RU2017125504A3 - - Google Patents

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Publication number
RU2017125504A3
RU2017125504A3 RU2017125504A RU2017125504A RU2017125504A3 RU 2017125504 A3 RU2017125504 A3 RU 2017125504A3 RU 2017125504 A RU2017125504 A RU 2017125504A RU 2017125504 A RU2017125504 A RU 2017125504A RU 2017125504 A3 RU2017125504 A3 RU 2017125504A3
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RU
Russia
Application number
RU2017125504A
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Russian (ru)
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RU2017125504A (ru
RU2696335C2 (ru
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of RU2017125504A publication Critical patent/RU2017125504A/ru
Publication of RU2017125504A3 publication Critical patent/RU2017125504A3/ru
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Publication of RU2696335C2 publication Critical patent/RU2696335C2/ru

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4865—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Semiconductor Lasers (AREA)
  • Measurement Of Optical Distance (AREA)
RU2017125504A 2014-12-19 2015-12-11 Модуль лазерного датчика RU2696335C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14199083 2014-12-19
EP14199083.8 2014-12-19
PCT/EP2015/079396 WO2016096647A1 (en) 2014-12-19 2015-12-11 Laser sensor module

Publications (3)

Publication Number Publication Date
RU2017125504A RU2017125504A (ru) 2019-01-21
RU2017125504A3 true RU2017125504A3 (OSRAM) 2019-05-22
RU2696335C2 RU2696335C2 (ru) 2019-08-01

Family

ID=52144466

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2017125504A RU2696335C2 (ru) 2014-12-19 2015-12-11 Модуль лазерного датчика

Country Status (7)

Country Link
US (1) US10680411B2 (OSRAM)
EP (1) EP3235078B1 (OSRAM)
JP (1) JP6849593B2 (OSRAM)
CN (1) CN107005023B (OSRAM)
BR (1) BR112017012605A2 (OSRAM)
RU (1) RU2696335C2 (OSRAM)
WO (1) WO2016096647A1 (OSRAM)

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EP3493339B1 (en) 2017-12-04 2022-11-09 ams AG Semiconductor device and method for time-of-flight and proximity measurements
DK3517998T3 (da) * 2018-01-24 2024-02-19 Leica Geosystems Ag Luftbåren lidar pulsfrekvensmodulation
EP3540879A1 (en) * 2018-03-15 2019-09-18 Koninklijke Philips N.V. Vertical cavity surface emitting laser device with integrated tunnel junction
WO2019227975A1 (zh) 2018-05-30 2019-12-05 Oppo广东移动通信有限公司 激光投射器的控制系统、终端和激光投射器的控制方法
CN108963750B (zh) * 2018-07-18 2023-08-29 度亘激光技术(苏州)有限公司 一种vcsel和apd集成芯片及其制备方法
DE102019215831A1 (de) * 2019-10-15 2021-04-15 Robert Bosch Gmbh Verfahren zur Erzeugung von Lichtpulsen eines Lidar-Systems
DE112021000941T5 (de) 2020-02-07 2022-12-08 Ams Sensors Asia Pte. Ltd. Sensormethode und Sensorsystem
US11594852B2 (en) * 2020-05-08 2023-02-28 Microsoft Technology Licensing, Llc Pulse shaping to reduce pulse history effects in pulsed lasers
US11300667B1 (en) 2021-03-26 2022-04-12 Aeye, Inc. Hyper temporal lidar with dynamic laser control for scan line shot scheduling
US20230044929A1 (en) 2021-03-26 2023-02-09 Aeye, Inc. Multi-Lens Lidar Receiver with Multiple Readout Channels
US11822016B2 (en) 2021-03-26 2023-11-21 Aeye, Inc. Hyper temporal lidar using multiple matched filters to orient a lidar system to a frame of reference
US11486977B2 (en) 2021-03-26 2022-11-01 Aeye, Inc. Hyper temporal lidar with pulse burst scheduling
US20220308214A1 (en) 2021-03-26 2022-09-29 Aeye, Inc. Hyper Temporal Lidar with Controllable Detection Intervals Based on Range Estimates
US11630188B1 (en) * 2021-03-26 2023-04-18 Aeye, Inc. Hyper temporal lidar with dynamic laser control using safety models
US11635495B1 (en) 2021-03-26 2023-04-25 Aeye, Inc. Hyper temporal lidar with controllable tilt amplitude for a variable amplitude scan mirror
JP2023116281A (ja) * 2022-02-09 2023-08-22 株式会社小糸製作所 投光器、及び測定装置
DE102022103899B4 (de) 2022-02-18 2025-03-20 Schwind Eye-Tech-Solutions Gmbh Behandlungsvorrichtung für eine Augenbehandlung, Verfahren, Computerprogramm und computerlesbares Medium
DE102023104674A1 (de) * 2023-02-27 2024-08-29 Trumpf Photonic Components Gmbh VCSEL zum Erzeugen eines Laserlichts

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Also Published As

Publication number Publication date
RU2017125504A (ru) 2019-01-21
CN107005023B (zh) 2020-03-24
WO2016096647A1 (en) 2016-06-23
US10680411B2 (en) 2020-06-09
JP2018505548A (ja) 2018-02-22
EP3235078B1 (en) 2022-02-02
JP6849593B2 (ja) 2021-03-24
BR112017012605A2 (pt) 2018-01-16
EP3235078A1 (en) 2017-10-25
CN107005023A (zh) 2017-08-01
RU2696335C2 (ru) 2019-08-01
US20190097393A1 (en) 2019-03-28

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Legal Events

Date Code Title Description
MM4A The patent is invalid due to non-payment of fees

Effective date: 20201212