RO83540B1 - Aliaj de siliciu amorf si procedeu de obtinere a lui - Google Patents
Aliaj de siliciu amorf si procedeu de obtinere a luiInfo
- Publication number
- RO83540B1 RO83540B1 RO107426A RO10742682A RO83540B1 RO 83540 B1 RO83540 B1 RO 83540B1 RO 107426 A RO107426 A RO 107426A RO 10742682 A RO10742682 A RO 10742682A RO 83540 B1 RO83540 B1 RO 83540B1
- Authority
- RO
- Romania
- Prior art keywords
- nitrogen
- silicon
- band
- depositing
- hydrogen
- Prior art date
Links
- 229910045601 alloy Inorganic materials 0.000 title abstract 3
- 239000000956 alloy Substances 0.000 title abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 9
- 229910052757 nitrogen Inorganic materials 0.000 abstract 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910000676 Si alloy Inorganic materials 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 150000003376 silicon Chemical class 0.000 abstract 1
- 239000002210 silicon-based material Substances 0.000 abstract 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Inventia se refera la un aliaj de siliciu amorf dopabil, cu banda interzisa controlabila între 1,5 si 3 eV si la un procedeu pentru obtinerea lui, utilizabil pentru realizarea de dispozitive semiconductoare. Aliajul de siliciu, conform inventiei, contine siliciu si hidrogen, în aceeasi retea încorporîndu-se si azot, proportia azot/siliciu fiind de 1/100 pîna la 1/1 pentru controlul benzii interzise de la 1,6 pîna la 2,2 eV, cu mentinerea proprietatilor fotoconductoare ca si pentru trecerea treptata a materialului de la caracterul semiconductor amorf dopabil la acela de izolator cu banda interzisa de peste 3 eV. Procedeul de obtinere a aliajului, conform inventiei, consta în depunerea prin descarcare luminiscenta pe un suport izolator sau conductor a unui material de tip siliciu hidrogenat, depunerea efectuîndu-se din silan diluat, în gaze purtatoare uzuale, argon, azot, hidrogen, la care se adauga si azot suplimentar pentru asigurarea raportului silan-azot, necesar pentru obtinerea lungimii dorite de banda.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO107426A RO83540B1 (ro) | 1982-05-04 | 1982-05-04 | Aliaj de siliciu amorf si procedeu de obtinere a lui |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO107426A RO83540B1 (ro) | 1982-05-04 | 1982-05-04 | Aliaj de siliciu amorf si procedeu de obtinere a lui |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RO83540A2 RO83540A2 (ro) | 1984-04-12 |
| RO83540B1 true RO83540B1 (ro) | 1984-05-30 |
Family
ID=20111476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RO107426A RO83540B1 (ro) | 1982-05-04 | 1982-05-04 | Aliaj de siliciu amorf si procedeu de obtinere a lui |
Country Status (1)
| Country | Link |
|---|---|
| RO (1) | RO83540B1 (ro) |
-
1982
- 1982-05-04 RO RO107426A patent/RO83540B1/ro unknown
Also Published As
| Publication number | Publication date |
|---|---|
| RO83540A2 (ro) | 1984-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES8306381A1 (es) | Procedimiento para preparar polisiloxanos modificados con organotitanatos. | |
| GB1317014A (en) | Contact system for semiconductor devices | |
| ES2074041T3 (es) | Materiales de alimentacion de deposito y materiales de dopado utilizados en la fabricacion de las aleaciones de silicio amorfo hidrogenado para dispositivos fotovoltaicos y otros dispositivos semi-conductores. | |
| RO83540B1 (ro) | Aliaj de siliciu amorf si procedeu de obtinere a lui | |
| KR970003428A (ko) | 에피탁시 반도체 웨이퍼(epitaxially coated semiconductor wafer)의 제조방법 | |
| JPS57104254A (en) | Lateral-transistor | |
| JPS57196542A (en) | Semiconductor integrated circuit device and manufacture thereof | |
| ES2070911T3 (es) | Procedimiento de preparacion de organo-silanos. | |
| JPS52109883A (en) | Manufacture of silicon semiconductor device | |
| JPS5410688A (en) | Production of semiconductor device | |
| JPS5380183A (en) | Semiconductor device | |
| JPS5413279A (en) | Manufacture for semiconductor integrated circuit device | |
| JPS5688362A (en) | Vertical type power mos transistor | |
| JPS5350688A (en) | Production of integrated circuit device | |
| GB610109A (en) | Improvements relating to terminals for electric cables | |
| Astrova et al. | Some Properties of Trapping Levels Formed as a Result of High-Temperature Treatment of n-Type Silicon | |
| GB681607A (en) | Improvements in insulators for high frequency open wire transmission and the like | |
| GB1025106A (en) | Improvements relating to the production of thermistors | |
| JPS5326663A (en) | Manu facture of semiconductor device | |
| JPS574155A (en) | Semiconductor device | |
| JPS5245268A (en) | Process for production of semiconductor integfrated circuit | |
| JPS5399870A (en) | Manufacture of semiconductor device | |
| JPS51147278A (en) | Manufacturing process of mis-type semiconductor device | |
| JPS5841785B2 (ja) | 半導体装置 | |
| JPS646303A (en) | Wire conductor for audio equipment |