JPS57138132A - Manufacture of semiconductor device through ion implantation - Google Patents
Manufacture of semiconductor device through ion implantationInfo
- Publication number
- JPS57138132A JPS57138132A JP2301681A JP2301681A JPS57138132A JP S57138132 A JPS57138132 A JP S57138132A JP 2301681 A JP2301681 A JP 2301681A JP 2301681 A JP2301681 A JP 2301681A JP S57138132 A JPS57138132 A JP S57138132A
- Authority
- JP
- Japan
- Prior art keywords
- implantation
- condition
- ions
- junction
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005468 ion implantation Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 150000002500 ions Chemical class 0.000 abstract 4
- 238000002513 implantation Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To manufacture the device having a desired impurity profile efficiently in a short time by implanting ions having low concentration at two or more of plural times while changing energy in a junction forming process through ion implantation. CONSTITUTION:Two conductive type determined impurities are formed to the main surface of one conductive type substrate through the ion implantation, and the device having a P-N junction is manufactured in the substrate. In the ion implanting process, ions are implanted at times such as twice when the concentration of the surface and concentration near the junction can be brought to desired values through the implantation of a condition such as 100kev, 5X10<15>cm<-2>. Primary implantation is executed at a condition such as 150kev, 7X10<13>cm<-2>, and secondary implantation is executed under the condition of 40kev, 6X10<13>cm<-2>. Accordingly, since the profile equal to the case when ions are implanted once can be formed, th process can be completed in a short time even when using a low current implanting device, and the efficiency of the device can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2301681A JPS57138132A (en) | 1981-02-20 | 1981-02-20 | Manufacture of semiconductor device through ion implantation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2301681A JPS57138132A (en) | 1981-02-20 | 1981-02-20 | Manufacture of semiconductor device through ion implantation |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57138132A true JPS57138132A (en) | 1982-08-26 |
Family
ID=12098688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2301681A Pending JPS57138132A (en) | 1981-02-20 | 1981-02-20 | Manufacture of semiconductor device through ion implantation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57138132A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59200416A (en) * | 1983-04-28 | 1984-11-13 | Toshiba Corp | Manufacture of semiconductor device |
JPH02263435A (en) * | 1988-10-31 | 1990-10-26 | Sharp Corp | Ion implanting method and apparatus |
-
1981
- 1981-02-20 JP JP2301681A patent/JPS57138132A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59200416A (en) * | 1983-04-28 | 1984-11-13 | Toshiba Corp | Manufacture of semiconductor device |
JPH02263435A (en) * | 1988-10-31 | 1990-10-26 | Sharp Corp | Ion implanting method and apparatus |
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