systems and methods using a FET
Zeng et al. A reference-less semiconductor ion sensor
Livi et al. Sensor system including silicon nanowire ion sensitive FET arrays and CMOS readout
Schwartz et al. DNA detection with top–down fabricated silicon nanowire transistor arrays in linear operation regime
CN104854448B (zh) 具有包括屏蔽层的纳米线传感器的集成电路、感测装置、测量方法以及制造方法
US11715772B1 (en) Field-controlled sensor architecture and related methods
Scarbolo Electrical characterization and modeling of pH and microparticle nanoelectronic sensors
Rollo A new design of an electrochemical (bio) sensor: High Aspect Ratio Fin-FET
Rossi et al. Hybrid system for complex AC sensing of nanowires