RO82458B1 - Procedeu de fabricare a diodei varicap - Google Patents
Procedeu de fabricare a diodei varicapInfo
- Publication number
- RO82458B1 RO82458B1 RO104697A RO10469781A RO82458B1 RO 82458 B1 RO82458 B1 RO 82458B1 RO 104697 A RO104697 A RO 104697A RO 10469781 A RO10469781 A RO 10469781A RO 82458 B1 RO82458 B1 RO 82458B1
- Authority
- RO
- Romania
- Prior art keywords
- layer
- implantation
- doping
- manufacturing
- crystallographic
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000002513 implantation Methods 0.000 abstract 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 239000007943 implant Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Inventia se refera la un procedeu de fabricare a unei diode varicap. Procedeul, conform inventiei, cuprinde oxidarea termica a plachetelor din Si epitaxial pe care urmeaza sa fie realizate diodele varicap, mascarea si corodarea pentru realizarea ferestrelor de dopare si contactare, etapele de dopare facându-se cu implantare ionica, pentru obtinerea stratului de tip n la + dopat cu fosfor, utilizându-se o implantare multiplu canalizata, cu energii mari, doze scazute, curentul fasciculuilui corespunzator directiei retelei cristalografice a Si, mentinându-se sub unghiul critic de canalizare, implantare care se realizeaza direct pe placheta din Si de pe care a fost îndepartat stratul de oxid, pentru obtinerea stratului de dopare de tip p la ++cu bor facându-se o implantare multipla, amorfaprintr-un strat de oxid cu energii scazute, doze mari, curentul fasciculului de ioni cât mai mare, iar directia fasciculului deviata fata de directia retelei cristalografice Si, dupa implantul de fosfor...
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO81104697A RO82458A2 (ro) | 1981-06-26 | 1981-06-26 | Procedeu de fabricare a diodei varicap |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO81104697A RO82458A2 (ro) | 1981-06-26 | 1981-06-26 | Procedeu de fabricare a diodei varicap |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RO82458B1 true RO82458B1 (ro) | 1983-08-30 |
| RO82458A2 RO82458A2 (ro) | 1983-09-26 |
Family
ID=20110146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RO81104697A RO82458A2 (ro) | 1981-06-26 | 1981-06-26 | Procedeu de fabricare a diodei varicap |
Country Status (1)
| Country | Link |
|---|---|
| RO (1) | RO82458A2 (ro) |
-
1981
- 1981-06-26 RO RO81104697A patent/RO82458A2/ro unknown
Also Published As
| Publication number | Publication date |
|---|---|
| RO82458A2 (ro) | 1983-09-26 |
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