JPS57138132A - Manufacture of semiconductor device through ion implantation - Google Patents

Manufacture of semiconductor device through ion implantation

Info

Publication number
JPS57138132A
JPS57138132A JP2301681A JP2301681A JPS57138132A JP S57138132 A JPS57138132 A JP S57138132A JP 2301681 A JP2301681 A JP 2301681A JP 2301681 A JP2301681 A JP 2301681A JP S57138132 A JPS57138132 A JP S57138132A
Authority
JP
Japan
Prior art keywords
implantation
condition
ions
junction
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2301681A
Other languages
Japanese (ja)
Inventor
Keiji Oguri
Heiji Moroshima
Hajime Terakado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2301681A priority Critical patent/JPS57138132A/en
Publication of JPS57138132A publication Critical patent/JPS57138132A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Abstract

PURPOSE:To manufacture the device having a desired impurity profile efficiently in a short time by implanting ions having low concentration at two or more of plural times while changing energy in a junction forming process through ion implantation. CONSTITUTION:Two conductive type determined impurities are formed to the main surface of one conductive type substrate through the ion implantation, and the device having a P-N junction is manufactured in the substrate. In the ion implanting process, ions are implanted at times such as twice when the concentration of the surface and concentration near the junction can be brought to desired values through the implantation of a condition such as 100kev, 5X10<15>cm<-2>. Primary implantation is executed at a condition such as 150kev, 7X10<13>cm<-2>, and secondary implantation is executed under the condition of 40kev, 6X10<13>cm<-2>. Accordingly, since the profile equal to the case when ions are implanted once can be formed, th process can be completed in a short time even when using a low current implanting device, and the efficiency of the device can be improved.
JP2301681A 1981-02-20 1981-02-20 Manufacture of semiconductor device through ion implantation Pending JPS57138132A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2301681A JPS57138132A (en) 1981-02-20 1981-02-20 Manufacture of semiconductor device through ion implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2301681A JPS57138132A (en) 1981-02-20 1981-02-20 Manufacture of semiconductor device through ion implantation

Publications (1)

Publication Number Publication Date
JPS57138132A true JPS57138132A (en) 1982-08-26

Family

ID=12098688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2301681A Pending JPS57138132A (en) 1981-02-20 1981-02-20 Manufacture of semiconductor device through ion implantation

Country Status (1)

Country Link
JP (1) JPS57138132A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200416A (en) * 1983-04-28 1984-11-13 Toshiba Corp Manufacture of semiconductor device
JPH02263435A (en) * 1988-10-31 1990-10-26 Sharp Corp Ion implanting method and apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200416A (en) * 1983-04-28 1984-11-13 Toshiba Corp Manufacture of semiconductor device
JPH02263435A (en) * 1988-10-31 1990-10-26 Sharp Corp Ion implanting method and apparatus

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