JP6353454B2 - 感知トランジスタアレイを備えた集積回路、感知装置及び測定方法 - Google Patents

感知トランジスタアレイを備えた集積回路、感知装置及び測定方法 Download PDF

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JP6353454B2
JP6353454B2 JP2015536269A JP2015536269A JP6353454B2 JP 6353454 B2 JP6353454 B2 JP 6353454B2 JP 2015536269 A JP2015536269 A JP 2015536269A JP 2015536269 A JP2015536269 A JP 2015536269A JP 6353454 B2 JP6353454 B2 JP 6353454B2
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transistor
integrated circuit
channel region
medium
functionalized
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JP2016502644A5 (enExample
JP2016502644A (ja
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ヨハン ヘンドリク クロートウェイク
ヨハン ヘンドリク クロートウェイク
マーレーン メッシャー
マーレーン メッシャー
クラーフ パスカル デ
クラーフ パスカル デ
バウト マルセリス
バウト マルセリス
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Koninklijke Philips NV
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2015536269A 2012-10-16 2013-10-11 感知トランジスタアレイを備えた集積回路、感知装置及び測定方法 Active JP6353454B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261714400P 2012-10-16 2012-10-16
US61/714,400 2012-10-16
PCT/IB2013/059296 WO2014060916A1 (en) 2012-10-16 2013-10-11 Integrated circuit with sensing transistor array, sensing apparatus and measuring method

Publications (3)

Publication Number Publication Date
JP2016502644A JP2016502644A (ja) 2016-01-28
JP2016502644A5 JP2016502644A5 (enExample) 2016-11-24
JP6353454B2 true JP6353454B2 (ja) 2018-07-04

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JP2015536269A Active JP6353454B2 (ja) 2012-10-16 2013-10-11 感知トランジスタアレイを備えた集積回路、感知装置及び測定方法

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Country Link
US (1) US10302590B2 (enExample)
EP (1) EP2909616A1 (enExample)
JP (1) JP6353454B2 (enExample)
CN (1) CN104737008B (enExample)
BR (1) BR112015008211B1 (enExample)
RU (1) RU2650087C2 (enExample)
WO (1) WO2014060916A1 (enExample)

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US9797976B2 (en) * 2013-12-11 2017-10-24 Taiwan Semiconductor Manufacturing Company Biosensor calibration system and related method
US10067070B2 (en) * 2015-11-06 2018-09-04 Applied Materials, Inc. Particle monitoring device
EP3442804A4 (en) * 2016-09-23 2019-12-25 Hewlett-Packard Development Company, L.P. FLUID OUTPUT DEVICE AND PARTICLE DETECTOR
US10447202B2 (en) * 2017-02-08 2019-10-15 Texas Instruments Incorporated Apparatus for communication across a capacitively coupled channel
JP6740949B2 (ja) * 2017-03-31 2020-08-19 日立金属株式会社 ガスセンサ
US11531027B2 (en) * 2017-12-01 2022-12-20 University Of Florida Research Foundation, Inc. Low cost disposable medical sensor fabricated on glass, paper or plastics
FR3077926B1 (fr) * 2018-02-15 2023-04-14 St Microelectronics Crolles 2 Sas Dispositif de detection, en particulier incorpore dans un ph-metre, et procede de realisation correspondant.
ES3037403T3 (en) * 2018-09-21 2025-10-01 Teralytic Holdings Inc Extensible, multimodal sensor fusion platform for remote, proximal soil sensing
CN114674897B (zh) * 2022-03-28 2023-06-06 深圳大学 一种用于检测单细胞外pH值的探针型有机电化学晶体管传感器及其制备方法、检测方法
EP4332562A1 (en) * 2022-09-02 2024-03-06 IQ Biozoom Sp. z o.o. A mesfet biosensor and a biosensing kit
CN118191066B (zh) * 2024-05-16 2024-10-22 中国科学院上海微系统与信息技术研究所 一种双栅硅纳米线晶体管传感器及制作方法

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AU2003258969A1 (en) 2002-06-27 2004-01-19 Nanosys Inc. Planar nanowire based sensor elements, devices, systems and methods for using and making same
US20060263255A1 (en) * 2002-09-04 2006-11-23 Tzong-Ru Han Nanoelectronic sensor system and hydrogen-sensitive functionalization
RU2257567C1 (ru) * 2004-05-19 2005-07-27 Воронежский государственный технический университет Твердотельный интегральный датчик газов
US20060188934A1 (en) * 2005-02-22 2006-08-24 Ying-Lan Chang System and method for implementing a high-sensitivity sensor with improved stability
TWI287041B (en) * 2005-04-27 2007-09-21 Jung-Tang Huang An ultra-rapid DNA sequencing method with nano-transistors array based devices
FR2886459B1 (fr) * 2005-05-31 2007-08-24 Thales Sa Reseau de transistors fet a nanotube ou nanofil semi-conducteur et dispositif electronique correspondant, pour la detection d'analytes
US8349604B2 (en) 2006-06-15 2013-01-08 University Of South Florida Nano-based device for detection of disease biomarkers and other target molecules
KR100799577B1 (ko) 2006-08-31 2008-01-30 한국전자통신연구원 가스 및 생화학물질 감지용 센서 제조 방법과 그 센서를포함하는 집적회로 및 그 제조 방법
WO2008063901A1 (en) * 2006-11-17 2008-05-29 Trustees Of Boston University Nanochannel-based sensor system for use in detecting chemical or biological species
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WO2009124111A2 (en) * 2008-04-01 2009-10-08 Trustees Of Boston University Glucose sensor employing semiconductor nanoelectronic device
WO2010023569A1 (en) * 2008-08-25 2010-03-04 Nxp B.V. Reducing capacitive charging in electronic devices
TWI383144B (zh) 2008-09-23 2013-01-21 Univ Nat Chiao Tung 感測元件、製造方法及其生物檢測系統
US20100219085A1 (en) * 2009-02-27 2010-09-02 Edwards Lifesciences Corporation Analyte Sensor Offset Normalization
WO2010120297A1 (en) 2009-04-15 2010-10-21 Hewlett-Packard Development Company, L.P Nanowire sensor having a nanowire and electrically conductive film
KR101217576B1 (ko) 2009-09-22 2013-01-03 한국전자통신연구원 바이오 센서 및 그의 구동 방법
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Also Published As

Publication number Publication date
US20150276667A1 (en) 2015-10-01
JP2016502644A (ja) 2016-01-28
EP2909616A1 (en) 2015-08-26
RU2015118418A (ru) 2016-12-10
BR112015008211A2 (pt) 2017-07-04
CN104737008B (zh) 2017-06-09
BR112015008211B1 (pt) 2020-05-19
US10302590B2 (en) 2019-05-28
RU2650087C2 (ru) 2018-04-06
WO2014060916A1 (en) 2014-04-24
CN104737008A (zh) 2015-06-24

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