RU2015118924A - Каскадная солнечная батарея - Google Patents

Каскадная солнечная батарея Download PDF

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RU2015118924A
RU2015118924A RU2015118924A RU2015118924A RU2015118924A RU 2015118924 A RU2015118924 A RU 2015118924A RU 2015118924 A RU2015118924 A RU 2015118924A RU 2015118924 A RU2015118924 A RU 2015118924A RU 2015118924 A RU2015118924 A RU 2015118924A
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Вольфганг ГУТЕР
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АЦУР СПЭЙС Золяр Пауер ГмбХ
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Abstract

1. Каскадная солнечная батарея, содержащая- первую полупроводниковую солнечную батарею (GA), причем в первой полупроводниковой солнечной батарее (GA) имеется р-n переход из первого материала с первой константой решетки- вторую полупроводниковую солнечную батарею (IGA, IGA1), причем во второй полупроводниковой солнечной батарее (IGA, IGA1) имеется р-n переход из второго материала со второй константой решетки, и- первая константа решетки меньше, чем вторая константа решетки, и- метаморфный буфер (40), причем метаморфный буфер (40) содержитпоследовательность из первого, нижнего слоя AllnGaAs или AllnGaP, и второго, среднего слоя AllnGaAs или AllnGaP, и третьего, верхнего слоя AllnGaAs или AllnGaP, и метаморфный буфер (40) сформирован между первой полупроводниковой солнечной батареей (GA) и второй полупроводниковой солнечной батареей (IGA, IGA1), и константа решетки (а) метаморфного буфера (40) изменяется по толщине метаморфного буфера (40),отличающаяся тем, чтомежду по меньшей мере двумя слоями (МР1, МР2, МР3, МР4, МР5, МР6) метаморфного буфера (40) константа решетки (а) и содержание индия увеличиваются, а содержание алюминия уменьшается.2. Каскадная солнечная батарея по п. 1, отличающаяся тем, что в последовательности из трех слоев (МР1, МР2, МР3, МР4, МР5, МР6) метаморфного буфера (40) содержание индия и константа решетки (а) от одного слоя (МР1, МР2, МР3, МР4, МР5, МР6) к следующему слою (МР1, МР2, МР3, МР4, МР5, МР6) соответственно возрастает, а содержание алюминия соответственно снижается.3. Каскадная солнечная батарея по п. 1, отличающаяся тем, что между по меньшей мере двумя слоями (МР1, МР2, МР3, МР4, МР5, МР6)метаморфного буфера (40) содержание индия возрастает по меньшей мере на 1%, а содержание алюминия по меньшей мере на 1% снижается.4. Каскадная солнечная батарея по п. 1, отличающаяся тем, что константа решетки

Claims (15)

