RU2166222C2 - Полупроводниковый диод с низким сопротивлением контакта - Google Patents

Полупроводниковый диод с низким сопротивлением контакта Download PDF

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Publication number
RU2166222C2
RU2166222C2 RU98112013/28A RU98112013A RU2166222C2 RU 2166222 C2 RU2166222 C2 RU 2166222C2 RU 98112013/28 A RU98112013/28 A RU 98112013/28A RU 98112013 A RU98112013 A RU 98112013A RU 2166222 C2 RU2166222 C2 RU 2166222C2
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RU
Russia
Prior art keywords
type
layer
contact
energy
doped
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RU98112013/28A
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English (en)
Russian (ru)
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RU98112013A (ru
Inventor
Эшли Тимоти
Джон Прайс Грехем
Original Assignee
Дзе Секретэри Оф Стейт Фор Дефенс
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Application filed by Дзе Секретэри Оф Стейт Фор Дефенс filed Critical Дзе Секретэри Оф Стейт Фор Дефенс
Publication of RU98112013A publication Critical patent/RU98112013A/ru
Application granted granted Critical
Publication of RU2166222C2 publication Critical patent/RU2166222C2/ru

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
RU98112013/28A 1995-11-29 1996-11-27 Полупроводниковый диод с низким сопротивлением контакта RU2166222C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9524414.1 1995-11-29
GBGB9524414.1A GB9524414D0 (en) 1995-11-29 1995-11-29 Low resistance contact semiconductor device

Publications (2)

Publication Number Publication Date
RU98112013A RU98112013A (ru) 2000-04-20
RU2166222C2 true RU2166222C2 (ru) 2001-04-27

Family

ID=10784642

Family Applications (1)

Application Number Title Priority Date Filing Date
RU98112013/28A RU2166222C2 (ru) 1995-11-29 1996-11-27 Полупроводниковый диод с низким сопротивлением контакта

Country Status (10)

Country Link
US (2) US6133590A (OSRAM)
EP (1) EP0864180B1 (OSRAM)
JP (1) JP2000501238A (OSRAM)
KR (1) KR19990071863A (OSRAM)
AU (1) AU721907B2 (OSRAM)
CA (1) CA2238952C (OSRAM)
DE (1) DE69632961T2 (OSRAM)
GB (2) GB9524414D0 (OSRAM)
RU (1) RU2166222C2 (OSRAM)
WO (1) WO1997020353A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2200358C1 (ru) * 2001-06-05 2003-03-10 Хан Владимир Александрович Полупроводниковый излучающий диод

