PT103998A - Utilização de material celulósico simultaneamente como suporte físico e dieléctrico em dispositivos electrónicos e optoelectrónicos auto sustentáveis de efeito de campo. - Google Patents

Utilização de material celulósico simultaneamente como suporte físico e dieléctrico em dispositivos electrónicos e optoelectrónicos auto sustentáveis de efeito de campo. Download PDF

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Publication number
PT103998A
PT103998A PT103998A PT10399808A PT103998A PT 103998 A PT103998 A PT 103998A PT 103998 A PT103998 A PT 103998A PT 10399808 A PT10399808 A PT 10399808A PT 103998 A PT103998 A PT 103998A
Authority
PT
Portugal
Prior art keywords
electronic
physical
cellulosic material
utilization
dielectric support
Prior art date
Application number
PT103998A
Other languages
English (en)
Other versions
PT103998B (pt
Inventor
Rodrigo Ferrao De Paiv Martins
Elvira Maria Correia Fortunato
Original Assignee
Univ Nova De Lisboa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nova De Lisboa filed Critical Univ Nova De Lisboa
Priority to PT103998A priority Critical patent/PT103998B/pt
Priority to AU2009239685A priority patent/AU2009239685B2/en
Priority to EP09734350A priority patent/EP2272114A1/en
Priority to PCT/IB2009/000565 priority patent/WO2009130551A1/pt
Priority to BRPI0908989-6A priority patent/BRPI0908989A2/pt
Priority to CA2718919A priority patent/CA2718919C/en
Priority to MX2010010225A priority patent/MX2010010225A/es
Priority to KR1020107021040A priority patent/KR101553089B1/ko
Priority to US12/933,661 priority patent/US20110024842A1/en
Priority to RU2010142240/28A priority patent/RU2495516C2/ru
Priority to JP2011500308A priority patent/JP5734177B2/ja
Priority to CN2009801099257A priority patent/CN102047461A/zh
Publication of PT103998A publication Critical patent/PT103998A/pt
Publication of PT103998B publication Critical patent/PT103998B/pt

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A PRESENTE INVENÇÃO CONSISTE NA UTILIZAÇÃO DE MATERIAL CELULÓSICO E CORRESPONDENTE PROCESSO DE PRODUÇÃO PARA SER UTILIZADO SIMULTANEAMENTE COMO SUPORTE FÍSICO E DIELÉCTRICO EM DISPOSITIVOS ELECTRÓNICOS OU OPTO ELECTRÓNICOS DE EFEITO DE CAMPO DESIGNADO DE DISPOSITIVOS ELECTRÓNICOS DE ESTRUTURA C-MOS INTERSTRATE CARACTERIZADO POR PERMITIR A PRODUÇÃO DE DISPOSITIVOS AUTO SUSTENTADOS FLEXÍVEIS E DESCARTÁVEIS E INTEGRADOS DO TIPO MONOLÍTICO OU HÍBRIDOS.
PT103998A 2008-03-20 2008-03-20 Dispositivos electrónicos e optoelectrónicos de efeito de campo compreendendo camadas de fibras naturais, sintéticas ou mistas e respectivo processo de fabrico PT103998B (pt)

Priority Applications (12)

Application Number Priority Date Filing Date Title
PT103998A PT103998B (pt) 2008-03-20 2008-03-20 Dispositivos electrónicos e optoelectrónicos de efeito de campo compreendendo camadas de fibras naturais, sintéticas ou mistas e respectivo processo de fabrico
AU2009239685A AU2009239685B2 (en) 2008-03-20 2009-03-20 Procedure for the use of natural cellulosic material, synthetic material or mixed natural and synthetic material, simultaneously as physical and dielectric support in self-sustainable field effect electronic and optoelectronic devices
EP09734350A EP2272114A1 (en) 2008-03-20 2009-03-20 Procedure for the use of natural cellulosic material, synthetic material or mixed natural and synthetic material, simultaneously as physical and dielectric support in self-sustainable field effect electronic and optoelectronic devices
PCT/IB2009/000565 WO2009130551A1 (pt) 2008-03-20 2009-03-20 Processo de utilização de material natural celulósico, sintético ou misto, simultaneamente como suporte físico e dieléctrico em dispositivos electrónicos e opto electrónicos auto sustentáveis de efeito de campo
BRPI0908989-6A BRPI0908989A2 (pt) 2008-03-20 2009-03-20 Processo de utilização de material natural celulósico, sintético ou misto, simultaneamente como suporte físico e dielétrico em dispositivos eletrônicos e optoeletrônicos autossustentáveis de efeito de campo
CA2718919A CA2718919C (en) 2008-03-20 2009-03-20 Field effect electronic and optoelectronic devices with paper-based substrate and process of making thereof
MX2010010225A MX2010010225A (es) 2008-03-20 2009-03-20 Procedimiento para el uso simultaneo de material celulosico natural, material sintetico o material sintetico y natural mezclado, como soporte dielectrico y fisico en dispositivos optoelectronicos y electronicos de efecto de campo autosostenibles.
KR1020107021040A KR101553089B1 (ko) 2008-03-20 2009-03-20 천연 셀룰로스 물질, 인조 물질, 또는 천연인조 혼합물질을 물리적 및 유전체적 지지체로서 자체-지속 전계 효과 전자 소자 및 광전자 소자에 동시적으로 사용하기 위한 프로세스
US12/933,661 US20110024842A1 (en) 2008-03-20 2009-03-20 Procedure for the use of natural cellulosic material, synthetic material or mixed natural and synthetic material, simultaneously as physical and dielectric support in self-sustainable field effect electronic and optoelectronic devices
RU2010142240/28A RU2495516C2 (ru) 2008-03-20 2009-03-20 Способ использования целлюлозного натурального, синтетического или смешанного материала в качестве одновременно несущего и диэлектрического основания в самостоятельных электронных и оптоэлектронных устройствах с полевым эффектом
JP2011500308A JP5734177B2 (ja) 2008-03-20 2009-03-20 電界効果型の電子又は光電子デバイス
CN2009801099257A CN102047461A (zh) 2008-03-20 2009-03-20 使用天然、合成或混合纤维素材料同时作为可自支持场效应电子和光电子器件中的物理和电介质支撑体的工艺