1. Каскадная солнечная батарея, содержащая
- первую полупроводниковую солнечную батарею (GA), причем в первой полупроводниковой солнечной батарее (GA) имеется р-n переход из первого материала с первой константой решетки
- вторую полупроводниковую солнечную батарею (IGA, IGA1), причем во второй полупроводниковой солнечной батарее (IGA, IGA1) имеется р-n переход из второго материала со второй константой решетки, и
- первая константа решетки меньше, чем вторая константа решетки, и
- метаморфный буфер (40), причем метаморфный буфер (40) содержит
последовательность из первого, нижнего слоя AllnGaAs или AllnGaP, и второго, среднего слоя AllnGaAs или AllnGaP, и третьего, верхнего слоя AllnGaAs или AllnGaP, и метаморфный буфер (40) сформирован между первой полупроводниковой солнечной батареей (GA) и второй полупроводниковой солнечной батареей (IGA, IGA1), и константа решетки (а) метаморфного буфера (40) изменяется по толщине метаморфного буфера (40),
отличающаяся тем, что
между по меньшей мере двумя слоями (МР1, МР2, МР3, МР4, МР5, МР6) метаморфного буфера (40) константа решетки (а) и содержание индия увеличиваются, а содержание алюминия уменьшается.
2. Каскадная солнечная батарея по п. 1, отличающаяся тем, что в последовательности из трех слоев (МР1, МР2, МР3, МР4, МР5, МР6) метаморфного буфера (40) содержание индия и константа решетки (а) от одного слоя (МР1, МР2, МР3, МР4, МР5, МР6) к следующему слою (МР1, МР2, МР3, МР4, МР5, МР6) соответственно возрастает, а содержание алюминия соответственно снижается.
3. Каскадная солнечная батарея по п. 1, отличающаяся тем, что между по меньшей мере двумя слоями (МР1, МР2, МР3, МР4, МР5, МР6)
метаморфного буфера (40) содержание индия возрастает по меньшей мере на 1%, а содержание алюминия по меньшей мере на 1% снижается.
4. Каскадная солнечная батарея по п. 1, отличающаяся тем, что константа решетки метаморфного буфера в направлении второй полупроводниковой солнечной батареи (IGA) возрастает от слоя к слою соответственно по меньшей мере на 0,003 Å.
5. Каскадная солнечная батарея по п. 1, отличающаяся тем, что константа решетки метаморфного буфера в направлении второй полупроводниковой солнечной батареи (IGA) возрастает от слоя к слою соответственно предпочтительно по меньшей мере на 0,005 Å.
6. Каскадная солнечная батарея по п. 1, отличающаяся тем, что один слой метаморфного буфера имеет третью константу решетки, которая больше, чем константа решетки второй полупроводниковой солнечной батареи (IGA).
7. Каскадная солнечная батарея по п. 1, отличающаяся тем, что в пределах последовательности из трех слоев (МР1, МР2, МР3, МР4, МР5, МР6) метаморфного буфера (40) сформированы только слои AllnGaAs или только слои AllnGaP.
8. Каскадная солнечная батарея по п. 1, отличающаяся тем, что в последовательности из трех слоев (МР1, МР2, МР3, МР4, МР5, МР6) первый слой (МР1, МР2, МР3, МР4, МР5, МР6) имеет меньшую константу решетки (а) и меньшую нанотвердость (NH), чем второй слой (МР1, МР2, МР3, МР4, МР5, МР6), а второй слой (МР1, МР2, МР3, МР4, МР5, МР6) имеет меньшую константу решетки (а) и меньшую нанотвердость (NH), чем третий слой (МР1, МР2, МР3, МР4, МР5, МР6).
9. Каскадная солнечная батарея по п. 1, отличающаяся тем, что в последовательности слоев (МР1, МР2, МР3, МР4, МР5, МР6) первый слой
(МР1, МР2, МР3, МР4, МР5, МР6) последовательности характеризуется большей константой решетки (а), чем первая полупроводниковая солнечная батарея (GA).
10. Каскадная солнечная батарея по п. 1, отличающаяся тем, что в последовательности из четырех слоев (МР1, МР2, МР3, МР4, МР5, МР6) предусмотрен четвертый слой (МР1, МР2, МР3, МР4, МР5, МР6) и четвертый слой (МР1, МР2, МР3, МР4, МР5, МР6) расположенный выше третьего слоя (МР1, МР2, МР3, МР4, МР5, МР6) и соединенный с третьим слоем (МР1, МР2, МР3, МР4, МР5, МР6) с материальным замыканием, причем четвертый слой (МР1, МР2, МР3, МР4, МР5, МР6) характеризуется меньшей константой решетки (а), чем третий слой (МР1, МР2, МР3, МР4, МР5, МР6).
11. Каскадная солнечная батарея по п. 1, отличающаяся тем, что в последовательности из трех слоев первый слой (МР1, МР2, МР3, МР4, МР5, МР6) соединен со вторым слоем (МР1, МР2, МР3, МР4, МР5, МР6), а второй слой (МР1, МР2, МР3, МР4, МР5, МР6) соединен с третьим слоем (МР1, МР2, МР3, МР4, МР5, МР6) с материальным замыканием.
12. Каскадная солнечная батарея по п. 1, отличающаяся тем, что предусмотрена третья полупроводниковая солнечная батарея (IGA2), и между второй полупроводниковой солнечной батареей (IGA, IGA1) и третьей полупроводниковой солнечной батареей (IGA2) сформирован еще один метаморфный буфер (50).
13. Каскадная солнечная батарея по одному из пп. 1-12, отличающаяся тем, что каждая из полупроводниковых солнечных батарей (GA, IGA, IGA1, IGA2) содержит P/N переход.
14. Каскадная солнечная батарея по одному из пп. 1-12, отличающаяся тем, что метаморфные буферные слои (МР1, МР2, МР3, МР4, МР5, МР6) не являются частью pn-перехода туннельного диода.
15. Каскадная солнечная батарея по одному из пп. 1-11, отличающаяся тем, что предусмотрен еще один метаморфный буфер (50), причем между двумя полупроводниковыми солнечными батареями расположена последовательность двух метаморфных буфера (40, 50).
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RU2606756C2 (ru) 2017-01-10
EP2947702B1 (de) 2019-03-20
US20150340533A1 (en) 2015-11-26
CN105304739B (zh) 2017-11-07
US10566486B2 (en) 2020-02-18
CN105304739A (zh) 2016-02-03

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