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ES2011531A6 (es) * 1987-12-10 1990-01-16 Poyer Michael Dispositivo de seguridad para aparatos grabadores o reproductores de cassettes de video.
DE19703612A1 (de) * 1997-01-31 1998-08-06 Siemens Ag Halbleiterlaser-Bauelement
US5936266A (en) * 1997-07-22 1999-08-10 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods with tunnel contact hole sources
GB0012925D0 (en) 2000-05-30 2000-07-19 Secr Defence Bipolar transistor
DE10057698A1 (de) * 2000-11-21 2002-06-06 Osram Opto Semiconductors Gmbh Übereinander gestapelte Halbleiter-Diodenlaser
US6905900B1 (en) 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
US7065124B2 (en) 2000-11-28 2006-06-20 Finlsar Corporation Electron affinity engineered VCSELs
GB0030204D0 (en) * 2000-12-12 2001-01-24 Secr Defence Reduced noise semiconductor photodetector
JP2003086898A (ja) * 2001-09-07 2003-03-20 Nec Corp 窒化ガリウム系半導体レーザ
US6965626B2 (en) 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
US6813293B2 (en) 2002-11-21 2004-11-02 Finisar Corporation Long wavelength VCSEL with tunnel junction, and implant
US7170097B2 (en) * 2003-02-14 2007-01-30 Cree, Inc. Inverted light emitting diode on conductive substrate
US7298942B2 (en) 2003-06-06 2007-11-20 Finisar Corporation Pluggable optical optic system having a lens fiber stop
US7433381B2 (en) 2003-06-25 2008-10-07 Finisar Corporation InP based long wavelength VCSEL
DE102004031950A1 (de) * 2003-06-26 2005-02-10 Kyocera Corp. Halbleiter/Elektroden-Kontaktstruktur und eine solche verwendendes Halbleiterbauteil
US7277461B2 (en) 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
US7075962B2 (en) 2003-06-27 2006-07-11 Finisar Corporation VCSEL having thermal management
US7054345B2 (en) 2003-06-27 2006-05-30 Finisar Corporation Enhanced lateral oxidation
US7149383B2 (en) 2003-06-30 2006-12-12 Finisar Corporation Optical system with reduced back reflection
US6961489B2 (en) 2003-06-30 2005-11-01 Finisar Corporation High speed optical system
US7210857B2 (en) 2003-07-16 2007-05-01 Finisar Corporation Optical coupling system
US6887801B2 (en) 2003-07-18 2005-05-03 Finisar Corporation Edge bead control method and apparatus
US7019330B2 (en) * 2003-08-28 2006-03-28 Lumileds Lighting U.S., Llc Resonant cavity light emitting device
US7031363B2 (en) 2003-10-29 2006-04-18 Finisar Corporation Long wavelength VCSEL device processing
DE102004047313B3 (de) * 2004-09-29 2006-03-30 Siced Electronics Development Gmbh & Co. Kg Halbleiteranordnung mit einem Tunnelkontakt und Verfahren zu deren Herstellung
US7274040B2 (en) * 2004-10-06 2007-09-25 Philips Lumileds Lighting Company, Llc Contact and omnidirectional reflective mirror for flip chipped light emitting devices
JP2006313773A (ja) * 2005-05-06 2006-11-16 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
US7535034B2 (en) 2006-02-27 2009-05-19 The Board Of Trustees Of The University Of Illinois PNP light emitting transistor and method
US7813396B2 (en) 2007-10-12 2010-10-12 The Board Of Trustees Of The University Of Illinois Transistor laser devices and methods
WO2009051664A2 (en) 2007-10-12 2009-04-23 The Board Of Trustees Of The University Of Illinois Light emitting and lasing semiconductor devices and methods
TWI427824B (zh) 2008-03-14 2014-02-21 旭化成電子材料元件股份有限公司 紅外線發光元件
JP5093063B2 (ja) 2008-11-11 2012-12-05 住友電気工業株式会社 集積化半導体光素子及び半導体光装置
TWI407575B (zh) * 2009-05-12 2013-09-01 Univ Tsukuba A semiconductor device, a method for manufacturing the same, and a solar battery
GB201000756D0 (en) 2010-01-18 2010-03-03 Gas Sensing Solutions Ltd Gas sensor with radiation guide
GB201018417D0 (en) 2010-11-01 2010-12-15 Gas Sensing Solutions Ltd Apparatus and method for generating light pulses from LEDs in optical absorption gas sensors
GB201018418D0 (en) 2010-11-01 2010-12-15 Gas Sensing Solutions Ltd Temperature calibration methods and apparatus for optical absorption gas sensors, and optical absorption gas sensors thereby calibrated
JP7355740B2 (ja) * 2018-08-24 2023-10-03 ソニーセミコンダクタソリューションズ株式会社 発光素子

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US5338944A (en) * 1993-09-22 1994-08-16 Cree Research, Inc. Blue light-emitting diode with degenerate junction structure

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US5166761A (en) * 1991-04-01 1992-11-24 Midwest Research Institute Tunnel junction multiple wavelength light-emitting diodes
US5892784A (en) * 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive p-common surface emitting laser fabricated on n+ substrate

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Publication number Priority date Publication date Assignee Title
US5338944A (en) * 1993-09-22 1994-08-16 Cree Research, Inc. Blue light-emitting diode with degenerate junction structure

Non-Patent Citations (1)

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Ashley T. "Electronic and optoelectronic devices in narrow Ga P semiconductors", Institute of physics conference series. International conf. materials for non - linear and electrooptics, № 144, 1995, р.345-352. *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2200358C1 (ru) * 2001-06-05 2003-03-10 Хан Владимир Александрович Полупроводниковый излучающий диод

Also Published As

Publication number Publication date
AU721907B2 (en) 2000-07-20
CA2238952C (en) 2004-05-25
DE69632961T2 (de) 2005-08-25
EP0864180B1 (en) 2004-07-21
KR19990071863A (ko) 1999-09-27
CA2238952A1 (en) 1997-06-05
JP2000501238A (ja) 2000-02-02
GB2321783B (en) 2000-10-18
GB2321783A (en) 1998-08-05
GB9810627D0 (en) 1998-07-15
DE69632961D1 (de) 2004-08-26
AU7636096A (en) 1997-06-19
WO1997020353A1 (en) 1997-06-05
US6455879B1 (en) 2002-09-24
US6133590A (en) 2000-10-17
EP0864180A1 (en) 1998-09-16
GB9524414D0 (en) 1996-01-31

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Effective date: 20151029

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