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PT103998A PT103998B (pt) 2008-03-20 2008-03-20 Dispositivos electrónicos e optoelectrónicos de efeito de campo compreendendo camadas de fibras naturais, sintéticas ou mistas e respectivo processo de fabrico

Publications (2)

Publication Number Publication Date
PT103998A true PT103998A (pt) 2009-09-21
PT103998B PT103998B (pt) 2011-03-10

Family

ID=40792978

Family Applications (1)

Application Number Title Priority Date Filing Date
PT103998A PT103998B (pt) 2008-03-20 2008-03-20 Dispositivos electrónicos e optoelectrónicos de efeito de campo compreendendo camadas de fibras naturais, sintéticas ou mistas e respectivo processo de fabrico

Country Status (12)

Country Link
US (1) US20110024842A1 (pt)
EP (1) EP2272114A1 (pt)
JP (1) JP5734177B2 (pt)
KR (1) KR101553089B1 (pt)
CN (1) CN102047461A (pt)
AU (1) AU2009239685B2 (pt)
BR (1) BRPI0908989A2 (pt)
CA (1) CA2718919C (pt)
MX (1) MX2010010225A (pt)
PT (1) PT103998B (pt)
RU (1) RU2495516C2 (pt)
WO (1) WO2009130551A1 (pt)

Cited By (1)

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US8503059B2 (en) 2009-04-01 2013-08-06 Faculdade de Ciências e Tecnologia/Universidade Nova de Lisboa Electrochromic thin film transistors with lateral or vertical structure using functionalized or non-functionalized substrates and method of manufacturing same

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US8769836B2 (en) 2010-06-22 2014-07-08 Nike, Inc. Article of footwear with color change portion and method of changing color
US8474146B2 (en) 2010-06-22 2013-07-02 Nike, Inc. Article of footwear with color change portion and method of changing color
US9301569B2 (en) 2010-06-22 2016-04-05 Nike, Inc. Article of footwear with color change portion and method of changing color
CN105980832B (zh) * 2013-12-10 2019-08-16 伊鲁米那股份有限公司 用于生物或化学分析的生物传感器及其制造方法
US10741477B2 (en) * 2018-03-23 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of forming the same
EP4298873A1 (en) * 2021-02-26 2024-01-03 Liquid Wire LLC Devices, systems, and methods for making and using circuit assemblies having patterns of deformable conductive material formed therein

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Also Published As

Publication number Publication date
AU2009239685B2 (en) 2014-07-17
PT103998B (pt) 2011-03-10
BRPI0908989A2 (pt) 2015-08-04
EP2272114A1 (en) 2011-01-12
JP2011517503A (ja) 2011-06-09
KR101553089B1 (ko) 2015-09-30
CN102047461A (zh) 2011-05-04
WO2009130551A1 (pt) 2009-10-29
RU2495516C2 (ru) 2013-10-10
RU2010142240A (ru) 2012-04-27
KR20110013355A (ko) 2011-02-09
WO2009130551A8 (pt) 2010-12-29
CA2718919C (en) 2017-07-11
CA2718919A1 (en) 2009-10-29
MX2010010225A (es) 2011-03-02
JP5734177B2 (ja) 2015-06-10
AU2009239685A1 (en) 2009-10-29
US20110024842A1 (en) 2011-02-03

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