RU2170475C2 - Кмоп-структура - Google Patents

Кмоп-структура Download PDF

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Publication number
RU2170475C2
RU2170475C2 RU98112593/28A RU98112593A RU2170475C2 RU 2170475 C2 RU2170475 C2 RU 2170475C2 RU 98112593/28 A RU98112593/28 A RU 98112593/28A RU 98112593 A RU98112593 A RU 98112593A RU 2170475 C2 RU2170475 C2 RU 2170475C2
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RU
Russia
Prior art keywords
substrate
region
mos
contacts
cmos structure
Prior art date
Application number
RU98112593/28A
Other languages
English (en)
Russian (ru)
Other versions
RU98112593A (ru
Inventor
Хольгер Седлак
Original Assignee
Сименс Акциенгезелльшафт
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Сименс Акциенгезелльшафт filed Critical Сименс Акциенгезелльшафт
Publication of RU98112593A publication Critical patent/RU98112593A/ru
Application granted granted Critical
Publication of RU2170475C2 publication Critical patent/RU2170475C2/ru

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
RU98112593/28A 1995-12-06 1996-11-18 Кмоп-структура RU2170475C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19545554A DE19545554A1 (de) 1995-12-06 1995-12-06 CMOS-Anordnung
DE19545554.1 1995-12-06

Publications (2)

Publication Number Publication Date
RU98112593A RU98112593A (ru) 2000-05-20
RU2170475C2 true RU2170475C2 (ru) 2001-07-10

Family

ID=7779372

Family Applications (1)

Application Number Title Priority Date Filing Date
RU98112593/28A RU2170475C2 (ru) 1995-12-06 1996-11-18 Кмоп-структура

Country Status (10)

Country Link
US (1) US6160295A (ref)
EP (1) EP0865669A2 (ref)
JP (1) JP3357069B2 (ref)
KR (1) KR100415129B1 (ref)
CN (1) CN1230903C (ref)
DE (1) DE19545554A1 (ref)
IN (1) IN190506B (ref)
RU (1) RU2170475C2 (ref)
UA (1) UA56148C2 (ref)
WO (1) WO1997021240A2 (ref)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992845A (en) * 1988-12-02 1991-02-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device having input/output buffer cells each comprising a plurality of transistor regions arranged in a single line
RU2018994C1 (ru) * 1992-03-31 1994-08-30 Константин Иванович Баринов Элемент памяти

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1549130A (en) * 1977-06-01 1979-08-01 Hughes Microelectronics Ltd Cm Monolithic integrated circuit
JPS5591162A (en) * 1978-12-27 1980-07-10 Fujitsu Ltd Semiconductor device
JPS58223362A (ja) * 1982-06-21 1983-12-24 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPH0669086B2 (ja) * 1983-03-29 1994-08-31 株式会社日立製作所 半導体装置
EP0197730A3 (en) * 1985-03-29 1987-08-19 Advanced Micro Devices, Inc. Latch-up resistant integrated circuit and method of manufacture
ATE75877T1 (de) * 1985-08-26 1992-05-15 Siemens Ag Integrierte schaltung in komplementaerer schaltungstechnik mit einem substratvorspannungs- generator und einer schottky-diode.
US5336911A (en) * 1988-05-10 1994-08-09 Seiko Epson Corporation Semiconductor device
JPH0396272A (ja) * 1989-09-08 1991-04-22 Toshiba Micro Electron Kk Ｃｍｏｓ半導体装置
KR0120572B1 (ko) * 1994-05-04 1997-10-20 김주용 반도체 소자 및 그 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992845A (en) * 1988-12-02 1991-02-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device having input/output buffer cells each comprising a plurality of transistor regions arranged in a single line
RU2018994C1 (ru) * 1992-03-31 1994-08-30 Константин Иванович Баринов Элемент памяти

Also Published As

Publication number Publication date
EP0865669A2 (de) 1998-09-23
CN1207829A (zh) 1999-02-10
US6160295A (en) 2000-12-12
JP3357069B2 (ja) 2002-12-16
UA56148C2 (uk) 2003-05-15
JP2000501247A (ja) 2000-02-02
CN1230903C (zh) 2005-12-07
DE19545554A1 (de) 1997-06-12
KR19990071877A (ko) 1999-09-27
WO1997021240A2 (de) 1997-06-12
KR100415129B1 (ko) 2004-04-13
WO1997021240A3 (de) 1997-07-31
IN190506B (ref) 2003-08-02

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20101119